| A reliable approach to charge-pumping measurements in MOS transistors G Groeseneken, HE Maes, N Beltran, RF De Keersmaecker IEEE Transactions on Electron Devices 31 (1), 42-53, 1984 | 1600 | 1984 |
| New insights in the relation between electron trap generation and the statistical properties of oxide breakdown R Degraeve, G Groeseneken, R Bellens, JL Ogier, M Depas, PJ Roussel, ... IEEE Transactions on Electron Devices 45 (4), 904-911, 2002 | 788 | 2002 |
| Direct and indirect band-to-band tunneling in germanium-based TFETs KH Kao, AS Verhulst, WG Vandenberghe, B Soree, G Groeseneken, ... IEEE Transactions on Electron Devices 59 (2), 292-301, 2011 | 531 | 2011 |
| Analysis of the charge pumping technique and its application for the evaluation of MOSFET degradation P Heremans, J Witters, G Groeseneken, HE Maes IEEE transactions on Electron Devices 36 (7), 1318-1335, 2002 | 525 | 2002 |
| Tunnel field-effect transistor without gate-drain overlap AS Verhulst, WG Vandenberghe, K Maex, G Groeseneken Applied Physics Letters 91 (5), 2007 | 509 | 2007 |
| Consistent model for the hot-carrier degradation in n-channel and p-channel MOSFETs P Heremans, R Bellens, G Groeseneken, HE Maes IEEE Transactions on Electron Devices 35 (12), 2194-2209, 2002 | 504 | 2002 |
| A consistent model for the thickness dependence of intrinsic breakdown in ultra-thin oxides R Degraeve, G Groeseneken, R Bellens, M Depas, HE Maes Proceedings of International Electron Devices Meeting, 863-866, 1995 | 494 | 1995 |
| Origin of the threshold voltage instability in SiO2/HfO2 dual layer gate dielectrics A Kerber, E Cartier, L Pantisano, R Degraeve, T Kauerauf, Y Kim, A Hou, ... IEEE Electron Device Letters 24 (2), 87-89, 2003 | 467 | 2003 |
| On the correct extraction of interface trap density of MOS devices with high-mobility semiconductor substrates K Martens, CO Chui, G Brammertz, B De Jaeger, D Kuzum, M Meuris, ... IEEE Transactions on Electron Devices 55 (2), 547-556, 2008 | 463 | 2008 |
| Origin of NBTI variability in deeply scaled pFETs B Kaczer, T Grasser, PJ Roussel, J Franco, R Degraeve, LA Ragnarsson, ... 2010 IEEE International Reliability Physics Symposium, 26-32, 2010 | 401 | 2010 |
| Electrical properties of high-κ gate dielectrics: Challenges, current issues, and possible solutions M Houssa, L Pantisano, LÅ Ragnarsson, R Degraeve, T Schram, ... Materials Science and Engineering: R: Reports 51 (4-6), 37-85, 2006 | 352 | 2006 |
| Ubiquitous relaxation in BTI stressing—New evaluation and insights B Kaczer, T Grasser, J Roussel, J Martin-Martinez, R O'Connor, ... 2008 IEEE International Reliability Physics Symposium, 20-27, 2008 | 324 | 2008 |
| Endurance/Retention Trade-off onCap 1T1R Bipolar RRAM YY Chen, L Goux, S Clima, B Govoreanu, R Degraeve, GS Kar, A Fantini, ... IEEE Transactions on electron devices 60 (3), 1114-1121, 2013 | 320 | 2013 |
| Modeling the single-gate, double-gate, and gate-all-around tunnel field-effect transistor AS Verhulst, B Sorée, D Leonelli, WG Vandenberghe, G Groeseneken Journal of Applied Physics 107 (2), 2010 | 295 | 2010 |
| Impact of MOSFET gate oxide breakdown on digital circuit operation and reliability B Kaczer, R Degraeve, M Rasras, K Van de Mieroop, PJ Roussel, ... IEEE Transactions on Electron Devices 49 (3), 500-506, 2002 | 246 | 2002 |
| Balancing SET/RESET Pulse forEndurance in1T1R Bipolar RRAM YY Chen, B Govoreanu, L Goux, R Degraeve, A Fantini, GS Kar, ... IEEE Transactions on Electron devices 59 (12), 3243-3249, 2012 | 237 | 2012 |
| Forward bias gate breakdown mechanism in enhancement-mode p-GaN gate AlGaN/GaN high-electron mobility transistors TL Wu, D Marcon, S You, N Posthuma, B Bakeroot, S Stoffels, ... IEEE Electron device letters 36 (10), 1001-1003, 2015 | 235 | 2015 |
| Degradation and breakdown in thin oxide layers: mechanisms, models and reliability prediction R Degraeve, B Kaczer, G Groeseneken Microelectronics Reliability 39 (10), 1445-1460, 1999 | 235 | 1999 |
| Disorder-controlled-kinetics model for negative bias temperature instability and its experimental verification B Kaczer, V Arkhipov, R Degraeve, N Collaert, G Groeseneken, ... 2005 IEEE International Reliability Physics Symposium, 2005. Proceedings …, 2005 | 233 | 2005 |
| Complementary silicon-based heterostructure tunnel-FETs with high tunnel rates AS Verhulst, WG Vandenberghe, K Maex, S De Gendt, MM Heyns, ... IEEE electron device letters 29 (12), 1398-1401, 2008 | 232 | 2008 |
