| Room-temperature short-wavelength infrared Si photodetector Y Berencén, S Prucnal, F Liu, I Skorupa, R Hübner, L Rebohle, S Zhou, ... Scientific reports 7 (1), 43688, 2017 | 132 | 2017 |
| Engineering telecom single-photon emitters in silicon for scalable quantum photonics M Hollenbach, Y Berencén, U Kentsch, M Helm, GV Astakhov Optics Express 28 (18), 26111-26121, 2020 | 103 | 2020 |
| Wafer-scale nanofabrication of telecom single-photon emitters in silicon M Hollenbach, N Klingner, NS Jagtap, L Bischoff, C Fowley, U Kentsch, ... Nature Communications 13 (1), 1-7, 2022 | 98 | 2022 |
| Ultra-doped n-type germanium thin films for sensing in the mid-infrared S Prucnal, F Liu, M Voelskow, L Vines, L Rebohle, D Lang, Y Berencén, ... Scientific Reports 6 (27643), 2016 | 96 | 2016 |
| Current transport and electroluminescence mechanisms in thin SiO films containing Si nanocluster-sensitized erbium ions O Jambois, Y Berencén, K Hijazi, M Wojdak, AJ Kenyon, F Gourbilleau, ... Journal of Applied Physics 106, 063526, 2009 | 91 | 2009 |
| Extended Infrared Photoresponse in -Hyperdoped at Room Temperature M Wang, Y Berencén, E García-Hemme, S Prucnal, R Hübner, Y Yuan, ... Physical Review Applied 10 (2), 024054, 2018 | 84 | 2018 |
| Breaking the doping limit in silicon by deep impurities M Wang, A Debernardi, Y Berencen, R Heller, C Xu, Y Yuan, Y Xie, ... Physical Review Applied 11 (5), 054039, 2019 | 79 | 2019 |
| Structural and optical properties of pulsed-laser deposited crystalline β-Ga2O3 thin films on silicon Y Berencén, Y Xie, M Wang, S Prucnal, L Rebohle, S Zhou Semiconductor Science and Technology, 2019 | 64 | 2019 |
| Silicon‐Based Intermediate‐Band Infrared Photodetector Realized by Te Hyperdoping M Wang, E García‐Hemme, Y Berencén, R Hübner, Y Xie, L Rebohle, ... Advanced Optical Materials 9 (4), 2001546, 2021 | 61 | 2021 |
| Irradiation effects on the structural and optical properties of single crystal β-Ga2O3 C Liu, Y Berencén, J Yang, Y Wei, M Wang, Y Yuan, C Xu, Y Xie, X Li, ... Semiconductor Science and Technology 33 (9), 095022, 2018 | 55 | 2018 |
| Erbium emission in MOS light emitting devices: from energy transfer to direct impact excitation JM Ramírez, F Ferrarese Lupi, O Jambois, Y Berencén, D Navarro-Urrios, ... Nanotechnology 23 (12), 125203, 2012 | 51 | 2012 |
| Local vibrational modes of Si vacancy spin qubits in SiC Z Shang, A Hashemi, Y Berencén, HP Komsa, P Erhart, S Zhou, M Helm, ... Physical Review B 101 (14), 144109, 2020 | 49 | 2020 |
| Toward a 1.54 m Electrically Driven Erbium-Doped Silicon Slot Waveguide and Optical Amplifier A Tengattini, D Gandolfi, N Prtljaga, A Anopchenko, JM Ramírez, FF Lupi, ... Lightwave Technology, Journal of 31 (3), 391-397, 2013 | 47 | 2013 |
| Electroluminescence efficiencies of erbium in silicon-based hosts S Cueff, JM Ramírez, A Kurvits, Y Berencén, R Zia, B Garrido, R Rizk, ... Applied Physics Letters 103, 191109-191115, 2013 | 44 | 2013 |
| Charge transport and electroluminescence of silicon nanocrystals/SiO2 superlattices J López-Vidrier, Y Berencén, S Hernández, O Blázquez, S Gutsch, ... Journal of Applied Physics 114, 163701, 2013 | 42 | 2013 |
| Intense green-yellow electroluminescence from Tb+-implanted silicon-rich silicon nitride/oxide light emitting devices Y Berencén, R Wutzler, L Rebohle, D Hiller, JM Ramírez, JA Rodríguez, ... Applied Physics Letters 103 (11), 111102-111104, 2013 | 39 | 2013 |
| Er-doped light emitting slot waveguides monolithically integrated in a silicon photonic chip JM Ramírez, F Ferrarese Lupi, Y Berencén, A Anopchenko, JP Colonna, ... Nanotechnology 24 (11), 115202, 2013 | 39 | 2013 |
| Correlation between charge transport and electroluminescence properties of Si-rich oxide/nitride/oxide-based light emitting capacitors Y Berencén, JM Ramírez, O Jambois, C Domínguez, JA Rodríguez, ... Journal of Applied Physics 112 (3), 2012 | 33 | 2012 |
| Metal-nitride-oxide-semiconductor light-emitting devices for general lighting Y Berencén, J Carreras, O Jambois, JM Ramírez, JA Rodríguez, ... Optics Express 19 (S3), A234-A244, 2011 | 32 | 2011 |
| Carrier transport and electroluminescence efficiency of erbium-doped silicon nanocrystal superlattices JM Ramírez, Y Berencén, L López-Conesa, JM Rebled, F Peiró, B Garrido Applied Physics Letters 103 (8), 081102-081105, 2013 | 31 | 2013 |
Manfred HelmInstitute Director at Helmholtz-Zentrum Dresden-Rossendorf, and Professor of Physics, TU DresdenVerified email at hzdr.de
