| Direct measurement of adhesion energy of monolayer graphene as-grown on copper and its application to renewable transfer process T Yoon, WC Shin, TY Kim, JH Mun, TS Kim, BJ Cho Nano letters 12 (3), 1448-1452, 2012 | 511 | 2012 |
| Synthesis of ultrathin polymer insulating layers by initiated chemical vapour deposition for low-power soft electronics H Moon, H Seong, WC Shin, WT Park, M Kim, S Lee, JH Bong, YY Noh, ... Nature materials 14 (6), 628-635, 2015 | 309 | 2015 |
| Improvement of graphene–metal contact resistance by introducing edge contacts at graphene under metal S Min Song, T Yong Kim, O Jae Sul, W Cheol Shin, B Jin Cho Applied Physics Letters 104 (18), 2014 | 120 | 2014 |
| Highly air-stable electrical performance of graphene field effect transistors by interface engineering with amorphous fluoropolymer WC Shin, S Seo, BJ Cho Applied Physics Letters 98 (15), 2011 | 56 | 2011 |
| Method for fabricating semiconductor device having a silicide layer BAE Deok-Han, KS Kim, CS Kim, WC Shin, JUN Hwi-Chan US Patent 9,876,094, 2018 | 53 | 2018 |
| Interface engineering for high performance graphene electronic devices DY Jung, SY Yang, H Park, WC Shin, JG Oh, BJ Cho, SY Choi Nano Convergence 2 (1), 11, 2015 | 40 | 2015 |
| Functionalized Graphene as an Ultrathin Seed Layer for the Atomic Layer Deposition of Conformal High-k Dielectrics on Graphene WC Shin, JH Bong, SY Choi, BJ Cho ACS Applied Materials & Interfaces 5 (22), 11515-11519, 2013 | 40 | 2013 |
| Seeding atomic layer deposition of high-k dielectric on graphene with ultrathin poly (4-vinylphenol) layer for enhanced device performance and reliability W Cheol Shin, T Yong Kim, O Sul, B Jin Cho Applied Physics Letters 101 (3), 2012 | 39 | 2012 |
| Low-Voltage High-Performance Pentacene Thin-Film Transistors With Ultrathin PVP/High-HfLaO Hybrid Gate Dielectric WC Shin, H Moon, S Yoo, Y Li, BJ Cho IEEE electron device letters 31 (11), 1308-1310, 2010 | 32 | 2010 |
| Doping suppression and mobility enhancement of graphene transistors fabricated using an adhesion promoting dry transfer process W Cheol Shin, T Yoon, J Hun Mun, T Yong Kim, SY Choi, TS Kim, ... Applied Physics Letters 103 (24), 2013 | 17 | 2013 |
| Graphene electronic devices having multi-layered gate insulating layer H Song, BJ Cho, SA Seo, WC Shin US Patent 8,994,079, 2015 | 15 | 2015 |
| Dirac voltage tunability by Hf1− xLaxO gate dielectric composition modulation for graphene field effect devices J Gun Oh, Y Shin, W Cheol Shin, O Sul, B Jin Cho Applied Physics Letters 99 (19), 2011 | 14 | 2011 |
| Ring oscillator circuit based on ZnO thin-film transistors fabricated by RF magnetron sputtering WC Shin, K Remashan, JH Jang, MS Oh Journal of the Korean Physical Society, 1514-1518, 2009 | 14 | 2009 |
| High pressure deuterium annealing for improved immunity against stress-induced threshold voltage degradation DH Jung, WC Shin, MK Kim, JY Ku, DH Wang, KS Lee, JY Park IEEE Transactions on Device and Materials Reliability 22 (3), 457-461, 2022 | 11 | 2022 |
| Impact of device-to-device interference in nanosheet field-effect transistors KS Lee, WC Shin, JW Yeon, JY Park Microelectronics Reliability 145, 114995, 2023 | 5 | 2023 |
| Understanding of Incremental Step Pulse Programming (ISPP) Slope Degradation in 3D NAND and its Band-Engineered Trap Layer Solution KH Kim, WC Shin, U Do Ji, YK Kim, N Kim, HB Oh, SH Oh, BC Jang 2025 IEEE International Reliability Physics Symposium (IRPS), 1-6, 2025 | 1 | 2025 |
| The structure of the CT formation before PC patterning and the method JH Lee, SC Park, YI Lee, BK Kim, YM Jeon, DW Ha, IC Hwang, WC Shin, ... | | 2018 |
| Adhesion Energy and Etching-Free Renewable Transfer of Graphene As-Grown on Copper T Yoon, WC Shin, TY Kim, JH Mun, BJ Cho, TS Kim ECS Meeting Abstracts, 264, 2012 | | 2012 |
| Seeding ALD of high-k gate dielectric in CVD graphene FETs for enhanced device performance and reliability WC Shin, BJ Cho Graphene Week 2012, 2012 | | 2012 |
| ultrathin poly (4-vinylphenol) layer for enhanced device performance and reliability WC Shin, TY Kim, O Sul, BJ Cho APPLIED PHYSICS LETTERS 101, 033507, 2012 | | 2012 |