| Influence of average size and interface passivation on the spectral emission of Si nanocrystals embedded in B Garrido Fernández, M Lopez, C Garcıa, A Pérez-Rodrıguez, JR Morante, ... Journal of Applied Physics 91 (2), 798-807, 2002 | 403 | 2002 |
| Ostwald ripening of end-of-range defects in silicon C Bonafos, D Mathiot, A Claverie Journal of Applied Physics 83 (6), 3008-3017, 1998 | 229 | 1998 |
| Extended defects in shallow implants A Claverie, B Colombeau, B De Mauduit, C Bonafos, X Hebras, ... Applied Physics A 76 (7), 1025-1033, 2003 | 193 | 2003 |
| Elucidation of the surface passivation role on the photoluminescence emission yield of silicon nanocrystals embedded in M López, B Garrido, C Garcıa, P Pellegrino, A Pérez-Rodrıguez, ... Applied Physics Letters 80 (9), 1637-1639, 2002 | 170 | 2002 |
| Effect of annealing environment on the memory properties of thin oxides with embedded Si nanocrystals obtained by low-energy ion-beam synthesis P Normand, E Kapetanakis, P Dimitrakis, D Tsoukalas, K Beltsios, ... Applied Physics Letters 83 (1), 168-170, 2003 | 148 | 2003 |
| Manipulation of two-dimensional arrays of Si nanocrystals embedded in thin layers by low energy ion implantation C Bonafos, M Carrada, N Cherkashin, H Coffin, D Chassaing, ... Journal of applied physics 95 (10), 5696-5702, 2004 | 147 | 2004 |
| Stress measurements of germanium nanocrystals embedded in silicon oxide A Wellner, V Paillard, C Bonafos, H Coffin, A Claverie, B Schmidt, ... Journal of Applied Physics 94 (9), 5639-5642, 2003 | 140 | 2003 |
| Correlation between structural and optical properties of Si nanocrystals embedded in The mechanism of visible light emission B Garrido, M Lopez, O Gonzalez, A Pérez-Rodrıguez, JR Morante, ... Applied Physics Letters 77 (20), 3143-3145, 2000 | 135 | 2000 |
| White luminescence from and ion-implanted films A Pérez-Rodrıguez, O González-Varona, B Garrido, P Pellegrino, ... Journal of Applied Physics 94 (1), 254-262, 2003 | 111 | 2003 |
| Silicon nanocrystal memory devices obtained by ultra-low-energy ion-beam synthesis P Dimitrakis, E Kapetanakis, D Tsoukalas, D Skarlatos, C Bonafos, ... Solid-State Electronics 48 (9), 1511-1517, 2004 | 110 | 2004 |
| Kinetic study of group IV nanoparticles ion beam synthesized in SiO2 C Bonafos, B Colombeau, A Altibelli, M Carrada, GB Assayag, B Garrido, ... Nuclear Instruments and Methods in Physics Research Section B: Beam …, 2001 | 105 | 2001 |
| Imaging Si nanoparticles embedded in SiO2 layers by (S) TEM-EELS S Schamm, C Bonafos, H Coffin, N Cherkashin, M Carrada, GB Assayag, ... Ultramicroscopy 108 (4), 346-357, 2008 | 103 | 2008 |
| Phosphorus doping of ultra-small silicon nanocrystals M Perego, C Bonafos, M Fanciulli Nanotechnology 21 (2), 025602, 2009 | 96 | 2009 |
| Optical and electrical properties of Si-nanocrystals ion beam synthesized in SiO2 B Garrido, M Lopez, A Pérez-Rodrıguez, C Garcıa, P Pellegrino, R Ferré, ... Nuclear Instruments and Methods in Physics Research Section B: Beam …, 2004 | 88 | 2004 |
| Thermal evolution of extended defects in implanted Si:: impact on dopant diffusion A Claverie, B Colombeau, GB Assayag, C Bonafos, F Cristiano, M Omri, ... Materials Science in Semiconductor Processing 3 (4), 269-277, 2000 | 85 | 2000 |
| Optical properties of silicon nanocrystal LEDs J De La Torre, A Souifi, A Poncet, C Busseret, M Lemiti, G Bremond, ... Physica E: Low-dimensional Systems and Nanostructures 16 (3-4), 326-330, 2003 | 81 | 2003 |
| Transient enhanced diffusion of boron in presence of end-of-range defects C Bonafos, M Omri, B De Mauduit, G BenAssayag, A Claverie, D Alquier, ... Journal of applied physics 82 (6), 2855-2861, 1997 | 73 | 1997 |
| Plasmon-resonant Raman spectroscopy in metallic nanoparticles: Surface-enhanced scattering by electronic excitations R Carles, M Bayle, P Benzo, G Benassayag, C Bonafos, G Cacciato, ... Physical Review B: Condensed Matter and Materials Physics (1998-2015) 92 (17 …, 2015 | 72 | 2015 |
| Nanocrystals manufacturing by ultra-low-energy ion-beam-synthesis for non-volatile memory applications P Normand, E Kapetanakis, P Dimitrakis, D Skarlatos, K Beltsios, ... Nuclear Instruments and Methods in Physics Research Section B: Beam …, 2004 | 70 | 2004 |
| On the relation between dopant anomalous diffusion in Si and end-of-range defects A Claverie, L Laânab, C Bonafos, C Bergaud, A Martinez, D Mathiot Nuclear Instruments and Methods in Physics Research Section B: Beam …, 1995 | 68 | 1995 |
