| Structures for constructing devices from formed Mn4Si7 and CoSi films MT Normuradov, IR Bekpulatov, GT Imanova, BD Igamov Advanced Physical Research 4 (3), 142-154, 2022 | 41 | 2022 |
| Peculiarities of the electron structure of nanosized ion-implanted layers in silicon AS Rysbaev, ZB Khuzhaniyazov, MT Normuradov, AM Rakhimov, ... Technical Physics 59 (11), 1705-1710, 2014 | 18 | 2014 |
| Method for additional purification of the surface of Si (111) single crystal AS Risbaev, JB Khujaniyazov, IR Bekpulatov, AM Rakhimov Journal of Surface Investigation: X-ray, Synchrotron and Neutron Techniques …, 2017 | 16 | 2017 |
| Effect of thermal and laser annealing on the atom distribution profiles in Si(111) implanted with P+ and B+ ions AS Rysbaev, JB Khujaniyozov, IR Bekpulatov, AM Rakhimov, ... Journal of surface investigation: X-ray, synchrotron and neutron techniques …, 2017 | 16 | 2017 |
| Composition, morphology, and electronic structure of the nanophases created on the SiO2 Surface by Ar+ ion bombardment MB Yusupjanova, DA Tashmukhamedova, BE Umirzakov Technical Physics 61 (4), 628-630, 2016 | 14 | 2016 |
| Наноматериалы и перспективы их применения БЕ Умирзаков, МТ Нормурадов, ДА Ташмухамедова, АК Ташатов Ташкент: MERIYUS 256, 2008 | 13 | 2008 |
| Сверхвысоковакуумная установка для комплексного исследования поверхности и отработки технологии получения ионно-имплантированных структур МТ Нормурадов, ДС Руми, АС Рысбаев Изв. Ан УзССР. Сер. Физ-мат 4, 70-73, 1986 | 11 | 1986 |
| Formation of Mn4Si7/Si (111), CrSi2/Si (111), and CoSi2/Si (111) thin film and evaluation of their optically direct and indirect band gap KT Dovranov, MT Normuradov, KT Davranov, IR Bekpulatov Ukrainian journal of physics 69 (1), 20-20, 2024 | 10 | 2024 |
| Formation of Mn4 Si7 films by magnetron sputtering and a wide range of their thermoelectric properties IR Bekpulatov, VV Loboda, MT Normuradov, BD Donaev, IK Turapov St. Petersburg Polytechnic University Journal: Physics and Mathematics 66 (2 …, 2023 | 8 | 2023 |
| Development of technology for obtaining nanosized heterostructured films by ion-plasma deposition MT Normuradov, ST Khozhiev, KT Dovranov, KT Davranov, MA Davlatov, ... Ukrainian journal of physics 68 (3), 210-210, 2023 | 7 | 2023 |
| Peculiarities of BaTiO3 in electronic and X-Ray analysis MT Normuradov, ST Khozhiev, LB Akhmedova, IO Kosimov, MA Davlatov, ... E3S Web of Conferences 383, 04068, 2023 | 7 | 2023 |
| Izv. Akad. Nauk UzSSR, Ser. Fiz.-Mat MT Normuradov, DS Rumi, AS Rysbaev Nauk, No. 4, 70, 1986 | 7 | 1986 |
| On new two-dimensional structures produced on the Si (111) and Si (100) surface upon molecular-beam epitaxy of cobalt and silicon AS Rysbaev, AK Tashatov, SX Dzhuraev, ZB Khuzhaniyazov, G Arzikulov, ... Journal of Surface Investigation. X-ray, Synchrotron and Neutron Techniques …, 2011 | 6 | 2011 |
| ПРОЦЕСС ФОРМИРОВАНИЯ НАНОПЛЕНОК НА ПОВЕРХНОСТИ CaF 2 ПРИ ИОННОЙ ИМПЛАНТАЦИИ И ПОСЛЕДУЮЩЕМ ОТЖИГЕ БЕ Умирзаков, АК Ташатов, ДА Ташмухамедова, МТ Нормурадов Поверхность. Рентгеновские, синхротронные и нейтронные исследования, 90-94, 2004 | 6 | 2004 |
| Properties of silicide films formed by low-energy implantation of metal ions into silicon AS Rysbaev, MT Normuradov, SS Nasridinov, KA Adambaev Journal of Communications Technology and Electronics 42 (1), 114-117, 1997 | 6 | 1997 |
| Nanomaterials and Prospects for their Application BE Umirzakov, MT Normuradov, DA Tashmukhamedova, AK Tashatov MERIYUS, 2008 | 5 | 2008 |
| Structure of МеSi Silicide Films (Me: Li, Rb, K and Cs) According to Electron Microscopy Data and the Diffraction of Slow Electrons MT Normuradov, AS Risbaev, JB Khujaniyozov, DA Normuradov Journal of Surface Investigation: X-ray, Synchrotron and Neutron Techniques …, 2020 | 4 | 2020 |
| Variations in the electronic structure of the silicon near-surface region during implantation of phosphorus and boron ions MT Normuradov, AK Tashatov, AS Rysbaev, ZB Khuzhaniyazov, ... Journal of Communications Technology and Electronics 52 (8), 898-900, 2007 | 4 | 2007 |
| Электронная структура наноразмерных структур Ga1− xAlxAs, созданных на поверхности GaAs методом ионной имплантации СБ Донаев, БЕ Умирзаков, ДА Ташмухамедова Журнал технической физики 85 (10), 2015 | 3 | 2015 |
| DA Tash mukhamedova, and AK Tashatov BE Umirzakov, MT Normuradov Nanomaterials and Prospects for their Application, 2008 | 3 | 2008 |
