| Theoretical models for the action spectrum and the current-voltage characteristics of microporous semiconductor films in photoelectrochemical cells S Soedergren, A Hagfeldt, J Olsson, SE Lindquist The Journal of Physical Chemistry 98 (21), 5552-5556, 1994 | 913 | 1994 |
| On the thermal stability of atomic layer deposited TiN as gate electrode in MOS devices J Westlinder, T Schram, L Pantisano, E Cartier, A Kerber, GS Lujan, ... IEEE Electron Device Letters 24 (9), 550-552, 2003 | 137 | 2003 |
| Variable work function in MOS capacitors utilizing nitrogen-controlled TiNx gate electrodes J Westlinder, G Sjöblom, J Olsson Microelectronic Engineering 75 (4), 389-396, 2004 | 131 | 2004 |
| Optimizing Ga-profiles for highly efficient Cu (In, Ga) Se2 thin film solar cells in simple and complex defect models C Frisk, C Platzer-Björkman, J Olsson, P Szaniawski, JT Wätjen, ... Journal of Physics D: Applied Physics 47 (48), 485104, 2014 | 121 | 2014 |
| Electrical characterization of AlN MIS and MIM structures F Engelmark, J Westlinder, GF Iriarte, IV Katardjiev, J Olsson IEEE Transactions on Electron Devices 50 (5), 1214-1219, 2003 | 81 | 2003 |
| Combining strong interface recombination with bandgap narrowing and short diffusion length in Cu2ZnSnS4 device modeling C Frisk, T Ericson, SY Li, P Szaniawski, J Olsson, C Platzer-Björkman Solar Energy Materials and Solar Cells 144, 364-370, 2016 | 79 | 2016 |
| Anisotropic dry etching of boron doped single crystal CVD diamond J Enlund, J Isberg, M Karlsson, F Nikolajeff, J Olsson, DJ Twitchen Carbon 43 (9), 1839-1842, 2005 | 76 | 2005 |
| Deposition of HfO2 thin films in HfI4-based processes K Forsgren, A Haårsta, J Aarik, A Aidla, J Westlinder, J Olsson Journal of The Electrochemical Society 149 (10), F139, 2002 | 66 | 2002 |
| 1 W/mm RF power density at 3.2 GHz for a dual-layer RESURF LDMOS transistor J Olsson, N Rorsman, L Vestling, C Fager, J Ankarcrona, H Zirath, ... IEEE Electron Device Letters 23 (4), 206-208, 2002 | 61 | 2002 |
| SB-MOSFETs in UTB-SOI featuring PtSi source/drain with dopant segregation Z Zhang, Z Qiu, PE Hellstrom, G Malm, J Olsson, J Lu, M Ostling, ... IEEE electron device letters 29 (1), 125-127, 2008 | 47 | 2008 |
| Investigation of the thermal stability of reactively sputter-deposited TiN MOS gate electrodes G Sjoblom, J Westlinder, J Olsson IEEE transactions on electron devices 52 (10), 2349-2352, 2005 | 47 | 2005 |
| Simulation and dielectric characterization of reactive dc magnetron cosputtered thin films J Westlinder, Y Zhang, F Engelmark, G Possnert, HO Blom, J Olsson, ... Journal of Vacuum Science & Technology B: Microelectronics and Nanometer …, 2002 | 43 | 2002 |
| A novel strained Si0. 7Ge0. 3 surface-channel pMOSFET with an ALD TiN/Al2O3/HfAlOx/Al2O3 gate stack D Wu, AC Lindgren, S Persson, G Sjöblom, M von Haartman, J Seger, ... IEEE Electron Device Letters 24 (3), 171-173, 2003 | 40 | 2003 |
| A self-aligned lateral bipolar transistor realized on SIMOX-material B Edholm, J Olsson, A Soderbarg IEEE Transactions on electron devices 40 (12), 2359-2360, 2002 | 34 | 2002 |
| Protein sensing beyond the debye length using graphene field-effect transistors M Hinnemo, A Makaraviciute, P Ahlberg, J Olsson, Z Zhang, SL Zhang, ... IEEE Sensors Journal 18 (16), 6497-6503, 2018 | 33 | 2018 |
| Low-resistivity ZrNx metal gate in MOS devices J Westlinder, J Malmström, G Sjöblom, J Olsson Solid-state electronics 49 (8), 1410-1413, 2005 | 33 | 2005 |
| Self-heating effects in SOI bipolar transistors J Olsson Microelectronic engineering 56 (3-4), 339-352, 2001 | 33 | 2001 |
| Drift region optimization of lateral RESURF devices L Vestling, J Olsson, KH Eklund Solid-State Electronics 46 (8), 1177-1184, 2002 | 31 | 2002 |
| An accurate direct extraction technique for the MBVD resonator model J Bjurstrom, L Vestling, J Olsson, I Katardjiev 34th European Microwave Conference, 2004. 3, 1241-1244, 2004 | 30 | 2004 |
| Analysis and design of a low-voltage high-frequency LDMOS transistor L Vestling, J Ankarcrona, J Olsson IEEE Transactions on Electron Devices 49 (6), 976-980, 2002 | 30 | 2002 |