| A Physical Model for the Hysteresis in MoS2 Transistors T Knobloch, G Rzepa, YY Illarionov, M Waltl, F Schanovsky, B Stampfer, ... IEEE Journal of the Electron Devices Society 6, 972-978, 2018 | 88 | 2018 |
| Characterization of Single Defects in Ultrascaled MoS2 Field-Effect Transistors B Stampfer, F Zhang, YY Illarionov, T Knobloch, P Wu, M Waltl, A Grill, ... ACS nano 12 (6), 5368-5375, 2018 | 87 | 2018 |
| Perspective of 2D integrated electronic circuits: Scientific pipe dream or disruptive technology? M Waltl, T Knobloch, K Tselios, L Filipovic, B Stampfer, Y Hernandez, ... Advanced Materials 34 (48), 2201082, 2022 | 56 | 2022 |
| Toward automated defect extraction from bias temperature instability measurements D Waldhoer, C Schleich, J Michl, B Stampfer, K Tselios, EG Ioannidis, ... IEEE Transactions on Electron Devices 68 (8), 4057-4063, 2021 | 44 | 2021 |
| Efficient physical defect model applied to PBTI in high-κ stacks G Rzepa, J Franco, A Subirats, M Jech, A Chasin, A Grill, M Waltl, ... 2017 IEEE International Reliability Physics Symposium (IRPS), XT-11.1-XT-11.6, 2017 | 39 | 2017 |
| Evidence of tunneling driven random telegraph noise in cryo-CMOS J Michl, A Grill, B Stampfer, D Waldhoer, C Schleich, T Knobloch, ... 2021 IEEE International Electron Devices Meeting (IEDM), 31.3. 1-31.3. 4, 2021 | 28 | 2021 |
| Single-versus multi-step trap assisted tunneling currents—Part I: Theory C Schleich, D Waldhör, T Knobloch, W Zhou, B Stampfer, J Michl, M Waltl, ... IEEE Transactions on Electron Devices 69 (8), 4479-4485, 2022 | 24 | 2022 |
| Implications of gate-sided hydrogen release for post-stress degradation build-up after BTI stress T Grasser, M Waltl, K Puschkarsky, B Stampfer, G Rzepa, G Pobegen, ... 2017 IEEE International Reliability Physics Symposium (IRPS), 6A-2.1-6A-2.6, 2017 | 24 | 2017 |
| Separation of electron and hole trapping components of PBTI in SiON nMOS transistors M Waltl, B Stampfer, G Rzepa, B Kaczer, T Grasser Microelectronics Reliability 114, 113746, 2020 | 23 | 2020 |
| Observation of Rich Defect Dynamics in Monolayer MoS2 H Ravichandran, T Knobloch, A Pannone, A Karl, B Stampfer, D Waldhoer, ... ACS nano 17 (15), 14449-14460, 2023 | 22 | 2023 |
| Semi-automated extraction of the distribution of single defects for nMOS transistors B Stampfer, F Schanovsky, T Grasser, M Waltl Micromachines 11 (4), 446, 2020 | 21 | 2020 |
| A stochastic encoder using point defects in two-dimensional materials H Ravichandran, T Knobloch, S Subbulakshmi Radhakrishnan, ... Nature communications 15 (1), 10562, 2024 | 18 | 2024 |
| The mysterious bipolar bias temperature stress from the perspective of gate-sided hydrogen release T Grasser, B Kaczer, B O’Sullivan, G Rzepa, B Stampfer, M Waltl 2020 IEEE International Reliability Physics Symposium (IRPS), 1-6, 2020 | 17 | 2020 |
| Characterization and physical modeling of the temporal evolution of near-interfacial states resulting from NBTI/PBTI stress in nMOS/pMOS transistors T Grasser, B Stampfer, M Waltl, G Rzepa, K Rupp, F Schanovsky, ... 2018 IEEE International Reliability Physics Symposium (IRPS), 2A. 2-1-2A. 2-10, 2018 | 17 | 2018 |
| Characterization and modeling of single defects in GaN/AlGaN fin-MIS-HEMTs A Grill, B Stampfer, M Waltl, KS Im, JH Lee, C Ostermaier, H Ceric, ... 2017 IEEE International Reliability Physics Symposium (IRPS), 3B-5.1-3B-5.5, 2017 | 15 | 2017 |
| Reliability Assessment of Double-Gated Wafer-Scale MoS2 Field Effect Transistors through Hysteresis and Bias Temperature Instability Analyses A Provias, T Knobloch, A Kitamura, KP O’Brien, CJ Dorow, D Waldhoer, ... 2023 International Electron Devices Meeting (IEDM), 1-4, 2023 | 14 | 2023 |
| Electrostatic coupling and identification of single-defects in GaN/AlGaN Fin-MIS-HEMTs A Grill, B Stampfer, KS Im, JH Lee, C Ostermaier, H Ceric, M Waltl, ... Solid-State Electronics 156, 41-47, 2019 | 14 | 2019 |
| Advanced electrical characterization of single oxide defects utilizing noise signals B Stampfer, A Grill, M Waltl Noise in Nanoscale Semiconductor Devices, 229-257, 2020 | 12 | 2020 |
| Analysis of single electron traps in nano-scaled MoS2 FETs at cryogenic temperatures T Knobloch, J Michl, D Waldhör, Y Illarionov, B Stampfer, A Grill, R Zhou, ... Proceedings of the Device Research Conference (DRC), 52-53, 2020 | 11 | 2020 |
| Advanced electrical characterization of charge trapping in MOS transistors B Stampfer Technische Universität Wien, 2020 | 10 | 2020 |
