[go: up one dir, main page]

Follow
Mor M. Dahan
Mor M. Dahan
Ph.D. candidate in Electrical and Computer Engineering, Technion, Israel
Verified email at campus.technion.ac.il
Title
Cited by
Cited by
Year
Sub-Nanosecond Switching of Si:HfO2 Ferroelectric Field-Effect Transistor
MM Dahan, H Mulaosmanovic, O Levit, S Dunkel, S Beyer, E Yalon
Nano Letters 23 (4), 1395-1400, 2023
672023
Reconfigurable low-voltage hexagonal boron nitride nonvolatile switches for millimeter-wave wireless communications
SJ Yang, MM Dahan, O Levit, F Makal, P Peterson, J Alikpala, ...
Nano Letters 23 (4), 1152-1158, 2023
322023
C-AND: Mixed writing scheme for disturb reduction in 1T ferroelectric FET memory
MM Dahan, ET Breyer, S Slesazeck, T Mikolajick, S Kvatinsky
IEEE Transactions on Circuits and Systems I: Regular Papers 69 (4), 1595-1605, 2022
142022
Crystallization dynamics probed by transient resistance in phase change memory cells
E Ordan, RG Nir-Harwood, MM Dahan, Y Keller, E Yalon
Journal of Applied Physics 135 (20), 2024
32024
Ionic–electronic dynamics in an electrochemical gate stack toward high-speed artificial synapses
O Levit, E Ber, MM Dahan, Y Keller, E Yalon
Applied Physics Letters 123 (21), 2023
22023
Reconfigurable Time-Domain In-Memory Computing Marco using CAM FeFET with Multilevel Delay Calibration in 28 nm CMOS
J Mattar, MM Dahan, S Dunkel, H Mulaosmanovic, S Beyer, E Yalon, ...
arXiv preprint arXiv:2504.03925, 2025
12025
Impact of Charge Trapping and Ferroelectric Polarization on the Memory Window in HfOx FeFETs Probed by Dynamic Measurements
G Zilberman, MM Dahan, H Mulaosmanovic, S Dünkel, S Beyer, E Yalon
2025 Device Research Conference (DRC), 1-2, 2025
2025
Novel Ultrafast Non-Destructive Readout of FeRAM by Low-Voltage Transient Current
MM Dahan, E Ber, F Wunderwald, G Zilberman, G Orlev, Y Keller, ...
2025 IEEE International Memory Workshop (IMW), 1-4, 2025
2025
Origin of charges in bulk Si: HfO2 FeFET probed by nanosecond polarization measurements
MM Dahan, H Mulaosmanovic, O Levit, S Dünkel, J Mueller, S Beyer, ...
Microelectronic Engineering 296, 112284, 2025
2025
Exploring Charge Trapping Dynamics in Si: HfO₂-FeFETs by Temperature-Dependent Electrical Characterization
MM Dahan, E Ber, O Levit, H Mulaosmanovic, S Dünkel, J Müller, S Beyer, ...
2024 8th IEEE Electron Devices Technology & Manufacturing Conference (EDTM), 1-3, 2024
2024
Antonelli, Maximiliano
A Aymonino, DC Balderas, L Barboni, M Barezzi, M Bender Machado, ...
The system can't perform the operation now. Try again later.
Articles 1–11