| Growth of Nb-Doped Monolayer WS2 by Liquid-Phase Precursor Mixing Z Qin, L Loh, J Wang, X Xu, Q Zhang, B Haas, C Alvarez, H Okuno, ... ACS nano 13 (9), 10768-10775, 2019 | 158 | 2019 |
| Atomic scale confirmation of ferroelectric polarization inversion in wurtzite-type AlScN N Wolff, S Fichtner, B Haas, MR Islam, F Niekiel, M Kessel, O Ambacher, ... Journal of Applied Physics 129 (3), 2021 | 111 | 2021 |
| Ultrathin Ga2O3 Glass: A Large‐Scale Passivation and Protection Material for Monolayer WS2 M Wurdack, T Yun, E Estrecho, N Syed, S Bhattacharyya, M Pieczarka, ... Advanced Materials 33 (3), 2005732, 2021 | 91 | 2021 |
| From Fully Strained to Relaxed: Epitaxial Ferroelectric Al1‐xScxN for III‐N Technology G Schönweger, A Petraru, MR Islam, N Wolff, B Haas, A Hammud, C Koch, ... Advanced Functional Materials 32 (21), 2109632, 2022 | 79 | 2022 |
| Direct comparison of off-axis holography and differential phase contrast for the mapping of electric fields in semiconductors by transmission electron microscopy. B Haas, JL Rouviere, V Boureau, R Berthier, D Cooper Ultramicroscopy 198, 58-72, 2019 | 76 | 2019 |
| Synthesis and characterization of colloidal fluorescent silver nanoclusters S Huang, C Pfeiffer, J Hollmann, S Friede, JJC Chen, A Beyer, B Haas, ... Langmuir 28 (24), 8915-8919, 2012 | 75 | 2012 |
| Attribution of the 3.45 eV GaN nanowires luminescence to inversion domain boundaries T Auzelle, B Haas, M Den Hertog, JL Rouvière, B Daudin, B Gayral Applied Physics Letters 107 (5), 2015 | 64 | 2015 |
| The influence of AlN buffer over the polarity and the nucleation of self-organized GaN nanowires T Auzelle, B Haas, A Minj, C Bougerol, JL Rouvière, A Cros, J Colchero, ... Journal of Applied Physics 117 (24), 2015 | 62 | 2015 |
| High-k 2D Sb2O3 Made Using a Substrate-Independent and Low-Temperature Liquid-Metal-Based Process KA Messalea, N Syed, A Zavabeti, M Mohiuddin, A Jannat, ... ACS nano 15 (10), 16067-16075, 2021 | 53 | 2021 |
| Highly efficient spin-to-charge current conversion in strained HgTe surface states protected by a HgCdTe layer P Noel, C Thomas, Y Fu, L Vila, B Haas, PH Jouneau, S Gambarelli, ... Physical Review Letters 120 (16), 167201, 2018 | 51 | 2018 |
| Nonpolar m-plane GaN/AlGaN heterostructures with intersubband transitions in the 5–10 THz band CB Lim, A Ajay, C Bougerol, B Haas, J Schörmann, M Beeler, ... Nanotechnology 26 (43), 435201, 2015 | 46 | 2015 |
| Atomic structure of (110) anti-phase boundaries in GaP on Si (001) A Beyer, B Haas, KI Gries, K Werner, M Luysberg, W Stolz, K Volz Applied Physics Letters 103 (3), 2013 | 45 | 2013 |
| InGaN nanowires with high InN molar fraction: growth, structural and optical properties X Zhang, H Lourenço-Martins, S Meuret, M Kociak, B Haas, JL Rouvière, ... Nanotechnology 27 (19), 195704, 2016 | 34 | 2016 |
| Atomic-resolution mapping of localized phonon modes at grain boundaries B Haas, TM Boland, C Elsässer, AK Singh, K March, J Barthel, CT Koch, ... Nano letters 23 (13), 5975-5980, 2023 | 30 | 2023 |
| Microstructure and elastic constants of transition metal dichalcogenide monolayers from friction and shear force microscopy X Xu, T Schultz, Z Qin, N Severin, B Haas, S Shen, JN Kirchhof, A Opitz, ... Advanced Materials 30 (39), 1803748, 2018 | 25 | 2018 |
| Increasing spatial fidelity and SNR of 4D-STEM using multi-frame data fusion CM O'Leary, B Haas, CT Koch, PD Nellist, L Jones Microscopy and Microanalysis 28 (4), 1417-1427, 2022 | 23 | 2022 |
| Spatial phase distributions in solution-based and evaporated Cs–Pb–Br thin films S Caicedo-Davila, H Funk, R Lovrincic, C Müller, M Sendner, ... The Journal of Physical Chemistry C 123 (29), 17666-17677, 2019 | 23 | 2019 |
| Large area ultrathin InN and Tin doped InN nanosheets featuring 2D electron gases N Syed, A Stacey, A Zavabeti, CK Nguyen, B Haas, CT Koch, DL Creedon, ... ACS nano 16 (4), 5476-5486, 2022 | 21 | 2022 |
| Composition Analysis of III-Nitrides at the Nanometer Scale: Comparison of Energy Dispersive X-ray Spectroscopy and Atom Probe Tomography EMCB Bastien Bonef, Miguel Lopez-Haro, Lynda Amichi, Mark Beeler, Adeline ... Nanoscale Research Letters 11, 461, 2016 | 21 | 2016 |
| Growth mechanism of InGaN nano-umbrellas X Zhang, B Haas, JL Rouvière, E Robin, B Daudin Nanotechnology 27 (45), 455603, 2016 | 21 | 2016 |
Christoph T. KochDepartment of Physics, Humboldt University of BerlinVerified email at hu-berlin.de
