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Oleksandr Oberemok
Oleksandr Oberemok
V.E. Lashkaryov Institute of Semiconductor Physics NAS of Ukraine
Verified email at isp.kiev.ua - Homepage
Title
Cited by
Cited by
Year
Redistribution of Tb and Eu ions in ZnO films grown on different substrates under thermal annealing and its impact on Tb-Eu energy transfer
N Korsunska, L Borkovska, L Khomenkova, T Sabov, O Oberemok, ...
Applied Surface Science 528, 146913, 2020
172020
Stimulated oxygen impurity gettering under ultra-shallow junction formation in silicon
O Oberemok, V Kladko, V Litovchenko, B Romanyuk, V Popov, V Melnik, ...
Semiconductor Science and Technology 29 (5), 055008, 2014
142014
Si-rich Al2O3 films grown by RF magnetron sputtering: structural and photoluminescence properties versus annealing treatment
N Korsunska, L Khomenkova, O Kolomys, V Strelchuk, A Kuchuk, ...
Nanoscale Research Letters 8 (1), 273, 2013
122013
Infrared study of the structure of silicon oxynitride films produced by plasma enhanced chemical vapor deposition
IP Lisovskyy, MV Voitovych, AV Sarikov, SO Zlobin, AN Lukianov, ...
Journal of Non-Crystalline Solids 617, 122502, 2023
112023
The effect of high temperature annealing on the photoluminescence of ZnMgO alloys
L Borkovska, L Khomenkova, I Markevich, M Osipyonok, O Kolomys, ...
physica status solidi (a) 215 (19), 1800250, 2018
112018
Light-induced mass transport in amorphous chalcogenides/gold nanoparticles composites
ML Trunov, PM Lytvyn, PM Nagy, OS Oberemok, MO Durkot, AA Tarnaii, ...
Semiconductor Physics Quantum Electronics & Optoelectronics, 2013
112013
Structural and optical studies of strain relaxation in Ge1− xSnx layers grown on Ge/Si (001) by molecular beam epitaxy
AS Nikolenko, VV Strelchuk, NV Safriuk, SB Kryvyi, VP Kladko, ...
Thin Solid Films 613, 68-74, 2016
102016
AES and XPS characterization of TiN layers formed and modified by ion implantation
V Melnik, V Popov, D Kruger, O Oberemok
Semiconductor Physics Quantum Electronics & Optoelectronics, 1999
81999
Growth of silicon self-assembled nanowires by using gold-enhanced CVD technology
AI Klimovskaya, YY Kalashnyk, AT Voroshchenko, OS Oberemok, ...
Semiconductor physics, quantum electronics & optoelectronics, 282-287, 2018
72018
Ultrasound effect on radiation damages in boron implanted silicon
B Romanjuk, D Krüger, V Melnik, V Popov, Y Olikh, V Soroka, ...
Semiconductor Physics Quantum Electronics & Optoelectronics, 2000
72000
Ho and Nd ion beam modifications of ZnO thin films
O Oberemok, V Kladko, V Melnik, O Dubikovskyi, O Kosulya, ...
Materials Chemistry and Physics 301, 127669, 2023
62023
GD Mateik Technological aspects of thermoelectric PbTe production
IV Gorichok, IM Lishchynsky, SI Mudry, OS Oberemok, TO Semko, ...
Sensor electronics and microsystem technologies 14 (3), 53, 2017
52017
Tekhnolohichni aspekty otrymannia termoelektrychnoho PbTe
IV Horichok, IM Lishchynskyi, SI Mudryi, OS Oberemok, TO Semko, ...
Sensorna elektronika i mikrosystemni tekhnolohii 14 (3), 53-64, 2017
52017
Oxygen ion-beam modification of vanadium oxide films for reaching a high value of the resistance temperature coefficient
TM Sabov, OS Oberemok, OV Dubikovskyi, VP Melnik, VP Kladko, ...
Semiconductor physics, quantum electronics & optoelectronics, 153-158, 2017
52017
Wavefront sensor for the determination of nanostructured surface defects
VV Buchenko, AA Goloborodko, VV Lendel, OS Oberemok
Journal of Nano-and Electronic Physics 7 (3), 3023-1, 2015
52015
Investigation of the Phase Interfaces in Periodic Multilayer Mo/Si Structures, Using the Method of Mass-Spectrometry of Neutral Particles
YP Pershin, VA Sevryukova, EN Zubarev, OS Oberemok, VP Melnik, ...
METALLOFIZIKA I NOVEISHIE TEKHNOLOGII 35 (12), 1617-1627, 2013
52013
Complex Investigations of Crystalline Material for Solar Power Engineering
VG Litovchenko, BM Romanyuk, VG Popov, VP Melnik, OS Oberemok, ...
METALLOFIZIKA I NOVEISHIE TEKHNOLOGII 33 (7), 873-898, 2011
52011
Formation of Si3N4 buried layers in silicon under the action of hydrostatic pressure
V Mel'nik, V Popov, O Oberemok, B Romanyuk, D Gamov, A Myisyuk, ...
52007
Borophosphosilicate glass component analysis using secondary neutral mass spectrometry
PM Lytvyn
Semiconductor Physics, Quantum Electronics and Optoelectronics, 2002
52002
Formation and transient photovoltaic properties of zno/si isotype heterojunctions by magnetron sputtering
V Melnik, B Romanyuk, V Kladko, V Popov, O Gudymenko, O Liubchenko, ...
Nanomaterials and Nanocomposites, Nanostructure Surfaces, and Their …, 2020
42020
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Articles 1–20