| p-doped 1.3 μm InAs∕ GaAs quantum-dot laser with a low threshold current density and high differential efficiency HY Liu, SL Liew, T Badcock, DJ Mowbray, MS Skolnick, SK Ray, TL Choi, ... Applied Physics Letters 89 (7), 2006 | 116 | 2006 |
| Optical transitions in type-II InAs∕ GaAs quantum dots covered by a GaAsSb strain-reducing layer CY Jin, HY Liu, SY Zhang, Q Jiang, SL Liew, M Hopkinson, TJ Badcock, ... Applied Physics Letters 91 (2), 2007 | 114 | 2007 |
| Ultrafast non-local control of spontaneous emission CY Jin, R Johne, MY Swinkels, TB Hoang, L Midolo, PJ van Veldhoven, ... Nature Nanotechnology 9 (11), 886-890, 2014 | 90 | 2014 |
| Photonic switching devices based on semiconductor nanostructures (Topical Review) CY Jin, O Wada Journal of Physics D: Applied Physics 47, 133001, 2014 | 60 | 2014 |
| 1.55 μm InAs quantum dots grown on a GaAs substrate using a GaAsSb metamorphic buffer layer HY Liu, Y Qiu, CY Jin, T Walther, AG Cullis Applied Physics Letters 92 (11), 2008 | 56 | 2008 |
| Observation and Modeling of a Room-Temperature Negative Characteristic Temperature 1.3-m p-Type Modulation-Doped Quantum-Dot Laser CY Jin, TJ Badcock, HY Liu, KM Groom, RJ Royce, DJ Mowbray, ... IEEE journal of quantum electronics 42 (12), 1259-1265, 2006 | 56 | 2006 |
| Vertical-geometry all-optical switches based on InAs/GaAs quantum dots in a cavity CY Jin, O Kojima, T Kita, O Wada, M Hopkinson, K Akahane Applied Physics Letters 95 (2), 021109, 2009 | 49 | 2009 |
| Detailed model and investigation of gain saturation and carrier spatial hole burning for a semiconductor optical amplifier with gain clamping by a vertical laser field CY Jin, YZ Huang, LJ Yu, S Deng IEEE journal of quantum electronics 40 (5), 513-518, 2004 | 43 | 2004 |
| Monolithically integrated electrically pumped continuous-wave III-V quantum dot light sources on silicon M Liao, S Chen, S Huo, S Chen, J Wu, M Tang, K Kennedy, W Li, S Kumar, ... IEEE Journal of Selected Topics in Quantum Electronics 23 (6), 1-10, 2017 | 38 | 2017 |
| 1.3 µm InAs/GaAs quantum-dot laser with low-threshold current density and negative characteristic temperature above room temperature TJ Badcock, HY Liu, KM Groom, CY Jin, M Gutierrez, M Hopkinson, ... Electronics Letters 42 (16), 922-923, 2006 | 38 | 2006 |
| Emerging near‐infrared luminescent materials for next‐generation broadband optical communications B Xu, C Jin, JS Park, H Liu, X Lin, J Cui, D Chen, J Qiu InfoMat 6 (8), e12550, 2024 | 35 | 2024 |
| Effect of facet angle on effective facet reflectivity and operating characteristics of quantum dot edge emitting lasers and superluminescent light-emitting diodes ZY Zhang, IJ Luxmoore, CY Jin, HY Liu, Q Jiang, KM Groom, DT Childs, ... Applied Physics Letters 91 (8), 2007 | 35 | 2007 |
| Broadband, wide-angle antireflection in GaAs through surface nano-structuring for solar cell applications S Behera, PW Fry, H Francis, CY Jin, M Hopkinson Scientific reports 10 (1), 6269, 2020 | 34 | 2020 |
| Precise arrays of epitaxial quantum dots nucleated by in situ laser interference for quantum information technology applications YR Wang, IS Han, CY Jin, M Hopkinson ACS applied nano materials 3 (5), 4739-4746, 2020 | 31 | 2020 |
| Double-pulse generation of indistinguishable single photons with optically controlled polarization J Yan, S Liu, X Lin, Y Ye, J Yu, L Wang, Y Yu, Y Zhao, Y Meng, X Hu, ... Nano Letters 22 (4), 1483-1490, 2022 | 30 | 2022 |
| 1.34 µm GaInNAs quantum well lasers with low room-temperature threshold current density M Hopkinson, CY Jin, HY Liu, P Navaretti, R Airey Electronics Letters 42 (16), 923-924, 2006 | 29 | 2006 |
| Control of the electromagnetic environment of a quantum emitter by shaping the vacuum field in a coupled-cavity system R Johne, R Schutjens, S Fattah poor, CY Jin, A Fiore Physical Review A 91 (6), 063807, 2015 | 27 | 2015 |
| Temperature-dependent carrier tunneling for self-assembled InAs/GaAs quantum dots with a GaAsN quantum well injector CY Jin, S Ohta, M Hopkinson, O Kojima, T Kita, O Wada Applied Physics Letters 96 (15), 2010 | 25 | 2010 |
| Coherent control of a high-orbital hole in a semiconductor quantum dot JY Yan, C Chen, XD Zhang, YT Wang, HG Babin, AD Wieck, A Ludwig, ... Nature Nanotechnology 18 (10), 1139-1146, 2023 | 24 | 2023 |
| Detailed design and characterization of all-optical switches based on InAs/GaAs quantum dots in a vertical cavity CY Jin, O Kojima, T Inoue, T Kita, O Wada, M Hopkinson, K Akahane IEEE journal of quantum electronics 46 (11), 1582-1589, 2010 | 24 | 2010 |
Mark HopkinsonUniversity of SheffieldVerified email at sheffield.ac.uk
