| Nociceptive memristor Y Kim, YJ Kwon, DE Kwon, KJ Yoon, JH Yoon, S Yoo, HJ Kim, TH Park, ... Advanced Materials 30 (8), 1704320, 2018 | 233 | 2018 |
| A ferroelectric photocatalyst for enhancing hydrogen evolution: polarized particulate suspension S Park, CW Lee, MG Kang, S Kim, HJ Kim, JE Kwon, SY Park, CY Kang, ... Physical Chemistry Chemical Physics 16 (22), 10408-10413, 2014 | 127 | 2014 |
| Nucleation‐Limited Ferroelectric Orthorhombic Phase Formation in Hf0.5Zr0.5O2 Thin Films YH Lee, SD Hyun, HJ Kim, JS Kim, C Yoo, T Moon, KD Kim, HW Park, ... Advanced Electronic Materials 5 (2), 1800436, 2019 | 106 | 2019 |
| Thickness effect of ultra-thin Ta2O5 resistance switching layer in 28 nm-diameter memory cell TH Park, SJ Song, HJ Kim, SG Kim, S Chung, BY Kim, KJ Lee, KM Kim, ... Scientific reports 5 (1), 15965, 2015 | 79 | 2015 |
| Fabrication of a Cu‐cone‐shaped cation source inserted conductive bridge random access memory and its improved switching reliability HJ Kim, TH Park, KJ Yoon, WM Seong, JW Jeon, YJ Kwon, Y Kim, ... Advanced Functional Materials 29 (8), 1806278, 2019 | 77 | 2019 |
| Defect-Engineered Electroforming-Free Analog HfOx Memristor and Its Application to the Neural Network GS Kim, H Song, YK Lee, JH Kim, W Kim, TH Park, HJ Kim, K Min Kim, ... ACS applied materials & interfaces 11 (50), 47063-47072, 2019 | 66 | 2019 |
| A stateful logic family based on a new logic primitive circuit composed of two antiparallel bipolar memristors N Xu, TG Park, HJ Kim, X Shao, KJ Yoon, TH Park, L Fang, KM Kim, ... Advanced Intelligent Systems 2 (1), 1900082, 2020 | 59 | 2020 |
| Uniform Self-rectifying Resistive Switching Behavior via Preformed Conducting Paths in a Vertical-type Ta2O5/HfO2–x Structure with a Sub-μm2 Cell Area JH Yoon, S Yoo, SJ Song, KJ Yoon, DE Kwon, YJ Kwon, TH Park, HJ Kim, ... ACS Applied Materials & Interfaces 8 (28), 18215-18221, 2016 | 58 | 2016 |
| Double‐Layer‐Stacked One Diode‐One Resistive Switching Memory Crossbar Array with an Extremely High Rectification Ratio of 109 KJ Yoon, GH Kim, S Yoo, W Bae, JH Yoon, TH Park, DE Kwon, YJ Kwon, ... Advanced Electronic Materials 3 (7), 1700152, 2017 | 56 | 2017 |
| Filament Shape Dependent Reset Behavior Governed by the Interplay between the Electric Field and Thermal Effects in the Pt/TiO2/Cu Electrochemical … HJ Kim, KJ Yoon, TH Park, HJ Kim, YJ Kwon, XL Shao, DE Kwon, YM Kim, ... Advanced Electronic Materials 3 (2), 1600404, 2017 | 43 | 2017 |
| Sn self-doped α-Fe2O3 nanobranch arrays supported on a transparent, conductive SnO2 trunk to improve photoelectrochemical water oxidation S Park, HJ Kim, CW Lee, HJ Song, SS Shin, SW Seo, HK Park, S Lee, ... International journal of hydrogen energy 39 (29), 16459-16467, 2014 | 40 | 2014 |
| Hierarchical assembly of TiO2–SrTiO3 heterostructures on conductive SnO2 backbone nanobelts for enhanced photoelectrochemical and photocatalytic performance S Park, S Kim, HJ Kim, CW Lee, HJ Song, SW Seo, HK Park, DW Kim, ... Journal of hazardous materials 275, 10-18, 2014 | 38 | 2014 |
| Solvothermal synthesis of SnNb2O6 nanoplates and enhanced photocatalytic H2 evolution under visible light SW Seo, TH Noh, S Park, CW Lee, SH Kim, HJ Kim, HK Park, KS Hong International journal of hydrogen energy 39 (30), 17517-17523, 2014 | 37 | 2014 |
| Single‐Cell Stateful Logic Using a Dual‐Bit Memristor KM Kim, N Xu, X Shao, KJ Yoon, HJ Kim, RS Williams, CS Hwang physica status solidi (RRL)–Rapid Research Letters 13 (3), 1800629, 2019 | 34 | 2019 |
| Roles of conducting filament and non-filament regions in the Ta 2 O 5 and HfO 2 resistive switching memory for switching reliability TH Park, HJ Kim, WY Park, SG Kim, BJ Choi, CS Hwang Nanoscale 9 (18), 6010-6019, 2017 | 33 | 2017 |
| Heterogeneous reservoir computing in second-order Ta 2 O 5/HfO 2 memristors N Ghenzi, TW Park, SS Kim, HJ Kim, YH Jang, KS Woo, CS Hwang Nanoscale horizons 9 (3), 427-437, 2024 | 32 | 2024 |
| Balancing the source and sink of oxygen vacancies for the resistive switching memory TH Park, YJ Kwon, HJ Kim, HC Woo, GS Kim, CH An, Y Kim, DE Kwon, ... ACS applied materials & interfaces 10 (25), 21445-21450, 2018 | 32 | 2018 |
| Novel selector‐induced current‐limiting effect through asymmetry control for high‐density one‐selector–one‐resistor crossbar arrays Y Kim, YJ Kwon, J Kim, CH An, T Park, DE Kwon, HC Woo, HJ Kim, ... Advanced Electronic Materials 5 (7), 1800806, 2019 | 31 | 2019 |
| Investigation of the retention performance of an ultra-thin HfO2 resistance switching layer in an integrated memory device GS Kim, TH Park, HJ Kim, TJ Ha, WY Park, SG Kim, CS Hwang Journal of Applied Physics 124 (2), 2018 | 31 | 2018 |
| Interface engineering for improving reliability of resistance switching in Cu/HfO2/TiO2/Pt structure L Wei Zhou, X Long Shao, X Yuan Li, H Jiang, R Chen, K Jean Yoon, ... Applied Physics Letters 107 (7), 2015 | 30 | 2015 |
