| Spin-transfer torque devices for logic and memory: Prospects and perspectives X Fong, Y Kim, K Yogendra, D Fan, A Sengupta, A Raghunathan, K Roy IEEE Transactions on Computer-Aided Design of Integrated Circuits and …, 2015 | 261 | 2015 |
| Magnetic tunnel junction mimics stochastic cortical spiking neurons A Sengupta, P Panda, P Wijesinghe, Y Kim, K Roy Scientific reports 6 (1), 30039, 2016 | 247 | 2016 |
| Spin-transfer torque memories: Devices, circuits, and systems X Fong, Y Kim, R Venkatesan, SH Choday, A Raghunathan, K Roy Proceedings of the IEEE 104 (7), 1449-1488, 2016 | 234 | 2016 |
| Multilevel spin-orbit torque MRAMs Y Kim, X Fong, KW Kwon, MC Chen, K Roy IEEE Transactions on Electron Devices 62 (2), 561-568, 2014 | 147 | 2014 |
| Failure Mitigation Techniques for 1T-1MTJ Spin-Transfer Torque MRAM Bit-cells X Fong, Y Kim, SH Choday, K Roy Very Large Scale Integration (VLSI) Systems, IEEE Transactions on 22 (2 …, 2014 | 104 | 2014 |
| Spin orbit torque based electronic neuron A Sengupta, SH Choday, Y Kim, K Roy Applied Physics Letters 106 (14), 2015 | 102 | 2015 |
| Write-optimized reliable design of STT MRAM Y Kim, SK Gupta, SP Park, G Panagopoulos, K Roy Proceedings of the 2012 ACM/IEEE international symposium on Low power …, 2012 | 97 | 2012 |
| DSH-MRAM: Differential Spin Hall MRAM for On-Chip Memories Y Kim, SH Choday, K Roy Electron Device Letters, IEEE 34 (10), 1259-1261, 2013 | 83 | 2013 |
| SHE-NVFF: Spin Hall effect-based nonvolatile flip-flop for power gating architecture KW Kwon, SH Choday, Y Kim, X Fong, SP Park, K Roy IEEE Electron Device Letters 35 (4), 488-490, 2014 | 72 | 2014 |
| Spin-orbit-torque-based spin-dice: A true random-number generator Y Kim, X Fong, K Roy IEEE Magnetics Letters 6, 1-4, 2015 | 61 | 2015 |
| AWARE (asymmetric write architecture with redundant blocks): A high write speed STT-MRAM cache architecture KW Kwon, SH Choday, Y Kim, K Roy IEEE Transactions on Very Large Scale Integration (VLSI) Systems 22 (4), 712-720, 2013 | 51 | 2013 |
| Spin orbit torque based electronic neuron A Sengupta, SH Choday, K Roy US Patent App. 15/445,906, 2017 | 40 | 2017 |
| Exploring spin transfer torque devices for unconventional computing K Roy, D Fan, X Fong, Y Kim, M Sharad, S Paul, S Chatterjee, S Bhunia, ... IEEE journal on Emerging and Selected Topics in Circuits and Systems 5 (1), 5-16, 2015 | 33 | 2015 |
| Energy-efficient high bandwidth 6T SRAM design on Intel 4 CMOS technology Y Kim, C Ong, AM Pillai, H Jagadeesh, G Baek, I Rajwani, Z Guo, E Karl IEEE Journal of Solid-State Circuits 58 (4), 1087-1093, 2022 | 19 | 2022 |
| Domino-style spin–orbit torque-based spin logic MC Chen, Y Kim, K Yogendra, K Roy IEEE Magnetics Letters 6, 1-4, 2015 | 11 | 2015 |
| 10-nm SRAM Design Using Gate-Modulated Self-Collapse Write-Assist Enabling 175-mV VMIN Reduction With Negligible Active Power Overhead Z Guo, J Wiedemer, Y Kim, PS Ramamoorthy, PB Sathyaprasad, ... IEEE Solid-State Circuits Letters 4, 6-9, 2020 | 10 | 2020 |
| A physics-based statistical model for reliability of STT-MRAM considering oxide variability CH Ho, GD Panagopoulos, SY Kim, Y Kim, D Lee, K Roy 2013 International Conference on Simulation of Semiconductor Processes and …, 2013 | 10 | 2013 |
| A physical model to predict STT-MRAM performance degradation induced by TDDB CH Ho, GD Panagopoulos, SY Kim, Y Kim, D Lee, K Roy 71st Device Research Conference, 59-60, 2013 | 9 | 2013 |
| 29.2 A High-Density SRAM in Intel-18A-RibbonFET Technology with PowerVia-Backside Power Delivery X Wang, Y Kim, GH Baek, KG Bannore, K Dave, A Joushaghani, N Kang, ... 2025 IEEE International Solid-State Circuits Conference (ISSCC) 68, 494-496, 2025 | 6 | 2025 |
| Correction: Corrigendum: Magnetic Tunnel Junction Mimics Stochastic Cortical Spiking Neurons A Sengupta, P Panda, P Wijesinghe, Y Kim, K Roy Scientific reports 7, 46894, 2017 | 4* | 2017 |
Kaushik RoyProfessor of Electrical and Computer Engineering, Purdue UniversityVerified email at purdue.edu
