| 10×10nm2 Hf/HfOx crossbar resistive RAM with excellent performance, reliability and low-energy operation B Govoreanu, GS Kar, YY Chen, V Paraschiv, S Kubicek, A Fantini, ... 2011 International Electron Devices Meeting, 31.6. 1-31.6. 4, 2011 | 977 | 2011 |
| High-k dielectrics for future generation memory devices JA Kittl, K Opsomer, M Popovici, N Menou, B Kaczer, XP Wang, ... Microelectronic engineering 86 (7-9), 1789-1795, 2009 | 341 | 2009 |
| Endurance/Retention Trade-off onCap 1T1R Bipolar RRAM YY Chen, L Goux, S Clima, B Govoreanu, R Degraeve, GS Kar, A Fantini, ... IEEE Transactions on electron devices 60 (3), 1114-1121, 2013 | 320 | 2013 |
| Evidences of oxygen-mediated resistive-switching mechanism in TiN\HfO2\Pt cells L Goux, P Czarnecki, YY Chen, L Pantisano, XP Wang, R Degraeve, ... Applied Physics Letters 97 (24), 2010 | 288 | 2010 |
| Intrinsic switching variability in HfO2RRAM A Fantini, L Goux, R Degraeve, DJ Wouters, N Raghavan, G Kar, ... 2013 5th IEEE International Memory Workshop, 30-33, 2013 | 285 | 2013 |
| VARIOT: A novel multilayer tunnel barrier concept for low-voltage nonvolatile memory devices B Govoreanu, P Blomme, M Rosmeulen, J Van Houdt, K De Meyer IEEE Electron Device Letters 24 (2), 99-101, 2003 | 252 | 2003 |
| Balancing SET/RESET Pulse forEndurance in1T1R Bipolar RRAM YY Chen, B Govoreanu, L Goux, R Degraeve, A Fantini, GS Kar, ... IEEE Transactions on Electron devices 59 (12), 3243-3249, 2012 | 237 | 2012 |
| Te-based chalcogenide materials for selector applications A Velea, K Opsomer, W Devulder, J Dumortier, J Fan, C Detavernier, ... Scientific reports 7 (1), 8103, 2017 | 163 | 2017 |
| Improvement of data retention in HfO2/Hf 1T1R RRAM cell under low operating current YY Chen, M Komura, R Degraeve, B Govoreanu, L Goux, A Fantini, ... 2013 IEEE International Electron Devices Meeting, 10.1. 1-10.1. 4, 2013 | 156 | 2013 |
| Causes and consequences of the stochastic aspect of filamentary RRAM R Degraeve, A Fantini, N Raghavan, L Goux, S Clima, B Govoreanu, ... Microelectronic Engineering 147, 171-175, 2015 | 151 | 2015 |
| Investigation of Microwave Loss Induced by Oxide Regrowth in High-Q Niobium Resonators J Verjauw, A Potočnik, M Mongillo, R Acharya, F Mohiyaddin, G Simion, ... Physical Review Applied 16 (1), 014018, 2021 | 125 | 2021 |
| Trap spectroscopy by charge injection and sensing (TSCIS): A quantitative electrical technique for studying defects in dielectric stacks R Degraeve, M Cho, B Govoreanu, B Kaczer, MB Zahid, J Van Houdt, ... 2008 IEEE International Electron Devices Meeting, 1-4, 2008 | 124 | 2008 |
| Understanding of the endurance failure in scaled HfO2-based 1T1R RRAM through vacancy mobility degradation YY Chen, R Degraeve, S Clima, B Govoreanu, L Goux, A Fantini, GS Kar, ... 2012 International Electron Devices Meeting, 20.3. 1-20.3. 4, 2012 | 122 | 2012 |
| Dynamic ‘hour glass’ model for SET and RESET in HfO2 RRAM R Degraeve, A Fantini, S Clima, B Govoreanu, L Goux, YY Chen, ... 2012 Symposium on VLSI Technology (VLSIT), 75-76, 2012 | 121 | 2012 |
| Vacancy-modulated conductive oxide resistive RAM (VMCO-RRAM): An area-scalable switching current, self-compliant, highly nonlinear and wide on/off-window resistive switching cell B Govoreanu, A Redolfi, L Zhang, C Adelmann, M Popovici, S Clima, ... 2013 IEEE International Electron Devices Meeting, 10.2. 1-10.2. 4, 2013 | 112 | 2013 |
| First-principles simulation of oxygen diffusion in HfOx: Role in the resistive switching mechanism S Clima, YY Chen, R Degraeve, M Mees, K Sankaran, B Govoreanu, ... Applied Physics Letters 100 (13), 2012 | 112 | 2012 |
| Intrinsic switching behavior in HfO2 RRAM by fast electrical measurements on novel 2R test structures A Fantini, DJ Wouters, R Degraeve, L Goux, L Pantisano, G Kar, YY Chen, ... 2012 4th IEEE International Memory Workshop, 1-4, 2012 | 99 | 2012 |
| Scaling down the interpoly dielectric for next generation flash memory: Challenges and opportunities B Govoreanu, DP Brunco, J Van Houdt Solid-State Electronics 49 (11), 1841-1848, 2005 | 98 | 2005 |
| Ultralow sub-500nA operating current high-performance TiN\Al2O3\HfO2\Hf\TiN bipolar RRAM achieved through understanding-based stack-engineering L Goux, A Fantini, G Kar, YY Chen, N Jossart, R Degraeve, S Clima, ... 2012 Symposium on VLSI Technology (VLSIT), 159-160, 2012 | 97 | 2012 |
| Ovonic Threshold‐Switching GexSey Chalcogenide Materials: Stoichiometry, Trap Nature, and Material Relaxation from First Principles S Clima, D Garbin, K Opsomer, NS Avasarala, W Devulder, I Shlyakhov, ... physica status solidi (RRL)–Rapid Research Letters 14 (5), 1900672, 2020 | 88 | 2020 |
Chen Yang Yin 陈杨胤SanDiskVerified email at sandisk.com
