| Device exploration of nanosheet transistors for sub-7-nm technology node D Jang, D Yakimets, G Eneman, P Schuddinck, MG Bardon, P Raghavan, ... IEEE Transactions on Electron Devices 64 (6), 2707-2713, 2017 | 315 | 2017 |
| Pseudo-two-dimensional model for double-gate tunnel FETs considering the junctions depletion regions MG Bardon, HP Neves, R Puers, C Van Hoof IEEE Transactions on electron Devices 57 (4), 827-834, 2010 | 290 | 2010 |
| Vertical GAAFETs for the ultimate CMOS scaling D Yakimets, G Eneman, P Schuddinck, TH Bao, MG Bardon, P Raghavan, ... IEEE Transactions on Electron Devices 62 (5), 1433-1439, 2015 | 244 | 2015 |
| Understanding energy efficiency benefits of carbon nanotube field-effect transistors for digital VLSI G Hills, MG Bardon, G Doornbos, D Yakimets, P Schuddinck, R Baert, ... IEEE Transactions on Nanotechnology 17 (6), 1259-1269, 2018 | 161 | 2018 |
| Power aware FinFET and lateral nanosheet FET targeting for 3nm CMOS technology D Yakimets, MG Bardon, D Jang, P Schuddinck, Y Sherazi, P Weckx, ... 2017 IEEE International Electron Devices Meeting (IEDM), 20.4. 1-20.4. 4, 2017 | 143 | 2017 |
| Future logic scaling: Towards atomic channels and deconstructed chips SB Samavedam, J Ryckaert, E Beyne, K Ronse, N Horiguchi, Z Tokei, ... 2020 IEEE International Electron Devices Meeting (IEDM), 1.1. 1-1.1. 10, 2020 | 123 | 2020 |
| Self-heating on bulk FinFET from 14nm down to 7nm node D Jang, E Bury, R Ritzenthaler, MG Bardon, T Chiarella, K Miyaguchi, ... 2015 IEEE International Electron Devices Meeting (IEDM), 11.6. 1-11.6. 4, 2015 | 117 | 2015 |
| DTCO including sustainability: Power-performance-area-cost-environmental score (PPACE) analysis for logic technologies MG Bardon, P Wuytens, LÅ Ragnarsson, G Mirabelli, D Jang, G Willems, ... 2020 IEEE International Electron Devices Meeting (IEDM), 41.4. 1-41.4. 4, 2020 | 114 | 2020 |
| Extreme scaling enabled by 5 tracks cells: Holistic design-device co-optimization for FinFETs and lateral nanowires MG Bardon, Y Sherazi, P Schuddinck, D Jang, D Yakimets, P Debacker, ... 2016 IEEE International Electron Devices Meeting (IEDM), 28.2. 1-28.2. 4, 2016 | 93 | 2016 |
| Stacked nanosheet fork architecture for SRAM design and device co-optimization toward 3nm P Weckx, J Ryckaert, V Putcha, A De Keersgieter, J Boemmels, ... 2017 IEEE International Electron Devices Meeting (IEDM), 20.5. 1-20.5. 4, 2017 | 78 | 2017 |
| Vertical device architecture for 5nm and beyond: Device & circuit implications AVY Thean, D Yakimets, TH Bao, P Schuddinck, S Sakhare, MG Bardon, ... 2015 Symposium on VLSI Technology (VLSI Technology), T26-T27, 2015 | 66 | 2015 |
| The impact of sequential-3D integration on semiconductor scaling roadmap A Mallik, A Vandooren, L Witters, A Walke, J Franco, Y Sherazi, P Weckx, ... 2017 IEEE International Electron Devices Meeting (IEDM), 32.1. 1-31.1. 4, 2017 | 64 | 2017 |
| Power-performance trade-offs for lateral nanosheets on ultra-scaled standard cells MG Bardon, Y Sherazi, D Jang, D Yakimets, P Schuddinck, R Baert, ... 2018 IEEE Symposium on VLSI Technology, 143-144, 2018 | 60 | 2018 |
| Dimensioning for power and performance under 10nm: the limits of FinFETs scaling M Garcia Bardon, P Schuddinck, P Raghavan, D Jang, D Yakimets, ... ICICDT, 2015 | 54* | 2015 |
| Holisitic device exploration for 7nm node P Raghavan, MG Bardon, D Jang, P Schuddinck, D Yakimets, J Ryckaert, ... 2015 IEEE Custom Integrated Circuits Conference (CICC), 1-5, 2015 | 50 | 2015 |
| Layout-induced stress effects in 14nm & 10nm FinFETs and their impact on performance MG Bardon, V Moroz, G Eneman, P Schuddinck, M Dehan, D Yakimets, ... 2013 Symposium on VLSI Technology, T114-T115, 2013 | 48 | 2013 |
| High-mobility 0.85nm-EOT Si0.45Ge0.55-pFETs: Delivering high performance at scaled VDD J Mitard, L Witters, MG Bardon, P Christie, J Franco, A Mercha, ... 2010 International Electron Devices Meeting, 10.6. 1-10.6. 4, 2010 | 47* | 2010 |
| PPA and scaling potential of backside power options in N2 and A14 nanosheet technology S Yang, P Schuddinck, M Garcia-Bardon, Y Xiang, A Veloso, BT Chan, ... 2023 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and …, 2023 | 41 | 2023 |
| Limitations on lateral nanowire scaling beyond 7-nm node UK Das, MG Bardon, D Jang, G Eneman, P Schuddinck, D Yakimets, ... IEEE Electron Device Letters 38 (1), 9-11, 2016 | 39 | 2016 |
| Low track height standard cell design in iN7 using scaling boosters SMY Sherazi, C Jha, D Rodopoulos, P Debacker, B Chava, L Matti, ... Design-Process-Technology Co-optimization for Manufacturability XI 10148 …, 2017 | 34 | 2017 |
