| Neuromorphic computing using non-volatile memory YL Geoffrey W. Burr, Robert M. Shelby, Abu Sebastian, Sangbum Kim, Seyoung ... ADVANCES IN PHYSICS: X 2 (1), 89-124, 2016 | 1539* | 2016 |
| Improved Synaptic Behavior under Identical Pulses using AlOx/HfO2 Bilayer RRAM Array for Neuromorphic Systems J Woo, K Moon, J Song, S Lee, M Kwak, J Park, H Hwang IEEE Electron Device Letters 37 (8), 994-997, 2016 | 579 | 2016 |
| HfZrOx-Based Ferroelectric Synapse Device With 32 Levels of Conductance States for Neuromorphic Applications S Oh, T Kim, M Kwak, J Song, J Woo, S Jeon, IK Yoo, H Hwang IEEE Electron Device Letters 38 (6), 732-735, 2017 | 300 | 2017 |
| RRAM-based synapse devices for neuromorphic systems K Moon, S Lim, J Park, C Sung, S Oh, J Woo, J Lee, H Hwang Faraday discussions 213, 421-451, 2019 | 276 | 2019 |
| TiOx-Based RRAM Synapse With 64-Levels of Conductance and Symmetric Conductance Change by Adopting a Hybrid Pulse Scheme for Neuromorphic … J Park, M Kwak, K Moon, J Woo, D Lee, H Hwang IEEE Electron Device Letters 37 (12), 1559-1562, 2016 | 238 | 2016 |
| RRAM-based synapse for neuromorphic system with pattern recognition function S Park, H Kim, M Choo, J Noh, A Sheri, S Jung, K Seo, J Park, S Kim, ... 2012 international electron devices meeting, 10.2. 1-10.2. 4, 2012 | 236 | 2012 |
| Threshold selector with high selectivity and steep slope for cross-point memory array J Song, J Woo, A Prakash, D Lee, H Hwang IEEE Electron Device Letters 36 (7), 681-683, 2015 | 182 | 2015 |
| Demonstration of Low Power 3-bit Multilevel Cell Characteristics in a TaOx-Based RRAM by Stack Engineering A Prakash, J Park, J Song, J Woo, EJ Cha, H Hwang IEEE Electron Device Letters 36 (1), 32-34, 2014 | 182 | 2014 |
| High Current Density and Nonlinearity Combination of Selection Device Based on TaOx/TiO2/TaOx Structure for One Selector–One Resistor Arrays W Lee, J Park, S Kim, J Woo, J Shin, G Choi, S Park, D Lee, E Cha, ... ACS nano 6 (9), 8166-8172, 2012 | 176 | 2012 |
| Resistive memory-based analog synapse: The pursuit for linear and symmetric weight update J Woo, S Yu IEEE Nanotechnology magazine 12 (3), 36-44, 2018 | 147 | 2018 |
| Comprehensive scaling study of NbO2 insulator-metal-transition selector for cross point array application E Cha, J Park, J Woo, D Lee, A Prakash, H Hwang Applied Physics Letters 108 (15), 2016 | 130 | 2016 |
| Ultrathin (<10nm) Nb2O5/NbO2hybrid memory with both memory and selector characteristics for high density 3D vertically stackable RRAM applications S Kim, X Liu, J Park, S Jung, W Lee, J Woo, J Shin, G Choi, C Cho, S Park, ... 2012 Symposium on VLSI Technology (VLSIT), 155-156, 2012 | 127 | 2012 |
| Linking Conductive Filament Properties and Evolution to Synaptic Behavior of RRAM Devices for Neuromorphic Applications J Woo, A Padovani, K Moon, M Kwak, L Larcher, H Hwang IEEE Electron Device Letters 38 (9), 1220-1223, 2017 | 103 | 2017 |
| Varistor-type bidirectional switch (JMAX>107A/cm2, selectivity∼104) for 3D bipolar resistive memory arrays W Lee, J Park, J Shin, J Woo, S Kim, G Choi, S Jung, S Park, D Lee, ... 2012 Symposium on VLSI Technology (VLSIT), 37-38, 2012 | 102 | 2012 |
| Optimized Programming Scheme Enabling Linear Potentiation in Filamentary HfO2 RRAM Synapse for Neuromorphic Systems J Woo, K Moon, J Song, M Kwak, J Park, H Hwang IEEE Transactions on Electron Devices 63 (12), 5064-5067, 2016 | 101 | 2016 |
| Nanoscale (∼10nm) 3D vertical ReRAM and NbO2threshold selector with TiN electrode E Cha, J Woo, D Lee, S Lee, J Song, Y Koo, J Lee, CG Park, MY Yang, ... 2013 IEEE International Electron Devices Meeting, 10.5. 1-10.5. 4, 2013 | 95 | 2013 |
| Threshold-switching characteristics of a nanothin-NbO2-layer-based Pt/NbO2/Pt stack for use in cross-point-type resistive memories S Kim, J Park, J Woo, C Cho, W Lee, J Shin, G Choi, S Park, D Lee, ... Microelectronic Engineering 107, 33-36, 2013 | 80 | 2013 |
| Hardware implementation of associative memory characteristics with analogue-type resistive-switching device K Moon, S Park, J Jang, D Lee, J Woo, E Cha, S Lee, J Park, J Song, ... Nanotechnology 25 (49), 495204, 2014 | 66 | 2014 |
| Threshold switching behavior of Ag-Si based selector device and hydrogen doping effect on its characteristics J Yoo, J Woo, J Song, H Hwang Aip Advances 5 (12), 2015 | 64 | 2015 |
| Steep Slope Field-Effect Transistors With Ag/TiO2-Based Threshold Switching Device J Song, J Woo, S Lee, A Prakash, J Yoo, K Moon, H Hwang IEEE Electron Device Letters 37 (7), 932-934, 2016 | 63 | 2016 |
