| Tantalum pentoxide (Ta2O5) thin films for advanced dielectric applications C Chaneliere, JL Autran, RAB Devine, B Balland Materials Science and Engineering: R: Reports 22 (6), 269-322, 1998 | 933 | 1998 |
| Modeling and simulation of single-event effects in digital devices and ICs D Munteanu, JL Autran IEEE Transactions on Nuclear science 55 (4), 1854-1878, 2008 | 228 | 2008 |
| Technology downscaling worsening radiation effects in bulk: SOI to the rescue P Roche, JL Autran, G Gasiot, D Munteanu 2013 IEEE International Electron Devices Meeting, 31.1. 1-31.1. 4, 2013 | 158 | 2013 |
| Properties of amorphous and crystalline thin films deposited on Si from a precursor C Chaneliere, S Four, JL Autran, RAB Devine, NP Sandler Journal of applied physics 83 (9), 4823-4829, 1998 | 155 | 1998 |
| Influence of band-structure on electron ballistic transport in silicon nanowire MOSFET's: an atomistic study K Nehari, N Cavassilas, JL Autran, M Bescond, D Munteanu, M Lannoo Proceedings of 35th European Solid-State Device Research Conference, 2005 …, 2005 | 146 | 2005 |
| 75 nm damascene metal gate and high-k integration for advanced CMOS devices B Guillaumot, X Garros, F Lime, K Oshima, B Tavel, JA Chroboczek, ... Digest. International Electron Devices Meeting,, 355-358, 2002 | 130 | 2002 |
| On the tunneling component of charge pumping current in ultrathin gate oxide MOSFETs P Masson, JL Autran, J Brini IEEE Electron Device Letters 20 (2), 92-94, 2002 | 116 | 2002 |
| Quantum short-channel compact modelling of drain-current in double-gate MOSFET D Munteanu, JL Autran, X Loussier, S Harrison, R Cerutti, T Skotnicki Solid-State Electronics 50 (4), 680-686, 2006 | 111 | 2006 |
| Two-dimensional modeling of quantum ballistic transport in ultimate double-gate SOI devices D Munteanu, JL Autran Solid-State Electronics 47 (7), 1219-1225, 2003 | 111 | 2003 |
| Soft Errors: from particles to circuits JL Autran, D Munteanu CRC press, 2017 | 110 | 2017 |
| Single event upset and multiple cell upset modeling in commercial bulk 65-nm CMOS SRAMs and flip-flops S Uznanski, G Gasiot, P Roche, C Tavernier, JL Autran IEEE Transactions on Nuclear Science 57 (4), 1876-1883, 2010 | 107 | 2010 |
| Heavy ion testing and 3D simulations of Multiple Cell Upset in 65nm standard SRAMs D Giot, P Roche, G Gasiot, JL Autran, R Harboe-Sorensen 2007 9th European Conference on Radiation and Its Effects on Components and …, 2007 | 105 | 2007 |
| Interfacial hardness enhancement in deuterium annealed 0.25 μm channel metal oxide semiconductor transistors RAB Devine, JL Autran, WL Warren, KL Vanheusdan, JC Rostaing Applied Physics Letters 70 (22), 2999-3001, 1997 | 104 | 1997 |
| Frequency characterization and modeling of interface traps in gate dielectric stack from a capacitance point-of-view P Masson, JL Autran, M Houssa, X Garros, C Leroux Applied Physics Letters 81 (18), 3392-3394, 2002 | 97 | 2002 |
| Strained FDSOI CMOS technology scalability down to 2.5nm film thickness and 18nm gate length with a TiN/HfO2gate stack V Barral, T Poiroux, F Andrieu, C Buj-Dufournet, O Faynot, T Ernst, ... 2007 IEEE International Electron Devices Meeting, 61-64, 2007 | 96 | 2007 |
| Conduction mechanisms in and stacked structures on Si C Chaneliere, JL Autran, RAB Devine Journal of applied physics 86 (1), 480-486, 1999 | 95 | 1999 |
| Electrical properties of Ta2O5 films obtained by plasma enhanced chemical vapor deposition using a TaF5 source RAB Devine, L Vallier, JL Autran, P Paillet, JL Leray Applied physics letters 68 (13), 1775-1777, 1996 | 90 | 1996 |
| Fabrication and characterization of Si-MOSFET's with PECVD amorphous Ta2O5 gate insulator JL Autran, R Devine, C Chaneliere, B Balland IEEE Electron device letters 18 (9), 447-449, 1997 | 89 | 1997 |
| Model for interface defect and positive charge generation in ultrathin gate dielectric stacks M Houssa, JL Autran, A Stesmans, MM Heyns Applied physics letters 81 (4), 709-711, 2002 | 85 | 2002 |
| 3D quantum modeling and simulation of multiple-gate nanowire MOSFETs M Bescond, K Nehari, JL Autran, N Cavassilas, D Munteanu, M Lannoo IEDM Technical Digest. IEEE International Electron Devices Meeting, 2004 …, 2004 | 83 | 2004 |
Daniela MunteanuCNRS Senior Researcher (DR), IPR-RennesVerified email at univ-rennes.fr
