| The PSA−/lo prostate cancer cell population harbors self-renewing long-term tumor-propagating cells that resist castration J Qin, X Liu, B Laffin, X Chen, G Choy, CR Jeter, T Calhoun-Davis, H Li, ... Cell stem cell 10 (5), 556-569, 2012 | 386 | 2012 |
| High-fidelity spin and optical control of single silicon-vacancy centres in silicon carbide R Nagy, M Niethammer, M Widmann, YC Chen, P Udvarhelyi, C Bonato, ... Nature communications 10 (1), 1954, 2019 | 333 | 2019 |
| Vibrational properties and structure of undoped and Al-doped ZnO films deposited by RF magnetron sputtering M Tzolov, N Tzenov, D Dimova-Malinovska, M Kalitzova, C Pizzuto, ... Thin solid films 379 (1-2), 28-36, 2000 | 302 | 2000 |
| Growth of SiC by “Hot‐Wall” CVD and HTCVD O Kordina, C Hallin, A Henry, JP Bergman, I Ivanov, A Ellison, NT Son, ... physica status solidi (b) 202 (1), 321-334, 1997 | 206 | 1997 |
| Developing silicon carbide for quantum spintronics NT Son, CP Anderson, A Bourassa, KC Miao, C Babin, M Widmann, ... Applied Physics Letters 116 (19), 2020 | 205 | 2020 |
| High temperature chemical vapor deposition of SiC O Kordina, C Hallin, A Ellison, AS Bakin, IG Ivanov, A Henry, R Yakimova, ... Applied physics letters 69 (10), 1456-1458, 1996 | 202 | 1996 |
| Annealing effects on optical properties of low temperature grown ZnO nanorod arrays LL Yang, QX Zhao, M Willander, JH Yang, I Ivanov Journal of Applied Physics 105 (5), 2009 | 184 | 2009 |
| Quantum properties of dichroic silicon vacancies in silicon carbide R Nagy, M Widmann, M Niethammer, DBR Dasari, I Gerhardt, ÖO Soykal, ... Physical Review Applied 9 (3), 034022, 2018 | 181 | 2018 |
| Nitrogen doping concentration as determined by photoluminescence in 4H–and 6H–SiC IG Ivanov, C Hallin, A Henry, O Kordina, E Janzén Journal of applied physics 80 (6), 3504-3508, 1996 | 127 | 1996 |
| Extremely high quantum efficiency of donor-acceptor-pair emission in N-and-B-doped 6H-SiC S Kamiyama, T Maeda, Y Nakamura, M Iwaya, H Amano, I Akasaki, ... Journal of applied physics 99 (9), 2006 | 117 | 2006 |
| Properties of the bound exciton in T Egilsson, JP Bergman, IG Ivanov, A Henry, E Janzén Physical Review B 59 (3), 1956, 1999 | 116 | 1999 |
| Properties of molecular-beam epitaxy-grown GaNAs from optical spectroscopy G Pozina, I Ivanov, B Monemar, JV Thordson, TG Andersson Journal of applied physics 84 (7), 3830-3835, 1998 | 114 | 1998 |
| Reactive magnetron sputter deposition of CNx films on Si (001) substrates: film growth, microstructure and mechanical properties H Sjöström, I Ivanov, M Johansson, L Hultman, JE Sundgren, ... Thin Solid Films 246 (1-2), 103-109, 1994 | 111 | 1994 |
| Electrical charge state manipulation of single silicon vacancies in a silicon carbide quantum optoelectronic device M Widmann, M Niethammer, DY Fedyanin, IA Khramtsov, T Rendler, ... Nano letters 19 (10), 7173-7180, 2019 | 103 | 2019 |
| Correlation between the antisite pair and the center in SiC A Gali, P Deák, E Rauls, NT Son, IG Ivanov, FHC Carlsson, E Janzén, ... Physical Review B 67 (15), 155203, 2003 | 99 | 2003 |
| Growth of thick GaN layers with hydride vapour phase epitaxy B Monemar, H Larsson, C Hemmingsson, IG Ivanov, D Gogova Journal of crystal growth 281 (1), 17-31, 2005 | 96 | 2005 |
| Excitation properties of the divacancy in 4H-SiC B Magnusson, NT Son, A Csóré, A Gällström, T Ohshima, A Gali, ... arXiv preprint arXiv:1804.01167, 2018 | 92 | 2018 |
| Photoluminescence of electron-irradiated T Egilsson, A Henry, IG Ivanov, JL Lindström, E Janzén Physical Review B 59 (12), 8008, 1999 | 87 | 1999 |
| Liquid phase epitaxial growth of SiC M Syväjärvi, R Yakimova, HH Radamson, NT Son, Q Wahab, IG Ivanov, ... Journal of Crystal Growth 197 (1-2), 147-154, 1999 | 87 | 1999 |
| Ionization energies of phosphorus and nitrogen donors and aluminum acceptors in silicon carbide from the donor-acceptor pair emission IG Ivanov, A Henry, E Janzén Physical Review B—Condensed Matter and Materials Physics 71 (24), 241201, 2005 | 86 | 2005 |
