| Bandgap energy bowing parameter of strained and relaxed InGaN layers G Orsal, Y El Gmili, N Fressengeas, J Streque, R Djerboub, T Moudakir, ... Optical Materials Express 4 (5), 1030-1041, 2014 | 138 | 2014 |
| Bandgap bowing in BGaN thin films A Ougazzaden, S Gautier, T Moudakir, Z Djebbour, Z Lochner, S Choi, ... Applied Physics Letters 93 (8), 2008 | 77 | 2008 |
| Semibulk InGaN: A novel approach for thick, single phase, epitaxial InGaN layers grown by MOVPE K Pantzas, Y El Gmili, J Dickerson, S Gautier, L Largeau, O Mauguin, ... Journal of crystal growth 370, 57-62, 2013 | 74 | 2013 |
| Distributed Bragg reflectors based on diluted boron-based BAlN alloys for deep ultraviolet optoelectronic applications M Abid, T Moudakir, G Orsal, S Gautier, A En Naciri, Z Djebbour, JH Ryou, ... Applied Physics Letters 100 (5), 2012 | 68 | 2012 |
| Multilayered InGaN/GaN structure vs. single InGaN layer for solar cell applications: A comparative study Y El Gmili, G Orsal, K Pantzas, T Moudakir, S Sundaram, G Patriarche, ... Acta Materialia 61 (17), 6587-6596, 2013 | 64 | 2013 |
| BAlN thin layers for deep UV applications X Li, S Sundaram, YE Gmili, T Moudakir, F Genty, S Bouchoule, ... physica status solidi (a) 212 (4), 745-750, 2015 | 52 | 2015 |
| Deep structural analysis of novel BGaN material layers grown by MOVPE S Gautier, G Patriarche, T Moudakir, M Abid, G Orsal, K Pantzas, ... Journal of crystal growth 315 (1), 288-291, 2011 | 51 | 2011 |
| AlGaN-based MQWs grown on a thick relaxed AlGaN buffer on AlN templates emitting at 285 nm X Li, S Sundaram, P Disseix, G Le Gac, S Bouchoule, G Patriarche, ... Optical Materials Express 5 (2), 380-392, 2015 | 48 | 2015 |
| Solar blind metal-semiconductor-metal ultraviolet photodetectors using quasi-alloy of BGaN/GaN superlattices H Srour, JP Salvestrini, A Ahaitouf, S Gautier, T Moudakir, B Assouar, ... Applied Physics Letters 99 (22), 2011 | 47 | 2011 |
| Structural and optical properties of nanodots, nanowires, and multi-quantum wells of III-nitride grown by MOVPE nano-selective area growth WH Goh, G Patriarche, PL Bonanno, S Gautier, T Moudakir, M Abid, ... Journal of Crystal Growth 315 (1), 160-163, 2011 | 45 | 2011 |
| Growth of GaN by metal organic vapor phase epitaxy on ZnO-buffered c-sapphire substrates A Ougazzaden, DJ Rogers, FH Teherani, T Moudakir, S Gautier, ... Journal of Crystal Growth 310 (5), 944-947, 2008 | 43 | 2008 |
| Dual-purpose BGaN layers on performance of nitride-based high electron mobility transistors V Ravindran, M Boucherit, A Soltani, S Gautier, T Moudakir, J Dickerson, ... Applied Physics Letters 100 (24), 2012 | 38 | 2012 |
| Nanometer-scale, quantitative composition mappings of InGaN layers from a combination of scanning transmission electron microscopy and energy dispersive x-ray spectroscopy K Pantzas, G Patriarche, D Troadec, S Gautier, T Moudakir, S Suresh, ... Nanotechnology 23 (45), 455707, 2012 | 36 | 2012 |
| Electrical and structural characterizations of BGaN thin films grown by metal‐organic vapor‐phase epitaxy T Baghdadli, SOS Hamady, S Gautier, T Moudakir, B Benyoucef, ... physica status solidi c 6 (S2 2), S1029-S1032, 2009 | 36 | 2009 |
| Characteristics of the surface microstructures in thick InGaN layers on GaN YE Gmili, G Orsal, K Pantzas, A Ahaitouf, T Moudakir, S Gautier, ... Optical Materials Express 3 (8), 1111-1118, 2013 | 33 | 2013 |
| Investigation of a relaxation mechanism specific to InGaN for improved MOVPE growth of nitride solar cell materials K Pantzas, G Patriarche, G Orsal, S Gautier, T Moudakir, M Abid, V Gorge, ... physica status solidi (a) 209 (1), 25-28, 2012 | 33 | 2012 |
| Theoretical analysis of the influence of defect parameters on photovoltaic performances of composition graded InGaN solar cells V Gorge, A Migan-Dubois, Z Djebbour, K Pantzas, S Gautier, T Moudakir, ... Materials Science and Engineering: B 178 (2), 142-148, 2013 | 31 | 2013 |
| Control of the mechanical adhesion of III–V materials grown on layered h-BN P Vuong, S Sundaram, A Mballo, G Patriarche, S Leone, F Benkhelifa, ... ACS applied materials & interfaces 12 (49), 55460-55466, 2020 | 30 | 2020 |
| Structural and compositional characterization of MOVPE GaN thin films transferred from sapphire to glass substrates using chemical lift-off and room temperature direct wafer … S Gautier, T Moudakir, G Patriarche, DJ Rogers, VE Sandana, ... Journal of crystal growth 370, 63-67, 2013 | 24 | 2013 |
| Wafer-scale epitaxial lift-off of optoelectronic grade GaN from a GaN substrate using a sacrificial ZnO interlayer A Rajan, DJ Rogers, C Ton-That, L Zhu, MR Phillips, S Sundaram, ... Journal of Physics D: Applied Physics 49 (31), 315105, 2016 | 23 | 2016 |
