| Barrier characteristics of gold Schottky contacts on moderately doped n-InP based on temperature dependent I–V and C–V measurements M Soylu, B Abay Microelectronic Engineering 86 (1), 88-95, 2009 | 76 | 2009 |
| Analysing space charge-limited conduction in Au/n-InP Schottky diodes M Soylu, B Abay Physica E: Low-dimensional Systems and Nanostructures 43 (1), 534-538, 2010 | 73 | 2010 |
| Photoelectrical characterization of a new generation diode having GaFeO3 interlayer M Soylu, M Cavas, AA Al-Ghamdi, ZH Gafer, F El-Tantawy, ... Solar Energy Materials and Solar Cells 124, 180-185, 2014 | 63 | 2014 |
| Analysis of barrier height inhomogeneity in Au/n-GaAs Schottky barrier diodes by Tung model M Soylu, F Yakuphanoglu Journal of Alloys and Compounds 506 (1), 418-422, 2010 | 62 | 2010 |
| Photovoltaic and interface state density properties of the Au/n-GaAs Schottky barrier solar cell M Soylu, F Yakuphanoglu Thin Solid Films 519 (6), 1950-1954, 2011 | 59 | 2011 |
| Solar light sensitive photodiode produced using a coumarin doped bismuth oxide composite A Dere, M Soylu, F Yakuphanoglu Materials Science in Semiconductor Processing 90, 129-142, 2019 | 48 | 2019 |
| Effects of interface states and series resistance on electrical properties of Al/nanostructure CdO/p-GaAs diode İ Taşçıoğlu, M Soylu, Ş Altındal, AA Al-Ghamdi, F Yakuphanoglu Journal of alloys and compounds 541, 462-467, 2012 | 48 | 2012 |
| Transparent CdO/n-GaN (0001) heterojunction for optoelectronic applications M Soylu, AA Al-Ghamdi, F Yakuphanoglu Journal of Physics and Chemistry of Solids 85, 26-33, 2015 | 47 | 2015 |
| Controlling the properties of ZnO thin films by varying precursor concentration M Soylu, M Coskun Journal of Alloys and Compounds 741, 957-968, 2018 | 44 | 2018 |
| Ruthenium (II) complex based photodiode for organic electronic applications A Tataroglu, R Ocaya, A Dere, O Dayan, Z Serbetci, AG Al-Sehemi, ... Journal of Electronic Materials 47 (1), 828-833, 2018 | 40 | 2018 |
| Electrical and optical properties of ZnO/Si heterojunctions as a function of the Mg dopant content M Soylu, O Savas Materials Science in Semiconductor Processing 29, 76-82, 2015 | 38 | 2015 |
| Photodiode based on CdO thin films as electron transport layer M Soylu, HS Kader Journal of electronic materials 45 (11), 5756-5763, 2016 | 36 | 2016 |
| Optoelectrical properties of Al/p-Si/Fe: N doped ZnO/Al diodes B Coşkun, K Mensah-Darkwa, M Soylu, AG Al-Sehemi, A Dere, ... Thin Solid Films 653, 236-248, 2018 | 33 | 2018 |
| Modification of electrical properties of Al/p-Si Schottky barrier device based on 2′-7′-dichlorofluorescein M Soylu, IS Yahia, F Yakuphanoglu, WA Farooq Journal of Applied Physics 110 (7), 2011 | 33 | 2011 |
| Influence of illumination intensity and temperature on the electrical characteristics of an Al/p-GaAs/In structure prepared by thermal evaporation M Soylu, AA Al-Ghamdi, F Yakuphanoglu Microelectronic engineering 99, 50-57, 2012 | 30 | 2012 |
| Controlling of conduction mechanism and electronic parameters of silicon–metal junction by mixed Methylene Blue/2′-7′-dichlorofluorescein M Soylu, OA Al-Hartomy, SAF Al Said, AA Al-Ghamdi, IS Yahia, ... Microelectronics Reliability 53 (12), 1901-1906, 2013 | 27 | 2013 |
| The electrical characterization of ZnO/GaAs heterojunction diode M Soylu, AA Al-Ghamdi, OA Al-Hartomy, F El-Tantawy, F Yakuphanoglu Physica E: Low-dimensional Systems and Nanostructures 64, 240-245, 2014 | 26 | 2014 |
| Study of optical and electrical assessments of the quaternary MgZnSnO system containing different Mg content M Soylu, H Aydin, AA Al-Ghamdi, WA Farooq, F Yakuphanoglu Journal of Materials Science: Materials in Electronics 25 (10), 4235-4245, 2014 | 24 | 2014 |
| The effect of thickness of organic layer on electronic properties of Al/Rhodamine B/p-Si structure M Soylu Materials science in semiconductor processing 14 (3-4), 212-218, 2011 | 23 | 2011 |
| Controlling of electronic parameters of GaAs Schottky diode by poly (3, 4-ethylenedioxithiophene)-block-poly (ethylene glycol) organic interlayer ME Aydın, M Soylu, F Yakuphanoglu, WA Farooq Microelectronic engineering 88 (6), 867-871, 2011 | 23 | 2011 |
