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Shuoben Hou
Shuoben Hou
Coherent (Järfälla)
Verified email at coherent.com
Title
Cited by
Cited by
Year
Wearable organic optoelectronic sensors for medicine
AK Bansal, S Hou, O Kulyk, EM Bowman, IDW Samuel
Advanced Materials, 2015
2532015
550° C 4H-SiC pin photodiode array with two-layer metallization
S Hou, PE Hellström, CM Zetterling, M Östling
IEEE Electron Device Letters 37 (12), 1594-1596, 2016
402016
A 600° C TTL-based 11-stage ring oscillator in bipolar silicon carbide technology
M Shakir, S Hou, BG Malm, M Östling, CM Zetterling
IEEE Electron Device Letters 39 (10), 1540-1543, 2018
382018
Towards silicon carbide VLSI circuits for extreme environment applications
M Shakir, S Hou, R Hedayati, BG Malm, M Östling, CM Zetterling
Electronics 8 (5), 496, 2019
352019
A silicon carbide 256 pixel UV image sensor array operating at 400° C
S Hou, M Shakir, PE Hellström, BG Malm, CM Zetterling, M Östling
IEEE Journal of the Electron Devices Society 8, 116-121, 2020
182020
A 4H-SiC BJT as a switch for on-chip integrated UV photodiode
S Hou, PE Hellström, CM Zetterling, M Östling
IEEE Electron Device Letters 40 (1), 51-54, 2018
182018
555-timer and comparators operational at 500° C
M Shakir, S Hou, A Metreveli, AU Rashid, HA Mantooth, CM Zetterling
IEEE Transactions on Electron Devices 66 (9), 3734-3739, 2019
162019
Low temperature Ni-Al ohmic contacts to p-type 4H-SiC using semi-salicide processing
M Ekström, SB Hou, H Elahipanah, A Salemi, M Östling, CM Zetterling
Materials Science Forum 924, 389-392, 2018
152018
4H-SiC PIN diode as high temperature multifunction sensor
SB Hou, PE Hellström, CM Zetterling, M Östling
Materials Science Forum 897, 630-633, 2017
142017
High temperature high current gain IC compatible 4H-SiC phototransistor
SB Hou, PE Hellström, CM Zetterling, M Östling
Materials Science Forum 963, 832-836, 2019
122019
Scaling and modeling of high temperature 4H-SiC pin photodiodes
S Hou, PE Hellström, CM Zetterling, M Östling
IEEE Journal of the Electron Devices Society 6, 139-145, 2017
82017
Process control and optimization of 4H-SiC semiconductor devices and circuits
S Hou, M Shakir, PE Hellström, CM Zetterling, M Östling
2019 Electron Devices Technology and Manufacturing Conference (EDTM), 252-254, 2019
52019
Silicon carbide high temperature photodetectors and image sensor
S Hou
KTH Royal Institute of Technology, 2019
42019
Scaling of 4H-SiC pin photodiodes for high temperature applications
S Hou, PE Hellström, CM Zetterling, M Östling
2017 75th Annual Device Research Conference (DRC), 1-2, 2017
42017
A monolithic 500° C D-flip flop realized in bipolar 4H-SiC TTL technology
M Shakir, SB Hou, CM Zetterling
Materials Science Forum 963, 818-822, 2019
32019
An organic optoelectronic muscle contraction sensor for prosthetics
I Samuel, AK Bansal, S Hou, O Kulyk
SPIE Newsroom, Apr, 2015
22015
TDDB and HTGB Study of SiC MOSFET with Excessive Channel Leakage
SB Hou, C Lundgren, W Kaplan, S Reshanov
Key Engineering Materials 1024, 9-13, 2025
2025
Buried Grid Double Junction Barrier Schottky Diode and Method of Making
S Hou, S RESHANOV, A Schöner
US Patent App. 18/303,617, 2024
2024
555-Timer IC Operational at 500° C
M Shakir, S Hou, A Metreveli, MU Rashid, HA Mantooth, CM Zetterling
2019
Organic semiconductors for sensing and therapy
I Samuel, A Bansal, S Hou, O Kulyk, A McNeill, E Bowman, J Ferguson
ABSTRACTS OF PAPERS OF THE AMERICAN CHEMICAL SOCIETY 252, 2016
2016
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