| Temperature-Dependent Thermal Properties of Supported MoS2 Monolayers A Taube, J Judek, A Łapińska, M Zdrojek ACS applied materials & interfaces 7 (9), 5061-5065, 2015 | 260 | 2015 |
| Temperature dependence of Raman shifts in layered ReSe2 and SnSe2 semiconductor nanosheets A Taube, A Łapińska, J Judek, M Zdrojek Applied Physics Letters 107 (1), 2015 | 138 | 2015 |
| Temperature-Dependent Nonlinear Phonon Shifts in a Supported MoS2 Monolayer A Taube, J Judek, C Jastrzębski, A Duzynska, K Świtkowski, M Zdrojek ACS applied materials & interfaces 6 (12), 8959-8963, 2014 | 101 | 2014 |
| Temperature evolution of phonon properties in few-layer black phosphorus A Łapińska, A Taube, J Judek, M Zdrojek The Journal of Physical Chemistry C 120 (9), 5265-5270, 2016 | 79 | 2016 |
| Graphene-based plastic absorber for total sub-terahertz radiation shielding M Zdrojek, J Bomba, A Łapińska, A Dużyńska, K Żerańska-Chudek, ... Nanoscale 10 (28), 13426-13431, 2018 | 62 | 2018 |
| Ion implantation for isolation of AlGaN/GaN HEMTs using C or Al A Taube, E Kamińska, M Kozubal, J Kaczmarski, W Wojtasiak, J Jasiński, ... physica status solidi (a) 212 (5), 1162-1169, 2015 | 53 | 2015 |
| Raman Spectra of High‐κ Dielectric Layers Investigated with Micro‐Raman Spectroscopy Comparison with Silicon Dioxide P Borowicz, A Taube, W Rzodkiewicz, M Latek, S Gierałtowska The Scientific World Journal 2013 (1), 208081, 2013 | 50 | 2013 |
| AlGaN/GaN high electron mobility transistors on semi-insulating Ammono-GaN substrates with regrown ohmic contacts W Wojtasiak, M Góralczyk, D Gryglewski, M Zając, R Kucharski, ... Micromachines 9 (11), 546, 2018 | 48 | 2018 |
| Temperature-dependent thermal properties of single-walled carbon nanotube thin films A Duzynska, A Taube, KP Korona, J Judek, M Zdrojek Applied Physics Letters 106 (18), 183108, 2015 | 42 | 2015 |
| Electronic Properties of Thin HfO Films Fabricated by Atomic Layer Deposition on 4H-SiC A Taube, S Gierałtowska, T Gutt, T Małachowski, I Pasternak, ... Acta Physica Polonica A 119 (5), 696-698, 2011 | 39 | 2011 |
| Temperature induced phonon behaviour in germanium selenide thin films probed by Raman spectroscopy A Taube, A Łapińska, J Judek, N Wochtman, M Zdrojek Journal of Physics D: Applied Physics 49 (31), 315301, 2016 | 35 | 2016 |
| Temperature-dependent electrical characterization of high-voltage AlGaN/GaN-on-Si HEMTs with Schottky and ohmic drain contacts A Taube, J Kaczmarski, R Kruszka, J Grochowski, K Kosiel, ... Solid-State Electronics 111, 12-17, 2015 | 28 | 2015 |
| Characterization of Al2O3/4H-SiC and Al2O3/SiO2/4H-SiC MOS structures K Kosiel, K Król, A Taube, M Guziewicz, K Gołaszewska-Malec, R Kruszka, ... Bulletin of the Polish Academy of Sciences: Technical Sciences, 2016 | 26 | 2016 |
| High breakdown voltage and high current injection vertical GaN-on-GaN pn diodes with extremely low on-resistance fabricated on ammonothermally grown bulk GaN substrates A Taube, M Kamiński, J Tarenko, O Sadowski, M Ekielski, A Szerling, ... IEEE Transactions on Electron Devices 69 (11), 6255-6259, 2022 | 22 | 2022 |
| Effect of the post-deposition annealing on electrical characteristics of MIS structures with HfO2/SiO2 gate dielectric stacks A Taube, R Mroczyński, K Korwin-Mikke, S Gierałtowska, J Szmidt, ... Materials Science and Engineering: B 177 (15), 1281-1285, 2012 | 21 | 2012 |
| Application of deposited by ALD HfO2 and Al2O3 layers in double-gate dielectric stacks for non-volatile semiconductor memory (NVSM) devices R Mroczyński, A Taube, S Gierałtowska, E Guziewicz, M Godlewski Applied surface science 258 (21), 8366-8370, 2012 | 21 | 2012 |
| Selective etching of p-GaN over Al0. 25Ga0. 75N in Cl2/Ar/O2 ICP plasma for fabrication of normally-off GaN HEMTs A Taube, M Kamiński, M Ekielski, R Kruszka, J Jankowska-Śliwińska, ... Materials Science in Semiconductor Processing 122, 105450, 2021 | 19 | 2021 |
| Raman spectroscopy of layered lead tin disulfide (PbSnS2) thin films A Łapińska, A Taube, M Wąsik, GZ Żukowska, A Duzynska, J Judek, ... Journal of Raman Spectroscopy 48 (3), 479-484, 2017 | 19 | 2017 |
| Transparent Ru–Si–O/In–Ga–Zn–O MESFETs on flexible polymer substrates J Kaczmarski, A Taube, MA Borysiewicz, M Myśliwiec, K Piskorski, ... IEEE Transactions on Electron Devices 65 (1), 129-135, 2017 | 18 | 2017 |
| Enhancement of Ru-Si-O/In-Ga-Zn-O MESFET performance by reducing depletion region trap density J Kaczmarski, J Grochowski, E Kaminska, A Taube, M Borysiewicz, ... IEEE Electron Device Letters, 2015 | 18 | 2015 |
Mariusz ZdrojekWarsaw University of TechnologyVerified email at pw.edu.pl
