| Methods of forming silicon germanium structures R KHAZAKA, LPB Lima US Patent 11,688,603, 2023 | 315 | 2023 |
| GeSn lasers covering a wide wavelength range thanks to uniaxial tensile strain J Chrétien, N Pauc, F Armand Pilon, M Bertrand, QM Thai, L Casiez, ... ACS photonics 6 (10), 2462-2469, 2019 | 173 | 2019 |
| Characterization of nanosilver dry films for high-temperature applications R Khazaka, B Thollin, L Mendizabal, D Henry, R Hanna IEEE Transactions on Device and Materials Reliability 15 (2), 149-155, 2015 | 29 | 2015 |
| Growth and characterization of SiGeSn pseudomorphic layers on 200 mm Ge virtual substrates R Khazaka, E Nolot, J Aubin, JM Hartmann Semiconductor Science and Technology 33 (12), 124011, 2018 | 22 | 2018 |
| Contact resistivity of highly doped Si: P, Si: As, and Si: P: As Epi layers for source/drain epitaxy E Rosseel, C Porret, AY Hikavyy, R Loo, M Tirrito, B Douhard, O Richard, ... ECS Transactions 98 (5), 37, 2020 | 21 | 2020 |
| Silver versus white sheet as a back reflector for microcrystalline silicon solar cells deposited on LPCVD‐ZnO electrodes of various textures R Khazaka, E Moulin, M Boccard, L Garcia, S Hänni, FJ Haug, F Meillaud, ... Progress in Photovoltaics: Research and Applications 23 (9), 1182-1189, 2015 | 21 | 2015 |
| Epitaxial growth of Ga-doped SiGe for reduction of contact resistance in finFET source/drain materials J Margetis, D Kohen, C Porret, L Lima, R Khazaka, G Rengo, R Loo, ... ECS Transactions 93 (1), 7, 2019 | 15 | 2019 |
| Direct insight into grains formation in Si layers grown on 3C-SiC by chemical vapor deposition R Khazaka, M Portail, P Vennéguès, D Alquier, JF Michaud Acta Materialia 98, 336-342, 2015 | 15 | 2015 |
| Low temperature source/drain epitaxy and functional silicides: essentials for ultimate contact scaling C Porret, JL Everaert, M Schaekers, LA Ragnarsson, A Hikavyy, ... 2022 International Electron Devices Meeting (IEDM), 34.1. 1-34.1. 4, 2022 | 14 | 2022 |
| Mid-infrared GeSn-based LEDs with Sn content up to 16% M Bertrand, N Pauc, QM Thai, J Chrétien, L Casiez, A Quintero, ... 2019 IEEE 16th International Conference on Group IV Photonics (GFP), 1-2, 2019 | 13 | 2019 |
| Toward high-quality 3C–SiC membrane on a 3C–SiC pseudo-substrate R Khazaka, E Bahette, M Portail, D Alquier, JF Michaud Materials Letters 160, 28-30, 2015 | 12 | 2015 |
| Investigation of the growth of Si-Ge-Sn pseudomorphic layers on 200 mm Ge virtual substrates: impact of growth pressure, HCl and Si2H6 flows R Khazaka, J Aubin, E Nolot, JM Hartmann ECS Transactions 86 (7), 207, 2018 | 9 | 2018 |
| Vertical GeSn electro-absorption modulators grown on Silicon for the mid-infrared M Bertrand, L Casiez, A Quintero, J Chrétien, N Pauc, QM Thai, ... 2020 IEEE Photonics Conference (IPC), 1-2, 2020 | 8 | 2020 |
| Silicon Growth on 3C-SiC (001)/Si (001): Pressure Influence and Thermal Effect R Khazaka, M Portail, P Vennéguès, M Zielinski, T Chassagne, D Alquier, ... Materials Science Forum 821, 978-981, 2015 | 7 | 2015 |
| Source/Drain Epitaxy for Nanosheet-Based CFET Devices E Rosseel, C Porret, T Dursap, R Loo, H Mertens, J Ganguly, R Sarkar, ... ECS Transactions 114 (2), 29, 2024 | 6 | 2024 |
| 300 mm Wafer-scale In-situ CVD Growth Achieving 5.1×10-10 Ω-cm2 P-Type Contact Resistivity: Record 2.5×1021 cm-3 Active Doping and Demonstration on … H Xu, R Khazaka, J Zhang, Z Zheng, Y Chen, X Gong 2022 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and …, 2022 | 6 | 2022 |
| Ultra-low Specific Contact Resistivity (3.2×10-10 Ω-cm2) of Ti/Si0.5Ge0.5 Contact: Deep Insights into the Role of Interface Reaction and Ga Co-doping H Xu, X Wang, S Luo, J Zhang, K Han, C Sun, C Wang, R Khazaka, Q Xie, ... 2021 Symposium on VLSI Technology, 1-2, 2021 | 6 | 2021 |
| Realization of minimum number of rotational domains in heteroepitaxied Si(110) on 3C-SiC(001) R Khazaka, M Grundmann, M Portail, P Vennéguès, M Zielinski, ... Applied Physics Letters 108 (1), 011608, 2016 | 6 | 2016 |
| Low Temperature Selective Epitaxy of Group-IV Semiconductors for Nanoelectronics R Khazaka, B Marozas, W Kim, M Givens ECS Transactions 109 (4), 87, 2022 | 5 | 2022 |
| B and Ga Co-Doped Si1− xGex for p-Type Source/Drain Contacts G Rengo, C Porret, A Hikavyy, E Rosseel, M Ayyad, RJH Morris, ... ECS Journal of Solid State Science and Technology 11 (2), 024008, 2022 | 5 | 2022 |
Philippe venneguesCNRS-CRHEAVerified email at crhea.cnrs.fr
