| Spin-driven ordering of Cr in the equiatomic high entropy alloy NiFeCrCo C Niu, AJ Zaddach, AA Oni, X Sang, JW Hurt, JM LeBeau, CC Koch, ... Applied Physics Letters 106 (16), 2015 | 252 | 2015 |
| 300mm heterogeneous 3D integration of record performance layer transfer germanium PMOS with silicon NMOS for low power high performance logic applications W Rachmady, A Agrawal, SH Sung, G Dewey, S Chouksey, B Chu-Kung, ... 2019 IEEE International Electron Devices Meeting (IEDM), 29.7. 1-29.7. 4, 2019 | 235 | 2019 |
| 3-D self-aligned stacked NMOS-on-PMOS nanoribbon transistors for continued Moore’s law scaling CY Huang, G Dewey, E Mannebach, A Phan, P Morrow, W Rachmady, ... 2020 IEEE International Electron Devices Meeting (IEDM), 20.6. 1-20.6. 4, 2020 | 143 | 2020 |
| Advancing 2D monolayer CMOS through contact, channel and interface engineering KP O'Brien, CJ Dorow, A Penumatcha, K Maxey, S Lee, CH Naylor, ... 2021 IEEE International Electron Devices Meeting (IEDM), 7.1. 1-7.1. 4, 2021 | 129 | 2021 |
| Advancing monolayer 2-D nMOS and pMOS transistor integration from growth to van der Waals interface engineering for ultimate CMOS scaling C Dorow, K O’Brien, CH Naylor, S Lee, A Penumatcha, A Hsiao, T Tronic, ... IEEE Transactions on Electron Devices 68 (12), 6592-6598, 2021 | 79 | 2021 |
| Atom column indexing: atomic resolution image analysis through a matrix representation X Sang, AA Oni, JM LeBeau Microscopy and Microanalysis 20 (6), 1764-1771, 2014 | 76 | 2014 |
| Gate-All-Around Strained Si0.4Ge0.6 Nanosheet PMOS on Strain Relaxed Buffer for High Performance Low Power Logic Application A Agrawal, S Chouksey, W Rachmady, S Vishwanath, S Ghose, M Mehta, ... 2020 IEEE International Electron Devices Meeting (IEDM), 2.2. 1-2.2. 4, 2020 | 64 | 2020 |
| Advanced scaling of enhancement mode high-K gallium nitride-on-300mm-Si (111) transistor and 3D layer transfer GaN-silicon finfet CMOS integration HW Then, M Radosavljevic, P Koirala, N Thomas, N Nair, I Ban, ... 2021 IEEE International Electron Devices Meeting (IEDM), 11.1. 1-11.1. 4, 2021 | 63 | 2021 |
| Accurate nanoscale crystallography in real-space using scanning transmission electron microscopy JH Dycus, JS Harris, X Sang, CM Fancher, SD Findlay, AA Oni, TE Chan, ... Microscopy and Microanalysis 21 (4), 946-952, 2015 | 52 | 2015 |
| Gate length scaling beyond Si: mono-layer 2D channel FETs robust to short channel effects CJ Dorow, A Penumatcha, A Kitamura, C Rogan, KP O’Brien, S Lee, ... 2022 International Electron Devices Meeting (IEDM), 7.5. 1-7.5. 4, 2022 | 50 | 2022 |
| FeRAM using anti-ferroelectric capacitors for high-speed and high-density embedded memory SC Chang, N Haratipour, S Shivaraman, C Neumann, S Atanasov, J Peck, ... 2021 IEEE International Electron Devices Meeting (IEDM), 33.2. 1-33.2. 4, 2021 | 49 | 2021 |
| Structure and magnetic properties of a multi-principal element Ni–Fe–Cr–Co–Zn–Mn alloy AJ Zaddach, C Niu, AA Oni, M Fan, JM LeBeau, DL Irving, CC Koch Intermetallics 68, 107-112, 2016 | 44 | 2016 |
| Scaled submicron field-plated enhancement mode high-K gallium nitride transistors on 300mm Si (111) wafer with power FoM (R ON xQ GG) of 3.1 mohm-nC at 40V and f T/f MAX of 130 … HW Then, M Radosavljevic, P Koirala, M Beumer, S Bader, A Zubair, ... 2022 International Electron Devices Meeting (IEDM), 35.1. 1-35.1. 4, 2022 | 40 | 2022 |
| Hafnia-based FeRAM: A path toward ultra-high density for next-generation high-speed embedded memory N Haratipour, SC Chang, S Shivaraman, C Neumann, YC Liao, ... 2022 International Electron Devices Meeting (IEDM), 6.7. 1-6.7. 4, 2022 | 38 | 2022 |
| The role of terminal oxide structure and properties in nanothermite reactions EJ Mily, A Oni, JM LeBeau, Y Liu, HJ Brown-Shaklee, JF Ihlefeld, ... Thin Solid Films 562, 405-410, 2014 | 37 | 2014 |
| Enhancement-mode 300-mm GaN-on-Si (111) with integrated Si CMOS for future mm-wave RF applications HW Then, M Radosavljevic, Q Yu, A Latorre-Rey, H Vora, S Bader, ... IEEE Microwave and Wireless Technology Letters 33 (6), 835-838, 2023 | 34 | 2023 |
| Exploring manufacturability of novel 2D channel materials: 300 mm wafer-scale 2D NMOS & PMOS using MoS2, WS2, & WSe2 CJ Dorow, T Schram, Q Smets, KP O’Brien, K Maxey, CC Lin, L Panarella, ... 2023 International Electron Devices Meeting (IEDM), 1-4, 2023 | 32 | 2023 |
| 300 mm MOCVD 2D CMOS materials for more (than) Moore scaling K Maxey, CH Naylor, KP O'Brien, A Penumatcha, A Oni, C Mokhtarzadeh, ... 2022 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and …, 2022 | 31 | 2022 |
| Opportunities in 3-D stacked CMOS transistors M Radosavljević, CY Huang, W Rachmady, SH Seung, NK Thomas, ... 2021 IEEE international electron devices meeting (IEDM), 34.1. 1-34.1. 4, 2021 | 30 | 2021 |
| Effect of B and Cr on elastic strength and crystal structure of Ni3Al alloys under high pressure SV Raju, AA Oni, BK Godwal, J Yan, V Drozd, S Srinivasan, JM LeBeau, ... Journal of Alloys and Compounds 619, 616-620, 2015 | 30 | 2015 |
