| Artificial synapses based on multiterminal memtransistors for neuromorphic application L Wang, W Liao, SL Wong, ZG Yu, S Li, YF Lim, X Feng, WC Tan, ... Advanced Functional Materials 29 (25), 1901106, 2019 | 294 | 2019 |
| A Fully Printed Flexible MoS2 Memristive Artificial Synapse with Femtojoule Switching Energy X Feng, Y Li, L Wang, S Chen, ZG Yu, WC Tan, N Macadam, G Hu, ... Advanced Electronic Materials 5 (12), 1900740, 2019 | 269 | 2019 |
| 2D photovoltaic devices: progress and prospects L Wang, L Huang, WC Tan, X Feng, L Chen, X Huang, KW Ang Small Methods 2 (3), 1700294, 2018 | 205 | 2018 |
| Self-selective multi-terminal memtransistor crossbar array for in-memory computing X Feng, S Li, SL Wong, S Tong, L Chen, P Zhang, L Wang, X Fong, D Chi, ... ACS nano 15 (1), 1764-1774, 2021 | 162 | 2021 |
| Few‐layer black phosphorus carbide field‐effect transistor via carbon doping WC Tan, Y Cai, RJ Ng, L Huang, X Feng, G Zhang, YW Zhang, CA Nijhuis, ... Advanced Materials 29 (24), 1700503, 2017 | 160 | 2017 |
| Impact and Origin of Interface States in MOS Capacitor with Monolayer MoS2 and HfO2 High-k Dielectric P Xia, X Feng, RJ Ng, S Wang, D Chi, C Li, Z He, X Liu, KW Ang Scientific reports 7 (1), 40669, 2017 | 144 | 2017 |
| An Electronic Synapse Based on 2D Ferroelectric CuInP2S6 B Li, S Li, H Wang, L Chen, L Liu, X Feng, Y Li, J Chen, X Gong, KW Ang Advanced Electronic Materials 6 (12), 2000760, 2020 | 111 | 2020 |
| A van der Waals Synaptic Transistor Based on Ferroelectric Hf0.5Zr0.5O2 and 2D Tungsten Disulfide L Chen, L Wang, Y Peng, X Feng, S Sarkar, S Li, B Li, L Liu, K Han, ... Advanced Electronic Materials 6 (6), 2000057, 2020 | 111 | 2020 |
| High mobility anisotropic black phosphorus nanoribbon field‐effect transistor X Feng, X Huang, L Chen, WC Tan, L Wang, KW Ang Advanced Functional Materials 28 (28), 1801524, 2018 | 111 | 2018 |
| 2D photonic memristor beyond graphene: progress and prospects X Feng, X Liu, KW Ang Nanophotonics 9 (7), 1579-1599, 2020 | 89 | 2020 |
| Electron-beam-irradiated rhenium disulfide memristors with low variability for neuromorphic computing S Li, B Li, X Feng, L Chen, Y Li, L Huang, X Fong, KW Ang npj 2D Materials and Applications 5 (1), 1, 2021 | 79 | 2021 |
| Black phosphorus carbide as a tunable anisotropic plasmonic metasurface X Huang, Y Cai, X Feng, WC Tan, DMN Hasan, L Chen, N Chen, L Wang, ... ACS photonics 5 (8), 3116-3123, 2018 | 77 | 2018 |
| CMOS backend-of-line compatible memory array and logic circuitries enabled by high performance atomic layer deposited ZnO thin-film transistor W Wang, K Li, J Lan, M Shen, Z Wang, X Feng, H Yu, K Chen, J Li, F Zhou, ... Nature Communications 14 (1), 6079, 2023 | 62 | 2023 |
| Fabry-Perot cavity enhanced light-matter interactions in two-dimensional van der Waals heterostructure X Huang, X Feng, L Chen, L Wang, WC Tan, L Huang, KW Ang Nano Energy 62, 667-673, 2019 | 51 | 2019 |
| Black phosphorus based field effect transistors with simultaneously achieved near ideal subthreshold swing and high hole mobility at room temperature X Liu, KW Ang, W Yu, J He, X Feng, Q Liu, H Jiang, D Tang, J Wen, Y Lu, ... Scientific reports 6 (1), 24920, 2016 | 47 | 2016 |
| Recent Advances in Black Phosphorus‐Based Electronic Devices WC Tan, L Wang, X Feng, L Chen, L Huang, X Huang, KW Ang Advanced Electronic Materials 5 (2), 1800666, 2019 | 46 | 2019 |
| Anomalously enhanced thermal stability of phosphorene via metal adatom doping: An experimental and first-principles study X Feng, VV Kulish, P Wu, X Liu, KW Ang Nano Research 9 (9), 2687-2695, 2016 | 45 | 2016 |
| Efficient and reliable surface charge transfer doping of black phosphorus via atomic layer deposited MgO toward high performance complementary circuits W Liao, L Wang, L Chen, W Wei, Z Zeng, X Feng, L Huang, WC Tan, ... Nanoscale 10 (36), 17007-17014, 2018 | 40 | 2018 |
| Aerosol Jet Printed WSe2 Crossbar Architecture Device on Kapton With Dual Functionality as Resistive Memory and Photosensor for Flexible System Integration Y Li, X Feng, M Sivan, JF Leong, B Tang, X Wang, JN Tey, J Wei, KW Ang, ... IEEE Sensors Journal 20 (9), 4653-4659, 2020 | 36 | 2020 |
| Gigahertz integrated circuits based on complementary black phosphorus transistors L Chen, S Li, X Feng, L Wang, X Huang, BCK Tee, KW Ang Advanced Electronic Materials 4 (9), 1800274, 2018 | 34 | 2018 |
