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Stephen Bedell
Stephen Bedell
IBM T.J. Watson Research Center
Verified email at us.ibm.com
Title
Cited by
Cited by
Year
Principle of direct van der Waals epitaxy of single-crystalline films on epitaxial graphene
J Kim, C Bayram, H Park, CW Cheng, C Dimitrakopoulos, JA Ott, ...
Nature communications 5 (1), 4836, 2014
5012014
Method of preventing surface roughening during hydrogen prebake of SiGe substrates
H Chen, DM Mocuta, RJ Murphy, SW Bedell, DK Sadana
US Patent 6,958,286, 2005
3062005
Layer-resolved graphene transfer via engineered strain layers
J Kim, H Park, JB Hannon, SW Bedell, K Fogel, DK Sadana, ...
Science 342 (6160), 833-836, 2013
2932013
Germanium channel MOSFETs: Opportunities and challenges
H Shang, MM Frank, EP Gusev, JO Chu, SW Bedell, KW Guarini, M Ieong
IBM Journal of Research and Development 50 (4.5), 377-386, 2006
2472006
Kerf-less removal of Si, Ge, and III–V layers by controlled spalling to enable low-cost PV technologies
SW Bedell, D Shahrjerdi, B Hekmatshoar, K Fogel, PA Lauro, JA Ott, ...
IEEE Journal of Photovoltaics 2 (2), 141-147, 2012
2462012
CMOS-integrated high-speed MSM germanium waveguide photodetector
S Assefa, F Xia, SW Bedell, Y Zhang, T Topuria, PM Rice, YA Vlasov
Optics Express 18 (5), 4986-4999, 2010
2452010
Extremely flexible nanoscale ultrathin body silicon integrated circuits on plastic
D Shahrjerdi, SW Bedell
Nano letters 13 (1), 315-320, 2013
2422013
Layer transfer by controlled spalling
SW Bedell, K Fogel, P Lauro, D Shahrjerdi, JA Ott, D Sadana
Journal of Physics D: Applied Physics 46 (15), 152002, 2013
1552013
High-efficiency thin-film InGaP/InGaAs/Ge tandem solar cells enabled by controlled spalling technology
D Shahrjerdi, SW Bedell, C Ebert, C Bayram, B Hekmatshoar, K Fogel, ...
Applied physics letters 100 (5), 2012
1432012
A manufacturable dual channel (Si and SiGe) high-k metal gate CMOS technology with multiple oxides for high performance and low power applications
S Krishnan, U Kwon, N Moumen, MW Stoker, ECT Harley, S Bedell, ...
2011 International Electron Devices Meeting, 28.1. 1-28.1. 4, 2011
1312011
Strain scaling for CMOS
SW Bedell, A Khakifirooz, DK Sadana
Mrs Bulletin 39 (2), 131-137, 2014
1262014
Ultralight high-efficiency flexible InGaP/(In) GaAs tandem solar cells on plastic
D Shahrjerdi, SW Bedell, C Bayram, CC Lubguban, K Fogel, P Lauro, ...
Adv. Energy Mater 3 (5), 566-571, 2013
1092013
Sweet-spot operation of a germanium hole spin qubit with highly anisotropic noise sensitivity
GSAF N. W. Hendrickx, L. Massai, M. Mergenthaler, F. J. Schupp, S. Paredes ...
Nature Materials, 2024
922024
Investigation of surface blistering of hydrogen implanted crystals
SW Bedell, WA Lanford
Journal of Applied Physics 90 (3), 1138-1146, 2001
902001
Improved germanium n+/p junction diodes formed by coimplantation of antimony and phosphorus
J Kim, SW Bedell, DK Sadana
Applied Physics Letters 98 (8), 2011
832011
Strain engineering in functional materials
G Tsutsui, S Mochizuki, N Loubet, SW Bedell, DK Sadana
AIP Advances 9 (3), 030701, 2019
732019
Mobility scaling in short-channel length strained Ge-on-insulator P-MOSFETs
SW Bedell, A Majumdar, JA Ott, J Arnold, K Fogel, SJ Koester, DK Sadana
IEEE Electron Device Letters 29 (7), 811-813, 2008
722008
CMOS-integrated 40GHz germanium waveguide photodetector for on-chip optical interconnects
S Assefa, F Xia, SW Bedell, Y Zhang, T Topuria, PM Rice, YA Vlasov
Optical Fiber Communication Conference, OMR4, 2009
692009
Layer transfer of bulk gallium nitride by controlled spalling
SW Bedell, P Lauro, JA Ott, K Fogel, DK Sadana
Journal of Applied Physics 122, 025103, 2017
682017
Ultra-low-power sub-photon-voltage high-efficiency light-emitting diodes
N Li, K Han, W Spratt, S Bedell, J Ott, M Hopstaken, F Libsch, Q Li, ...
Nature Photonics 13 (9), 588-592, 2019
622019
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Articles 1–20