| GaN-on-Si mm-wave RF devices integrated in a 200mm CMOS Compatible 3-Level Cu BEOL B Parvais, A Alian, U Peralagu, R Rodriguez, S Yadav, A Khaled, ... 2020 IEEE International Electron Devices Meeting (IEDM), 8.1. 1-8.1. 4, 2020 | 44 | 2020 |
| Germanium-tin (GeSn) P-channel fin field-effect transistor fabricated on a novel GeSn-on-insulator substrate D Lei, KH Lee, YC Huang, W Wang, S Masudy-Panah, S Yadav, A Kumar, ... IEEE Transactions on Electron Devices 65 (9), 3754-3761, 2018 | 42 | 2018 |
| The first GeSn FinFET on a novel GeSnOI substrate achieving lowest S of 79 mV/decade and record high Gm, int of 807 μS/μm for GeSn P-FETs D Lei, KH Lee, S Bao, W Wang, S Masudy-Panah, S Yadav, A Kumar, ... 2017 Symposium on VLSI Technology, T198-T199, 2017 | 38 | 2017 |
| Substrate RF losses and non-linearities in GaN-on-Si HEMT technology S Yadav, P Cardinael, M Zhao, K Vondkar, A Khaled, R Rodriguez, ... 2020 IEEE International Electron Devices Meeting (IEDM), 8.2. 1-8.2. 4, 2020 | 26 | 2020 |
| SiGe and III-V materials and devices: New HEMT and LED elements in 0.18-micron CMOS process and design EA Fitzgerald, KE Lee, SF Yoon, SJ Chua, CS Tan, GI Ng, X Zhou, ... ECS Transactions 75 (8), 439, 2016 | 24 | 2016 |
| Heteroepitaxial growth of In0. 30Ga0. 70As high-electron mobility transistor on 200 mm silicon substrate using metamorphic graded buffer D Kohen, XS Nguyen, S Yadav, A Kumar, RI Made, C Heidelberger, ... AIP Advances 6 (8), 2016 | 22 | 2016 |
| Back barrier trapping induced resistance dispersion in GaN HEMT: Mechanism, modeling, and solutions H Yu, B Parvais, U Peralagu, RY ElKashlan, R Rodriguez, A Khaled, ... 2022 International Electron Devices Meeting (IEDM), 30.6. 1-30.6. 4, 2022 | 21 | 2022 |
| First monolithic integration of Ge P-FETs and InAs N-FETs on silicon substrate: Sub-120 nm III-V buffer, sub-5 nm ultra-thin body, common raised S/D, and gate stack modules S Yadav, KH Tan, KH Goh, S Subramanian, KL Low, N Chen, B Jia, ... 2015 IEEE International Electron Devices Meeting (IEDM), 2.3. 1-2.3. 4, 2015 | 20 | 2015 |
| III-V/III-N technologies for next generation high-capacity wireless communication N Collaert, A Alian, A Banerjee, G Boccardi, P Cardinael, V Chauhan, ... 2022 International Electron Devices Meeting (IEDM), 11.5. 1-11.5. 4, 2022 | 19 | 2022 |
| ESD HBM discharge model in RF GaN-on-Si (MIS) HEMTs WM Wu, SH Chen, A Sibaja-Hernandez, S Yadav, U Peralagu, H Yu, ... 2021 IEEE International Electron Devices Meeting (IEDM), 39.5. 1-39.5. 4, 2021 | 16 | 2021 |
| Gate-All-Around In0.53Ga0.47As Junctionless Nanowire FET With Tapered Source/Drain Structure KH Goh, S Yadav, KL Low, G Liang, X Gong, YC Yeo IEEE Transactions on Electron Devices 63 (3), 1027-1033, 2016 | 16 | 2016 |
| mm-Wave GaN-on-Si HEMTs with a PSAT of 3.9W/mm at 28GHz R ElKashlan, A Khaled, S Yadav, H Yu, U Peralagu, AR Alian, N Collaert, ... 2023 IEEE/MTT-S International Microwave Symposium-IMS 2023, 24-27, 2023 | 14 | 2023 |
| Thermal modelling of GaN & InP RF devices with intrinsic account for nanoscale transport effects B Vermeersch, R Rodriguez, A Sibaja-Hernandez, A Vais, S Yadav, ... 2022 International Electron Devices Meeting (IEDM), 15.3. 1-15.3. 4, 2022 | 14 | 2022 |
| A 120–140-GHz LNA in 250-nm InP HBT V Chauhan, N Collaert, P Wambacq IEEE Microwave and Wireless Components Letters 32 (11), 1315-1318, 2022 | 13 | 2022 |
| Monolithic Integration of InAs Quantum-Well n-MOSFETs and Ultrathin Body Ge p-MOSFETs on a Si Substrate S Yadav, KH Tan, A Kumar, KH Goh, G Liang, SF Yoon, X Gong, YC Yeo IEEE Transactions on Electron Devices 64 (2), 353-360, 2017 | 13 | 2017 |
| Gate-all-around CMOS (InAs n-FET and GaSb p-FET) based on vertically-stacked nanowires on a Si platform, enabled by extremely-thin buffer layer technology and common gate stack … KH Goh, KH Tan, S Yadav, SF Yoon, G Liang, X Gong, YC Yeo 2015 IEEE International Electron Devices Meeting (IEDM), 15.4. 1-15.4. 4, 2015 | 13 | 2015 |
| High Performance mm Wave AlN/GaN MISHEMTs on 200 mm Si Substrate S Yadav, A Alian, R ElKashlan, BJ O’Sullivan, A Khaled, B Kazemi, ... 2023 International Electron Devices Meeting (IEDM), 1-4, 2023 | 12 | 2023 |
| Impact of channel thickness scaling on the performance of GaN-on-Si RF HEMTs on highly C-doped GaN buffer A Alian, R Rodriguez, S Yadav, U Peralagu, AS Hernandez, V Putcha, ... ESSDERC 2022-IEEE 52nd European Solid-State Device Research Conference …, 2022 | 12 | 2022 |
| Monolithic integration of nano-ridge engineered InGaP/GaAs HBTs on 300 mm Si substrate Y Mols, A Vais, S Yadav, L Witters, K Vondkar, R Alcotte, M Baryshnikova, ... Materials 14 (19), 5682, 2021 | 12 | 2021 |
| Analysis of gate-metal resistance in CMOS-compatible RF GaN HEMTs RY ElKashlan, R Rodriguez, S Yadav, A Khaled, U Peralagu, A Alian, ... IEEE Transactions on Electron Devices 67 (11), 4592-4596, 2020 | 12 | 2020 |
Bertrand Parvaisimec & VUBVerified email at imec.be
