| Two-micron-wavelength germanium-tin photodiodes with low dark current and gigahertz bandwidth Y Dong, W Wang, S Xu, D Lei, X Gong, X Guo, H Wang, SY Lee, WK Loke, ... Optics express 25 (14), 15818-15827, 2017 | 111 | 2017 |
| Suppression of dark current in germanium-tin on silicon pin photodiode by a silicon surface passivation technique Y Dong, W Wang, D Lei, X Gong, Q Zhou, SY Lee, WK Loke, SF Yoon, ... Optics express 23 (14), 18611-18619, 2015 | 105 | 2015 |
| Monolithic integration of InSb photodetector on silicon for mid-infrared silicon photonics BW Jia, KH Tan, WK Loke, S Wicaksono, KH Lee, SF Yoon ACS Photonics 5 (4), 1512-1520, 2018 | 94 | 2018 |
| Comparison of nitrogen compositions in the as-grown on GaAs measured by high-resolution x-ray diffraction and secondary-ion mass spectroscopy WJ Fan, SF Yoon, TK Ng, SZ Wang, WK Loke, R Liu, A Wee Applied physics letters 80 (22), 4136-4138, 2002 | 87 | 2002 |
| Growth of GaAs on vicinal Ge surface using low-temperature migration-enhanced epitaxy H Tanoto, SF Yoon, WK Loke, EA Fitzgerald, C Dohrman, B Narayanan, ... Journal of Vacuum Science & Technology B: Microelectronics and Nanometer …, 2006 | 82 | 2006 |
| Rate Equations for 1.3-m Dots-Under-a-Well and Dots-in-a-Well Self-Assembled InAs–GaAs Quantum-Dot Lasers CZ Tong, SF Yoon, CY Ngo, CY Liu, WK Loke IEEE journal of quantum electronics 42 (11), 1175-1183, 2006 | 78 | 2006 |
| Germanium-tin on Si avalanche photodiode: device design and technology demonstration Y Dong, W Wang, X Xu, X Gong, D Lei, Q Zhou, Z Xu, WK Loke, SF Yoon, ... IEEE Transactions on Electron Devices 62 (1), 128-135, 2014 | 74 | 2014 |
| Floating-base germanium-tin heterojunction phototransistor for high-efficiency photodetection in short-wave infrared range W Wang, Y Dong, SY Lee, WK Loke, D Lei, SF Yoon, G Liang, X Gong, ... Optics express 25 (16), 18502-18507, 2017 | 64 | 2017 |
| Rapid thermal annealing of grown by radio-frequency plasma assisted molecular beam epitaxy and its effect on photoluminescence WK Loke, SF Yoon, SZ Wang, TK Ng, WJ Fan Journal of applied physics 91 (8), 4900-4903, 2002 | 61 | 2002 |
| High-performance GeSn photodetector and fin field-effect transistor (FinFET) on an advanced GeSn-on-insulator platform W Wang, D Lei, YC Huang, KH Lee, WK Loke, Y Dong, S Xu, CS Tan, ... Optics express 26 (8), 10305-10314, 2018 | 56 | 2018 |
| Molecular beam epitaxy grown GaNAsSb 1 eV photovoltaic cell KH Tan, S Wicaksono, WK Loke, D Li, SF Yoon, EAA Fitzgerald, ... Journal of Crystal Growth 335 (1), 66-69, 2011 | 44 | 2011 |
| Germanium-tin multiple quantum well on silicon avalanche photodiode for photodetection at two micron wavelength Y Dong, W Wang, SY Lee, D Lei, X Gong, WK Loke, SF Yoon, G Liang, ... Semiconductor Science and Technology 31 (9), 095001, 2016 | 38 | 2016 |
| Defect-induced trap-assisted tunneling current in GaInNAs grown on GaAs substrate WK Loke, SF Yoon, S Wicaksono, KH Tan, KL Lew Journal of Applied Physics 102 (5), 2007 | 35 | 2007 |
| Degradation of subcells and tunnel junctions during growth of GaInP/Ga (In) As/GaNAsSb/Ge 4‐junction solar cells I García, M Ochoa, I Lombardero, L Cifuentes, M Hinojosa, P Caño, ... Progress in Photovoltaics: Research and Applications 25 (11), 887-895, 2017 | 34 | 2017 |
| High-speed picosecond pulse response GaNAsSb pin photodetectors grown by rf plasma-assisted nitrogen molecular beam epitaxy KH Tan, SF Yoon, WK Loke, S Wicaksono, KL Lew, A Stöhr, O Ecin, ... Applied physics letters 90 (18), 2007 | 34 | 2007 |
| High gain AlGaAs∕ GaAs heterojunction bipolar transistor fabricated on SiGe∕ Si substrate KL Lew, SF Yoon, WK Loke, H Tanoto, CL Dohrman, DM Isaacson, ... Journal of Vacuum Science & Technology B: Microelectronics and Nanometer …, 2007 | 32 | 2007 |
| Determination of nitrogen composition in GaNxas1− x epilayer on GaAs WJ Fan, SF Yoon, WK Cheah, WK Loke, TK Ng, SZ Wang, R Liu, A Wee Journal of crystal growth 268 (3-4), 470-474, 2004 | 32 | 2004 |
| Formation of interfacial misfit dislocation in GaSb/GaAs heteroepitaxy via anion exchange process KH Tan, BW Jia, WK Loke, S Wicaksono, SF Yoon Journal of Crystal Growth 427, 80-86, 2015 | 29 | 2015 |
| Photoluminescence characteristics of GaInNAs quantum wells annealed at high temperature TK Ng, SF Yoon, SZ Wang, WK Loke, WJ Fan Journal of Vacuum Science & Technology B: Microelectronics and Nanometer …, 2002 | 29 | 2002 |
| An investigation of growth temperature on the surface morphology and optical properties of1. 3 µm InAs/InGaAs/GaAs quantum dot structures CY Ngo, SF Yoon, CZ Tong, WK Loke, SJ Chua Nanotechnology 18 (36), 365708, 2007 | 28 | 2007 |
Satrio WicaksonoNational University of SingaporeVerified email at nus.edu.sg
