| Review of gallium-oxide-based solar-blind ultraviolet photodetectors X Chen, F Ren, S Gu, J Ye Photonics Research 7 (4), 381-415, 2019 | 631 | 2019 |
| Electroluminescent and transport mechanisms of n-ZnO∕ p-Si heterojunctions JD Ye, SL Gu, SM Zhu, W Liu, SM Liu, R Zhang, Y Shi, YD Zheng Applied physics letters 88 (18), 2006 | 306 | 2006 |
| Correlation between green luminescence and morphology evolution of ZnO films JD Ye, SL Gu, F Qin, SM Zhu, SM Liu, X Zhou, W Liu, LQ Hu, R Zhang, ... Applied Physics A 81 (4), 759-762, 2005 | 274 | 2005 |
| A 1.86-kV double-layered NiO/β-Ga2O3 vertical p–n heterojunction diode HH Gong, XH Chen, Y Xu, FF Ren, SL Gu, JD Ye Applied Physics Letters 117 (2), 2020 | 264 | 2020 |
| Solar-Blind Photodetector with High Avalanche Gains and Bias-Tunable Detecting Functionality Based on Metastable Phase α-Ga2O3/ZnO Isotype Heterostructures X Chen, Y Xu, D Zhou, S Yang, F Ren, H Lu, K Tang, S Gu, R Zhang, ... ACS applied materials & interfaces 9 (42), 36997-37005, 2017 | 237 | 2017 |
| Blue-yellow ZnO homostructural light-emitting diode realized by metalorganic chemical vapor deposition technique W Liu, SL Gu, JD Ye, SM Zhu, SM Liu, X Zhou, R Zhang, Y Shi, YD Zheng, ... Applied physics letters 88 (9), 2006 | 215 | 2006 |
| Carbonized bamboos as excellent 3D solar vapor‐generation devices Y Bian, Q Du, K Tang, Y Shen, L Hao, D Zhou, X Wang, Z Xu, H Zhang, ... Advanced Materials Technologies 4 (4), 1800593, 2019 | 213 | 2019 |
| The growth and annealing of single crystalline ZnO films by low-pressure MOCVD J Ye, S Gu, S Zhu, T Chen, L Hu, F Qin, R Zhang, Y Shi, Y Zheng Journal of Crystal Growth 243 (1), 151-156, 2002 | 200 | 2002 |
| An avalanche-and-surge robust ultrawide-bandgap heterojunction for power electronics F Zhou, H Gong, M Xiao, Y Ma, Z Wang, X Yu, L Li, L Fu, HH Tan, Y Yang, ... Nature Communications 14 (1), 4459, 2023 | 174 | 2023 |
| P-type β-Ga2O3 metal-semiconductor-metal solar-blind photodetectors with extremely high responsivity and gain-bandwidth product ZX Jiang, ZY Wu, CC Ma, JN Deng, H Zhang, Y Xu, JD Ye, ZL Fang, ... Materials Today Physics 14, 100226, 2020 | 171 | 2020 |
| 2.41 kV Vertical P-Nio/n-Ga2O3 Heterojunction Diodes With a Record Baliga's Figure-of-Merit of 5.18 GW/cm2 Y Wang, H Gong, Y Lv, X Fu, S Dun, T Han, H Liu, X Zhou, S Liang, J Ye, ... IEEE Transactions on Power Electronics 37 (4), 3743-3746, 2021 | 167 | 2021 |
| Toward emerging gallium oxide semiconductors: A roadmap Y Yuan, W Hao, W Mu, Z Wang, X Chen, Q Liu, G Xu, C Wang, H Zhou, ... Fundamental Research 1 (6), 697-716, 2021 | 159 | 2021 |
| Demonstration of the p-NiOx/n-Ga2O3 Heterojunction Gate FETs and Diodes With BV2/Ron,sp Figures of Merit of 0.39 GW/cm2 and 1.38 GW/cm2 C Wang, H Gong, W Lei, Y Cai, Z Hu, S Xu, Z Liu, Q Feng, H Zhou, J Ye, ... IEEE Electron Device Letters 42 (4), 485-488, 2021 | 151 | 2021 |
| β-Ga2O3 hetero-junction barrier Schottky diode with reverse leakage current modulation and BV2/Ron, sp value of 0.93 GW/cm2 Q Yan, H Gong, J Zhang, J Ye, H Zhou, Z Liu, S Xu, C Wang, Z Hu, ... Applied Physics Letters 118 (12), 2021 | 149 | 2021 |
| Fermi-level band filling and band-gap renormalization in Ga-doped ZnO JD Ye, SL Gu, SM Zhu, SM Liu, YD Zheng, R Zhang, Y Shi Applied Physics Letters 86 (19), 2005 | 147 | 2005 |
| β-Ga2O3 vertical heterojunction barrier Schottky diodes terminated with p-NiO field limiting rings HH Gong, XX Yu, Y Xu, XH Chen, Y Kuang, YJ Lv, Y Yang, FF Ren, ... Applied Physics Letters 118 (20), 2021 | 144 | 2021 |
| Deep-level defects in gallium oxide Z Wang, X Chen, FF Ren, S Gu, J Ye Journal of Physics D: Applied Physics 54 (4), 043002, 2020 | 142 | 2020 |
| 1.37 kV/12 A NiO/β-Ga2O3 Heterojunction Diode With Nanosecond Reverse Recovery and Rugged Surge-Current Capability H Gong, F Zhou, W Xu, X Yu, Y Xu, Y Yang, F Ren, S Gu, Y Zheng, ... IEEE Transactions on Power Electronics 36 (11), 12213-12217, 2021 | 141 | 2021 |
| Band Alignment and Interface Recombination in NiO/β-Ga2O3 Type-II p-n Heterojunctions H Gong, X Chen, Y Xu, Y Chen, F Ren, B Liu, S Gu, R Zhang, J Ye IEEE Transactions on Electron Devices 67 (8), 3341-3347, 2020 | 138 | 2020 |
| Gallium oxide-based solar-blind ultraviolet photodetectors X Chen, FF Ren, J Ye, S Gu Semiconductor science and technology 35 (2), 023001, 2020 | 132 | 2020 |
Fang-Fang RENEME, RSPE, The Australian National UniversityVerified email at anu.edu.au
