| Midinfrared plasmon-enhanced spectroscopy with germanium antennas on silicon substrates L Baldassarre, E Sakat, J Frigerio, A Samarelli, K Gallacher, E Calandrini, ... Nano letters 15 (11), 7225-7231, 2015 | 239 | 2015 |
| Ohmic contacts to n-type germanium with low specific contact resistivity K Gallacher, P Velha, DJ Paul, I MacLaren, M Myronov, DR Leadley Applied Physics Letters 100 (2), 2012 | 130 | 2012 |
| Ge-on-Si single-photon avalanche diode detectors: design, modeling, fabrication, and characterization at wavelengths 1310 and 1550 nm RE Warburton, G Intermite, M Myronov, P Allred, DR Leadley, K Gallacher, ... IEEE Transactions on Electron Devices 60 (11), 3807-3813, 2013 | 120 | 2013 |
| Tunability of the dielectric function of heavily doped germanium thin films for mid-infrared plasmonics J Frigerio, A Ballabio, G Isella, E Sakat, G Pellegrini, P Biagioni, M Bollani, ... Physical Review B 94 (8), 2016 | 117 | 2016 |
| Low loss Ge-on-Si waveguides operating in the 8–14 µm atmospheric transmission window K Gallacher, RW Millar, U Griškevičiūte, L Baldassarre, M Sorel, ... Optics express 26 (20), 25667-25675, 2018 | 80 | 2018 |
| Micro-fabricated components for cold atom sensors JP McGilligan, K Gallacher, PF Griffin, DJ Paul, AS Arnold, E Riis Review of Scientific Instruments 93 (9), 2022 | 66 | 2022 |
| Silicon nitride waveguide polarization rotator and polarization beam splitter for chip-scale atomic systems K Gallacher, PF Griffin, E Riis, M Sorel, DJ Paul Apl Photonics 7 (4), 2022 | 63 | 2022 |
| Analysis of Ge micro-cavities with in-plane tensile strains above 2% RW Millar, K Gallacher, J Frigerio, A Ballabio, A Bashir, I MacLaren, ... Optics Express 24 (5), 4365-4374, 2016 | 59 | 2016 |
| Plasmonic mid-infrared third harmonic generation in germanium nanoantennas MP Fischer, A Riede, K Gallacher, J Frigerio, G Pellegrini, M Ortolani, ... Light: Science & Applications 7 (1), 106, 2018 | 54 | 2018 |
| 1.4 million Q factor Si3N4 micro-ring resonator at 780 nm wavelength for chip-scale atomic systems M Sinclair, K Gallacher, M Sorel, JC Bayley, E McBrearty, RW Millar, ... Optics express 28 (3), 4010-4020, 2020 | 50 | 2020 |
| Mid-infrared light emission > 3 µm wavelength from tensile strained GeSn microdisks RW Millar, DCS Dumas, KF Gallacher, P Jahandar, C MacGregor, ... Optics express 25 (21), 25374-25385, 2017 | 50 | 2017 |
| Benchmarking the use of heavily doped Ge for plasmonics and sensing in the mid-infrared G Pellegrini, L Baldassare, V Giliberti, J Frigerio, K Gallacher, DJ Paul, ... Acs Photonics 5 (9), 3601-3607, 2018 | 47 | 2018 |
| Optical properties of highly n-doped germanium obtained by in situ doping and laser annealing J Frigerio, A Ballabio, K Gallacher, V Giliberti, L Baldassarre, R Millar, ... Journal of Physics D: Applied Physics 50 (46), 465103, 2017 | 44 | 2017 |
| Ge/SiGe quantum confined Stark effect electro-absorption modulation with low voltage swing at λ = 1550 nm DCS Dumas, K Gallacher, S Rhead, M Myronov, DR Leadley, DJ Paul Optics express 22 (16), 19284-19292, 2014 | 41 | 2014 |
| Group-IV midinfrared plasmonics P Biagioni, J Frigerio, A Samarelli, K Gallacher, L Baldassarre, E Sakat, ... Journal of Nanophotonics 9 (1), 093789-093789, 2015 | 37 | 2015 |
| Extending the emission wavelength of Ge nanopillars to 2.25 μm using silicon nitride stressors RW Millar, K Gallacher, A Samarelli, J Frigerio, D Chrastina, G Isella, ... Optics express 23 (14), 18193-18202, 2015 | 35 | 2015 |
| Disentangling nonradiative recombination processes in Ge micro-crystals on Si substrates F Pezzoli, A Giorgioni, K Gallacher, F Isa, P Biagioni, RW Millar, E Gatti, ... Applied Physics Letters 108 (26), 2016 | 31 | 2016 |
| Ultra-broadband mid-infrared Ge-on-Si waveguide polarization rotator K Gallacher, RW Millar, U Griškevičiūtė, M Sinclair, M Sorel, ... APL Photonics 5 (2), 2020 | 30 | 2020 |
| Mid-infrared intersubband absorption from p-Ge quantum wells grown on Si substrates K Gallacher, A Ballabio, RW Millar, J Frigerio, A Bashir, I MacLaren, ... Applied Physics Letters 108 (9), 2016 | 29 | 2016 |
| 1.55 μm direct bandgap electroluminescence from strained n-Ge quantum wells grown on Si substrates K Gallacher, P Velha, DJ Paul, S Cecchi, J Frigerio, D Chrastina, G Isella Applied Physics Letters 101 (21), 2012 | 29 | 2012 |
Douglas J PaulRoyal Academy of Engineering Chair in Emerging Technologies, University of GlasgowVerified email at glasgow.ac.uk
