| Compact model of dielectric breakdown in spin-transfer torque magnetic tunnel junction Y Wang, H Cai, LA de Barros Naviner, Y Zhang, X Zhao, E Deng, JO Klein, ... IEEE Transactions on Electron Devices 63 (4), 1762-1767, 2016 | 192 | 2016 |
| Compact model of magnetic tunnel junction with stochastic spin transfer torque switching for reliability analyses Y Wang, Y Zhang, EY Deng, JO Klein, LAB Naviner, WS Zhao Microelectronics Reliability 54 (9-10), 1774-1778, 2014 | 142 | 2014 |
| Robust ultra-low power non-volatile logic-in-memory circuits in FD-SOI technology H Cai, Y Wang, LADB Naviner, W Zhao IEEE Transactions on Circuits and Systems I: Regular Papers 64 (4), 847-857, 2016 | 107 | 2016 |
| Compact modeling and analysis of voltage-gated spin-orbit torque magnetic tunnel junction K Zhang, D Zhang, C Wang, L Zeng, Y Wang, W Zhao IEEE Access 8, 50792-50800, 2020 | 100 | 2020 |
| Failure analysis in magnetic tunnel junction nanopillar with interfacial perpendicular magnetic anisotropy W Zhao, X Zhao, B Zhang, K Cao, L Wang, W Kang, Q Shi, M Wang, ... Materials 9 (1), 41, 2016 | 93 | 2016 |
| High performance MRAM with spin-transfer-torque and voltage-controlled magnetic anisotropy effects H Cai, W Kang, Y Wang, LADB Naviner, J Yang, W Zhao Applied Sciences 7 (9), 929, 2017 | 70 | 2017 |
| A novel circuit design of true random number generator using magnetic tunnel junction Y Wang, H Cai, LAB Naviner, JO Klein, J Yang, W Zhao 2016 IEEE/ACM International Symposium on Nanoscale Architectures (NANOARCH …, 2016 | 63 | 2016 |
| Compact thermal modeling of spin transfer torque magnetic tunnel junction Y Wang, H Cai, LAB Naviner, Y Zhang, JO Klein, WS Zhao Microelectronics Reliability 55 (9-10), 1649-1653, 2015 | 49 | 2015 |
| Multiplexing sense-amplifier-based magnetic flip-flop in a 28-nm FDSOI technology H Cai, Y Wang, W Zhao, LA de Barros Naviner IEEE Transactions on Nanotechnology 14 (4), 761-767, 2015 | 39 | 2015 |
| Stochastic computation with spin torque transfer magnetic tunnel junction LA de Barros Naviner, H Cai, Y Wang, W Zhao, AB Dhia 2015 IEEE 13th International New Circuits and Systems Conference (NEWCAS), 1-4, 2015 | 32 | 2015 |
| Robust magnetic full-adder with voltage sensing 2T/2MTJ cell E Deng, Y Wang, Z Wang, JO Klein, B Dieny, G Prenat, W Zhao Proceedings of the 2015 IEEE/ACM International Symposium on Nanoscale …, 2015 | 31 | 2015 |
| A reconfigurable arbiter MPUF with high resistance against machine learning attack R Ali, H Ma, Z Hou, D Zhang, E Deng, Y Wang IEEE Transactions on Magnetics 57 (10), 1-7, 2021 | 27 | 2021 |
| Exploring hybrid STT-MTJ/CMOS energy solution in near-/sub-threshold regime for IoT applications H Cai, Y Wang, LA de Barros Naviner, J Yang, W Zhao IEEE Transactions on magnetics 54 (2), 1-9, 2017 | 27 | 2017 |
| A machine learning attack-resilient strong PUF leveraging the process variation of MRAM R Ali, D Zhang, H Cai, W Zhao, Y Wang IEEE Transactions on Circuits and Systems II: Express Briefs 69 (6), 2712-2716, 2022 | 25 | 2022 |
| A high-reliability and low-power computing-in-memory implementation within STT-MRAM L Zhang, E Deng, H Cai, Y Wang, L Torres, A Todri-Sanial, Y Zhang Microelectronics Journal 81, 69-75, 2018 | 24 | 2018 |
| Magnetic nonvolatile SRAM based on voltage-gated spin-orbit-torque magnetic tunnel junctions C Wang, D Zhang, K Zhang, L Zeng, Y Wang, Z Hou, Y Zhang, W Zhao IEEE Transactions on Electron Devices 67 (5), 1965-1971, 2020 | 22 | 2020 |
| Approximate computing in MOS/spintronic non-volatile full-adder H Cai, Y Wang, LAB Naviner, Z Wang, W Zhao 2016 IEEE/ACM International Symposium on Nanoscale Architectures (NANOARCH …, 2016 | 20 | 2016 |
| Low power magnetic flip-flop optimization with FDSOI technology boost H Cai, Y Wang, LA de Barros Naviner, W Zhao IEEE Transactions on Magnetics 52 (8), 1-7, 2016 | 19 | 2016 |
| Efficient reliability evaluation methodologies for combinational circuits H Cai, K Liu, LA de Barros Naviner, Y Wang, M Slimani, JF Naviner Microelectronics Reliability 64, 19-25, 2016 | 15 | 2016 |
| Breakdown analysis of magnetic flip-flop with 28-nm UTBB FDSOI technology H Cai, Y Wang, LA de Barros Naviner, W Zhao IEEE Transactions on Device and Materials Reliability 16 (3), 376-383, 2016 | 14 | 2016 |
Weisheng ZhaoFert Beijing Institute, Beihang UniversityVerified email at buaa.edu.cn
