| The LHCb detector at the LHC AA Alves Jr, LM Andrade Filho, AF Barbosa, I Bediaga, G Cernicchiaro, ... Journal of instrumentation 3 (08), S08005, 2008 | 4987 | 2008 |
| A 65-nm reliable 6T CMOS SRAM cell with minimum size transistors G Torrens, B Alorda, C Carmona, D Malagon-Perianez, J Segura, S Bota IEEE Transactions on Emerging Topics in Computing 7 (3), 447-455, 2017 | 53 | 2017 |
| Analytical modeling of single event transients propagation in combinational logic gates X Gili, S Barcelo, J Segura IEEE Transactions on Nuclear Science 59 (4), 971-979, 2012 | 39 | 2012 |
| Impact of thermal gradients on clock skew and testing SA Bota, JL Rossello, C De Benito, A Keshavarzi, J Segura IEEE Design & Test of Computers 23 (5), 414-424, 2006 | 38 | 2006 |
| A reusable smart interface for gas sensor resistance measurement JL Merino, SA Bota, R Casanova, A Diéguez, C Cané, J Samitier IEEE Transactions on Instrumentation and Measurement 53 (4), 1173-1178, 2004 | 37 | 2004 |
| 8T vs. 6T SRAM cell radiation robustness: A comparative analysis B Alorda, G Torrens, S Bota, J Segura Microelectronics reliability 51 (2), 350-359, 2011 | 34 | 2011 |
| A current-mode interface circuit for a piezoresistive pressure sensor J Samitier, M Puig-Vidal, SA Bota, C Rubio, SK Siskos, T Laopoulos IEEE Transactions on Instrumentation and Measurement 47 (3), 708-710, 1998 | 34 | 1998 |
| Adaptive static and dynamic noise margin improvement in minimum-sized 6T-SRAM cells B Alorda, G Torrens, S Bota, J Segura Microelectronics Reliability 54 (11), 2613-2620, 2014 | 31 | 2014 |
| Reconstruction of the SiO2 structure damaged by low-energy Ar-implanted ions B Garrido, J Samitier, S Bota, JA Moreno, J Montserrat, JR Morante Journal of applied physics 81 (1), 126-134, 1997 | 30 | 1997 |
| Structural damage and defects created in SiO2 films by Ar ion implantation B Garrido, J Samitier, S Bota, C Dominguez, J Montserrat, JR Morante Journal of non-crystalline solids 187, 101-105, 1995 | 30 | 1995 |
| Soft error rate comparison of 6T and 8T SRAM ICs using mono-energetic proton and neutron irradiation sources D Malagón, SA Bota, G Torrens, X Gili, J Praena, B Fernández, M Macías, ... Microelectronics Reliability 78, 38-45, 2017 | 28 | 2017 |
| Smart temperature sensor for thermal testing of cell-based ICs SA Bota, M Rosales, JL Rosselló, J Segura Design, Automation and Test in Europe, 464-465, 2005 | 28 | 2005 |
| A compact temperature sensor for a 1.0 μm CMOS technology using lateral pnp transistors E Montané, SA Bota, J Samitier Microelectronics journal 29 (4-5), 277-281, 1998 | 28 | 1998 |
| Static and dynamic stability improvement strategies for 6T CMOS low-power SRAMs B Alorda, G Torrens, S Bota, J Segura 2010 Design, Automation & Test in Europe Conference & Exhibition (DATE 2010 …, 2010 | 27 | 2010 |
| A simple CMOS chaotic integrated circuit JL Rosselló, V Canals, I De Paul, S Bota, A Morro IEICE Electronics Express 5 (24), 1042-1048, 2008 | 27 | 2008 |
| A 128/spl times/128 CMOS image sensor with analog memory for synchronous image capture G Chapinal, SA Bota, M Moreno, J Palacin, A Herms IEEE Sensors Journal 2 (2), 120-127, 2002 | 27 | 2002 |
| Design hardening of nanometer SRAMs through transistor width modulation and multi-Vt combination G Torrens, B Alorda, S Barceló, JL Rosselló, SA Bota, J Segura IEEE Transactions on Circuits and Systems II: Express Briefs 57 (4), 280-284, 2010 | 24 | 2010 |
| Within die thermal gradient impact on clock-skew: A new type of delay-fault mechanism SA Bota, M Rosales, JL Rosello, A Keshavarzi, J Segura 2004 International Conferce on Test, 1276-1283, 2004 | 24 | 2004 |
| An experimental approach to accurate alpha-SER modeling and optimization through design parameters in 6T SRAM cells for deep-nanometer CMOS G Torrens, SA Bota, B Alorda, J Segura IEEE Transactions on Device and Materials Reliability 14 (4), 1013-1021, 2014 | 23 | 2014 |
| CMOS–MEMS VOC sensors functionalized via inkjet polymer deposition for high-sensitivity acetone detection R Perelló-Roig, J Verd, S Bota, B Soberats, A Costa, J Segura Lab on a Chip 21 (17), 3307-3315, 2021 | 22 | 2021 |
