| Substrate-induced bandgap opening in epitaxial graphene SY Zhou, GH Gweon, AV Fedorov, PN First, WA De Heer, DH Lee, ... Nature materials 6 (10), 770-775, 2007 | 3018 | 2007 |
| Experimental observation of topological Fermi arcs in type-II Weyl semimetal MoTe2 K Deng, G Wan, P Deng, K Zhang, S Ding, E Wang, M Yan, H Huang, ... Nature Physics 12 (12), 1105-1110, 2016 | 903 | 2016 |
| Electric-field control of tri-state phase transformation with a selective dual-ion switch N Lu, P Zhang, Q Zhang, R Qiao, Q He, HB Li, Y Wang, J Guo, D Zhang, ... Nature 546 (7656), 124-128, 2017 | 813 | 2017 |
| Monolayer PtSe2, a New Semiconducting Transition-Metal-Dichalcogenide, Epitaxially Grown by Direct Selenization of Pt Y Wang, L Li, W Yao, S Song, JT Sun, J Pan, X Ren, C Li, E Okunishi, ... Nano letters 15 (6), 4013-4018, 2015 | 767 | 2015 |
| First direct observation of Dirac fermions in graphite SY Zhou, GH Gweon, J Graf, AV Fedorov, CD Spataru, RD Diehl, ... Nature physics 2 (9), 595-599, 2006 | 749 | 2006 |
| Synthesis and characterization of atomically thin graphite films on a silicon carbide substrate E Rollings, GH Gweon, SY Zhou, BS Mun, JL McChesney, BS Hussain, ... Journal of Physics and Chemistry of Solids 67 (9-10), 2172-2177, 2006 | 647 | 2006 |
| Wafer-Scale Growth and Transfer of Highly-Oriented Monolayer MoS2 Continuous Films H Yu, M Liao, W Zhao, G Liu, XJ Zhou, Z Wei, X Xu, K Liu, Z Hu, K Deng, ... ACS nano 11 (12), 12001-12007, 2017 | 593 | 2017 |
| Lorentz-violating type-II Dirac fermions in transition metal dichalcogenide PtTe2 M Yan, H Huang, K Zhang, E Wang, W Yao, K Deng, G Wan, H Zhang, ... Nature communications 8 (1), 257, 2017 | 510 | 2017 |
| Type-II Dirac fermions in the PtSe class of transition metal dichalcogenides H Huang, S Zhou, W Duan arXiv preprint arXiv:1607.07965, 2016 | 423 | 2016 |
| An unusual isotope effect in a high-transition-temperature superconductor GH Gweon, T Sasagawa, SY Zhou, J Graf, H Takagi, DH Lee, A Lanzara Nature 430 (6996), 187-190, 2004 | 421 | 2004 |
| Metal to insulator transition in epitaxial graphene induced by molecular doping SY Zhou, DA Siegel, AV Fedorov, A Lanzara Physical review letters 101 (8), 086402, 2008 | 395 | 2008 |
| Light-induced emergent phenomena in 2D materials and topological materials C Bao, P Tang, D Sun, S Zhou Nature Reviews Physics 4 (1), 33-48, 2022 | 333 | 2022 |
| Broadband electromagnetic response and ultrafast dynamics of few-layer epitaxial graphene H Choi, F Borondics, DA Siegel, SY Zhou, MC Martin, A Lanzara, ... Applied Physics Letters 94 (17), 2009 | 314 | 2009 |
| Experimental evidence of type-II Dirac fermions in PtSe2 K Zhang, M Yan, H Zhang, H Huang, M Arita, Z Sun, W Duan, Y Wu, ... arXiv preprint arXiv:1703.04242, 2017 | 294 | 2017 |
| Quasicrystalline 30 twisted bilayer graphene as an incommensurate superlattice with strong interlayer coupling W Yao, E Wang, C Bao, Y Zhang, K Zhang, K Bao, CK Chan, C Chen, ... Proceedings of the National Academy of Sciences 115 (27), 6928-6933, 2018 | 278 | 2018 |
| Universal high energy anomaly in the angle-resolved photoemission spectra of high temperature superconductors: Possible evidence of spinon and holon branches J Graf, GH Gweon, K McElroy, SY Zhou, C Jozwiak, E Rotenberg, A Bill, ... Physical review letters 98 (6), 067004, 2007 | 273 | 2007 |
| Gaps induced by inversion symmetry breaking and second-generation Dirac cones in graphene/hexagonal boron nitride E Wang, X Lu, S Ding, W Yao, M Yan, G Wan, K Deng, S Wang, G Chen, ... Nature Physics 12 (12), 1111-1115, 2016 | 247 | 2016 |
| Pseudospin-selective Floquet band engineering in black phosphorus S Zhou, C Bao, B Fan, H Zhou, Q Gao, H Zhong, T Lin, H Liu, P Yu, ... Nature 614 (7946), 75-80, 2023 | 244 | 2023 |
| Anisotropic Broadband Photoresponse of Layered Type‐II Weyl Semimetal MoTe2 J Lai, X Liu, J Ma, Q Wang, K Zhang, X Ren, Y Liu, Q Gu, X Zhuo, W Lu, ... Advanced materials 30 (22), 1707152, 2018 | 242 | 2018 |
| Origin of the energy bandgap in epitaxial graphene SY Zhou, DA Siegel, AV Fedorov, FE Gabaly, AK Schmid, AHC Neto, ... Nature Materials 7 (4), 259-260, 2008 | 239 | 2008 |
Wenhui DuanTsinghua University, Beijing, ChinaVerified email at tsinghua.edu.cn
