| Lattice parameters and anisotropic thermal expansion of hexagonal boron nitride in the 10–297.5 K temperature range W Paszkowicz, JB Pelka, M Knapp, T Szyszko, S Podsiadlo Applied Physics A 75 (3), 431-435, 2002 | 405 | 2002 |
| Extremely low temperature growth of ZnO by atomic layer deposition E Guziewicz, IA Kowalik, M Godlewski, K Kopalko, V Osinniy, A Wójcik, ... Journal of Applied Physics 103 (3), 2008 | 311 | 2008 |
| Genetic algorithms, a nature-inspired tool: survey of applications in materials science and related fields W Paszkowicz Materials and Manufacturing Processes 24 (2), 174-197, 2009 | 200 | 2009 |
| Rietveld-refinement study of aluminium and gallium nitrides W Paszkowicz, S Podsiadło, R Minikayev Journal of alloys and compounds 382 (1-2), 100-106, 2004 | 176 | 2004 |
| ZnO grown by atomic layer deposition: A material for transparent electronics and organic heterojunctions E Guziewicz, M Godlewski, T Krajewski, Ł Wachnicki, A Szczepanik, ... Journal of Applied Physics 105 (12), 2009 | 156 | 2009 |
| XPS and XRD study of crystalline 3C-SiC grown by sublimation method RJ Iwanowski, K Fronc, W Paszkowicz, M Heinonen Journal of alloys and compounds 286 (1-2), 143-147, 1999 | 151 | 1999 |
| Raman scattering in α-In2Se3 crystals R Lewandowska, R Bacewicz, J Filipowicz, W Paszkowicz Materials research bulletin 36 (15), 2577-2583, 2001 | 139 | 2001 |
| Magnetic properties of La 0.67 Sr 0.33 MnO 3/YBa 2 Cu 3 O 7 superlattices P Przyslupski, I Komissarov, W Paszkowicz, P Dluzewski, R Minikayev, ... Physical Review B 69 (13), 134428, 2004 | 126 | 2004 |
| Rietveld refinement for indium nitride in the 105–295 K range W Paszkowicz, R Černý, S Krukowski Powder Diffraction 18 (2), 114-121, 2003 | 114 | 2003 |
| Controlling of preferential growth mode of ZnO thin films grown by atomic layer deposition A Wójcik, M Godlewski, E Guziewicz, R Minikayev, W Paszkowicz Journal of Crystal Growth 310 (2), 284-289, 2008 | 112 | 2008 |
| X-ray powder diffraction data for indium nitride W Paszkowicz Powder Diffraction 14 (4), 258-260, 1999 | 101 | 1999 |
| Genetic algorithms, a nature-inspired tool: a survey of applications in materials science and related fields: part II W Paszkowicz Materials and Manufacturing Processes 28 (7), 708-725, 2013 | 97 | 2013 |
| Complementary microstructural and chemical analyses of Sepia officinalis endoskeleton M Florek, E Fornal, P Gómez-Romero, E Zieba, W Paszkowicz, J Lekki, ... Materials Science and Engineering: C 29 (4), 1220-1226, 2009 | 96 | 2009 |
| Rietveld refinement for CuInSe2 and CuIn3Se5 W Paszkowicz, R Lewandowska, R Bacewicz Journal of alloys and compounds 362 (1-2), 241-247, 2004 | 79 | 2004 |
| Transparent and conductive undoped zinc oxide thin films grown by atomic layer deposition G Luka, T Krajewski, L Wachnicki, B Witkowski, E Lusakowska, ... physica status solidi (a) 207 (7), 1568-1571, 2010 | 77 | 2010 |
| Photoluminescence, electrical and structural properties of ZnO films, grown by ALD at low temperature E Przeździecka, W Paszkowicz, E Łusakowska, T Krajewski, G Łuka, ... Semiconductor Science and Technology 24 (10), 105014, 2009 | 74 | 2009 |
| Structural and optical properties of low-temperature ZnO films grown by atomic layer deposition with diethylzinc and water precursors IA Kowalik, E Guziewicz, K Kopalko, S Yatsunenko, A Wójcik-Głodowska, ... Journal of crystal growth 311 (4), 1096-1101, 2009 | 70 | 2009 |
| Composition dependence of the unit cell dimensions and the energy gap in Zn1-xMgxSe crystals F Firszt, H Meczynska, B Sekulska, J Szatkowski, W Paszkowicz, ... Semiconductor science and technology 10 (2), 197, 1995 | 64 | 1995 |
| High-pressure powder X-ray diffraction at the turn of the century W Paszkowicz Nuclear Instruments and Methods in Physics Research Section B: Beam …, 2002 | 60 | 2002 |
| Lattice parameters and orthorhombic distortion of CaMnO3 W Paszkowicz, J Piętosa, SM Woodley, PA Dłużewski, M Kozłowski, ... Powder Diffraction 25 (1), 46-59, 2010 | 58 | 2010 |
Roman MinikayevInstitute of Physics PAS, Warsaw Verified email at ifpan.edu.pl
