| The 2020 UV emitter roadmap H Amano, R Collazo, C De Santi, S Einfeldt, M Funato, J Glaab, ... Journal of Physics D: Applied Physics 53 (50), 503001, 2020 | 577 | 2020 |
| Bound excitons in ZnO: Structural defect complexes versus shallow impurity centers MR Wagner, G Callsen, JS Reparaz, JH Schulze, R Kirste, M Cobet, ... Physical Review B—Condensed Matter and Materials Physics 84 (3), 035313, 2011 | 259 | 2011 |
| On the origin of the 265 nm absorption band in AlN bulk crystals R Collazo, J Xie, BE Gaddy, Z Bryan, R Kirste, M Hoffmann, R Dalmau, ... Applied Physics Letters 100 (19), 2012 | 205 | 2012 |
| Polarity control in group-III nitrides beyond pragmatism S Mohn, N Stolyarchuk, T Markurt, R Kirste, MP Hoffmann, R Collazo, ... Physical Review Applied 5 (5), 054004, 2016 | 147 | 2016 |
| Lasing and longitudinal cavity modes in photo-pumped deep ultraviolet AlGaN heterostructures J Xie, S Mita, Z Bryan, W Guo, L Hussey, B Moody, R Schlesser, R Kirste, ... Applied Physics Letters 102 (17), 2013 | 134 | 2013 |
| KOH based selective wet chemical etching of AlN, AlxGa1− xN, and GaN crystals: A way towards substrate removal in deep ultraviolet-light emitting diode W Guo, R Kirste, I Bryan, Z Bryan, L Hussey, P Reddy, J Tweedie, ... Applied Physics Letters 106 (8), 2015 | 113 | 2015 |
| Vacancy compensation and related donor-acceptor pair recombination in bulk AlN BE Gaddy, Z Bryan, I Bryan, R Kirste, J Xie, R Dalmau, B Moody, ... Applied Physics Letters 103 (16), 2013 | 111 | 2013 |
| Atomically Thin MoS2 Narrowband and Broadband Light Superabsorbers L Huang, G Li, A Gurarslan, Y Yu, R Kirste, W Guo, J Zhao, R Collazo, ... ACS nano 10 (8), 7493-7499, 2016 | 108 | 2016 |
| Electronic biosensors based on III-nitride semiconductors R Kirste, N Rohrbaugh, I Bryan, Z Bryan, R Collazo, A Ivanisevic Annual Review of Analytical Chemistry 8 (1), 149-169, 2015 | 101 | 2015 |
| Lithium related deep and shallow acceptors in Li-doped ZnO nanocrystals C Rauch, W Gehlhoff, MR Wagner, E Malguth, G Callsen, R Kirste, ... Journal of Applied Physics 107 (2), 2010 | 100 | 2010 |
| Correlation between mobility collapse and carbon impurities in Si-doped GaN grown by low pressure metalorganic chemical vapor deposition F Kaess, S Mita, J Xie, P Reddy, A Klump, LH Hernandez-Balderrama, ... Journal of Applied Physics 120 (10), 2016 | 99 | 2016 |
| The role of the carbon-silicon complex in eliminating deep ultraviolet absorption in AlN BE Gaddy, Z Bryan, I Bryan, J Xie, R Dalmau, B Moody, Y Kumagai, ... Applied Physics Letters 104 (20), 2014 | 96 | 2014 |
| Thermal conductivity of single-crystalline AlN R Rounds, B Sarkar, A Klump, C Hartmann, T Nagashima, R Kirste, ... Applied Physics Express 11 (7), 071001, 2018 | 90 | 2018 |
| Point defect reduction in MOCVD (Al) GaN by chemical potential control and a comprehensive model of C incorporation in GaN P Reddy, S Washiyama, F Kaess, R Kirste, S Mita, R Collazo, Z Sitar Journal of Applied Physics 122 (24), 2017 | 88 | 2017 |
| Polarity control and growth of lateral polarity structures in AlN R Kirste, S Mita, L Hussey, MP Hoffmann, W Guo, I Bryan, Z Bryan, ... Applied Physics Letters 102 (18), 2013 | 86 | 2013 |
| Phonon deformation potentials in wurtzite GaN and ZnO determined by uniaxial pressure dependent Raman measurements G Callsen, JS Reparaz, MR Wagner, R Kirste, C Nenstiel, A Hoffmann, ... Applied Physics Letters 98 (6), 2011 | 83 | 2011 |
| Charge neutrality levels, barrier heights, and band offsets at polar AlGaN P Reddy, I Bryan, Z Bryan, J Tweedie, S Washiyama, R Kirste, S Mita, ... Applied Physics Letters 107 (9), 2015 | 78 | 2015 |
| Optical signature of Mg-doped GaN: Transfer processes G Callsen, MR Wagner, T Kure, JS Reparaz, M Bügler, J Brunnmeier, ... Physical Review B—Condensed Matter and Materials Physics 86 (7), 075207, 2012 | 77 | 2012 |
| Influence of substrate surface polarity on homoepitaxial growth of ZnO layers by chemical vapor deposition MR Wagner, TP Bartel, R Kirste, A Hoffmann, J Sann, S Lautenschläger, ... Physical Review B—Condensed Matter and Materials Physics 79 (3), 035307, 2009 | 77 | 2009 |
| Point defect reduction in wide bandgap semiconductors by defect quasi Fermi level control P Reddy, MP Hoffmann, F Kaess, Z Bryan, I Bryan, M Bobea, A Klump, ... Journal of Applied Physics 120 (18), 2016 | 76 | 2016 |
Zlatko SitarKobe Steel Distinguished Professor of Materials Science and Engineerign, North Carolina StateVerified email at ncsu.edu
