| Phase-change materials for non-volatile memory devices: from technological challenges to materials science issues P Noé, C Vallée, F Hippert, F Fillot, JY Raty Semiconductor Science and Technology 33 (1), 013002, 2017 | 328 | 2017 |
| A comparative study of oxygen/organosilicon plasmas and thin SiOxCyHz films deposited in a helicon reactor K Aumaille, C Vallée, A Granier, A Goullet, F Gaboriau, G Turban Thin Solid Films 359 (2), 188-196, 2000 | 188 | 2000 |
| Resistance switching in HfO2 metal-insulator-metal devices P Gonon, M Mougenot, C Vallée, C Jorel, V Jousseaume, H Grampeix, ... Journal of Applied Physics 107 (7), 2010 | 159 | 2010 |
| Understanding RRAM endurance, retention and window margin trade-off using experimental results and simulations C Nail, G Molas, P Blaise, G Piccolboni, B Sklenard, C Cagli, M Bernard, ... 2016 IEEE International Electron Devices Meeting (IEDM), 4.5. 1-4.5. 4, 2016 | 149 | 2016 |
| Modeling of nonlinearities in the capacitance-voltage characteristics of high-k metal-insulator-metal capacitors P Gonon, C Vallée Applied physics letters 90 (14), 2007 | 139 | 2007 |
| Diagnostics in helicon plasmas for deposition A Granier, F Nicolazo, C Vallée, A Goullet, G Turban, B Grolleau Plasma Sources Science and Technology 6 (2), 147, 1997 | 116 | 1997 |
| Optical emission spectra of TEOS and HMDSO derived plasmas used for thin film deposition A Granier, M Vervloet, K Aumaille, C Vallée Plasma Sources Science and Technology 12 (1), 89, 2003 | 102 | 2003 |
| Impedance and electric modulus study of amorphous TiTaO thin films: highlight of the interphase effect A Rouahi, A Kahouli, F Challali, MP Besland, C Vallée, B Yangui, ... Journal of Physics D: Applied Physics 46 (6), 065308, 2013 | 91 | 2013 |
| Inorganic to organic crossover in thin films deposited from O2/TEOS plasmas C Vallée, A Goullet, A Granier, A van Der Lee, J Durand, C Marliere Journal of non-crystalline solids 272 (2-3), 163-173, 2000 | 86 | 2000 |
| Selective deposition of Ta2O5 by adding plasma etching super-cycles in plasma enhanced atomic layer deposition steps R Vallat, R Gassilloud, B Eychenne, C Vallée Journal of Vacuum Science & Technology A 35 (1), 2017 | 81 | 2017 |
| Microstructure and electrical characterizations of yttrium oxide and yttrium silicate thin films deposited by pulsed liquid-injection plasma-enhanced metal-organic chemical … C Durand, C Dubourdieu, C Vallée, V Loup, M Bonvalot, O Joubert, ... Journal of applied physics 96 (3), 1719-1729, 2004 | 79 | 2004 |
| Impact of oxidation on Ge2Sb2Te5 and GeTe phase-change properties E Gourvest, B Pelissier, C Vallée, A Roule, S Lhostis, S Maitrejean Journal of The Electrochemical Society 159 (4), H373, 2012 | 78 | 2012 |
| Optical spectroscopic analyses of OH incorporation into films deposited from /tetraethoxysilane plasmas A Goullet, C Vallee, A Granier, G Turban Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films 18 (5 …, 2000 | 76 | 2000 |
| Plasma deposition—Impact of ions in plasma enhanced chemical vapor deposition, plasma enhanced atomic layer deposition, and applications to area selective deposition C Vallée, M Bonvalot, S Belahcen, T Yeghoyan, M Jaffal, R Vallat, ... Journal of Vacuum Science & Technology A 38 (3), 2020 | 73 | 2020 |
| Silicon dioxide deposition in a microwave plasma reactor N Benissad, C Boisse-Laporte, C Vallée, A Granier, A Goullet Surface and Coatings Technology 116, 868-873, 1999 | 70 | 1999 |
| Stress-induced leakage current and trap generation in HfO2 thin films C Mannequin, P Gonon, C Vallée, L Latu-Romain, A Bsiesy, H Grampeix, ... Journal of Applied Physics 112 (7), 2012 | 67 | 2012 |
| N-doped GeTe as performance booster for embedded phase-change memories A Fantini, V Sousa, L Perniola, E Gourvest, JC Bastien, S Maitrejean, ... 2010 International Electron Devices Meeting, 29.1. 1-29.1. 4, 2010 | 66 | 2010 |
| Experimental evidence for the role of electrodes and oxygen vacancies in voltage nonlinearities observed in high-k metal-insulator-metal capacitors F El Kamel, P Gonon, C Vallée Applied Physics Letters 91 (17), 2007 | 66 | 2007 |
| High performance metal-insulator-metal capacitor using a SrTiO3/ZrO2 bilayer C Jorel, C Vallée, P Gonon, E Gourvest, C Dubarry, E Defay Applied Physics Letters 94 (25), 2009 | 64 | 2009 |
| On the mechanisms of cation injection in conducting bridge memories: The case of HfO2 in contact with noble metal anodes (Au, Cu, Ag) M Saadi, P Gonon, C Vallée, C Mannequin, H Grampeix, E Jalaguier, ... Journal of Applied Physics 119 (11), 2016 | 59 | 2016 |
Patrice GONONLTM / Université Grenoble Alpes (UGA)Verified email at cea.fr
