| Ultra-high hole mobility exceeding one million in a strained germanium quantum well A Dobbie, M Myronov, RJH Morris, AHA Hassan, MJ Prest, VA Shah, ... Applied Physics Letters 101 (17), 2012 | 118 | 2012 |
| Reverse graded SiGe/Ge/Si buffers for high-composition virtual substrates VA Shah, A Dobbie, M Myronov, DR Leadley Journal of Applied Physics 107 (6), 2010 | 110 | 2010 |
| Reverse graded relaxed buffers for high Ge content SiGe virtual substrates VA Shah, A Dobbie, M Myronov, DJF Fulgoni, LJ Nash, DR Leadley Applied Physics Letters 93 (19), 2008 | 110 | 2008 |
| Modelling the inhomogeneous SiC Schottky interface PM Gammon, A Pérez-Tomás, VA Shah, O Vavasour, E Donchev, ... Journal of Applied Physics 114 (22), 2013 | 107 | 2013 |
| High quality relaxed Ge layers grown directly on a Si (0 0 1) substrate VA Shah, A Dobbie, M Myronov, DR Leadley Solid-State Electronics 62 (1), 189-194, 2011 | 82 | 2011 |
| Characterization and modeling of nn Si∕ SiC heterojunction diodes A Pérez-Tomás, MR Jennings, M Davis, JA Covington, PA Mawby, ... Journal of applied physics 102 (1), 2007 | 74 | 2007 |
| Spin transport in germanium at room temperature C Shen, T Trypiniotis, KY Lee, SN Holmes, R Mansell, M Husain, V Shah, ... Applied Physics Letters 97 (16), 2010 | 65 | 2010 |
| Effect of layer thickness on structural quality of Ge epilayers grown directly on Si (001) VA Shah, A Dobbie, M Myronov, DR Leadley Thin Solid Films 519 (22), 7911-7917, 2011 | 61 | 2011 |
| An extremely high room temperature mobility of two-dimensional holes in a strained Ge quantum well heterostructure grown by reduced pressure chemical vapor deposition M Myronov, C Morrison, J Halpin, S Rhead, C Casteleiro, J Foronda, ... Japanese Journal of Applied Physics 53 (4S), 04EH02, 2014 | 38 | 2014 |
| High doped MBE Si p–n and n–n heterojunction diodes on 4H-SiC A Pérez-Tomás, MR Jennings, M Davis, V Shah, T Grasby, JA Covington, ... Microelectronics Journal 38 (12), 1233-1237, 2007 | 38 | 2007 |
| Analysis of inhomogeneous Ge/SiC heterojunction diodes PM Gammon, A Pérez-Tomás, VA Shah, GJ Roberts, MR Jennings, ... Journal of Applied Physics 106 (9), 2009 | 36 | 2009 |
| High quality strained Ge epilayers on a Si0. 2Ge0. 8/Ge/Si (100) global strain-tuning platform M Myronov, A Dobbie, VA Shah, XC Liu, VH Nguyen, DR Leadley Electrochemical and Solid-State Letters 13 (11), H388, 2010 | 34 | 2010 |
| Strain enhanced electron cooling in a degenerately doped semiconductor MJ Prest, JT Muhonen, M Prunnila, D Gunnarsson, VA Shah, ... Applied Physics Letters 99 (25), 2011 | 27 | 2011 |
| Cryogenic characterization of commercial SiC power MOSFETs H Chen, PM Gammon, VA Shah, CA Fisher, CW Chan, S Jahdi, ... Materials Science Forum 821, 777-780, 2015 | 25 | 2015 |
| Precision plasma etching of Si, Ge, and Ge: P by SF6 with added O2 C Wongwanitwattana, VA Shah, M Myronov, EHC Parker, T Whall, ... Journal of Vacuum Science & Technology A 32 (3), 2014 | 25 | 2014 |
| Strain dependence of electron-phonon energy loss rate in many-valley semiconductors JT Muhonen, MJ Prest, M Prunnila, D Gunnarsson, VA Shah, A Dobbie, ... Applied Physics Letters 98 (18), 2011 | 25 | 2011 |
| Interface characteristics of nn and pn Ge/SiC heterojunction diodes formed by molecular beam epitaxy deposition PM Gammon, A Pérez-Tomás, MR Jennings, VA Shah, SA Boden, ... Journal of Applied Physics 107 (12), 2010 | 25 | 2010 |
| The improvement of atomic layer deposited SiO2/4H-SiC interfaces via a high temperature forming gas anneal AB Renz, OJ Vavasour, PM Gammon, F Li, T Dai, M Antoniou, GWC Baker, ... Materials Science in Semiconductor Processing 122, 105527, 2021 | 24 | 2021 |
| The improvement of Mo/4H-SiC Schottky diodes via a P2O5 surface passivation treatment AB Renz, VA Shah, OJ Vavasour, Y Bonyadi, F Li, T Dai, GWC Baker, ... Journal of Applied Physics 127 (2), 2020 | 23 | 2020 |
| Interfacial engineering of semiconductor–superconductor junctions for high performance micro-coolers D Gunnarsson, JS Richardson-Bullock, MJ Prest, HQ Nguyen, ... Scientific reports 5 (1), 17398, 2015 | 23 | 2015 |
Peter GammonUniversity of WarwickVerified email at warwick.ac.uk
