| GaP-nucleation on exact Si (0 0 1) substrates for III/V device integration K Volz, A Beyer, W Witte, J Ohlmann, I Németh, B Kunert, W Stolz Journal of Crystal Growth 315 (1), 37-47, 2011 | 427 | 2011 |
| (Ga, In)(N, As)-fine structure of the band gap due to nearest-neighbor configurations of the isovalent nitrogen PJ Klar, H Grüning, J Koch, S Schäfer, K Volz, W Stolz, W Heimbrodt, ... Physical Review B 64 (12), 121203, 2001 | 264 | 2001 |
| Heteroepitaxy of GaP on Si: Correlation of morphology, anti-phase-domain structure and MOVPE growth conditions I Németh, B Kunert, W Stolz, K Volz Journal of Crystal Growth 310 (7-9), 1595-1601, 2008 | 216 | 2008 |
| Chemo-mechanical failure mechanisms of the silicon anode in solid-state batteries H Huo, M Jiang, Y Bai, S Ahmed, K Volz, H Hartmann, A Henss, CV Singh, ... Nature materials 23 (4), 543-551, 2024 | 199 | 2024 |
| Electrical injection Ga (AsBi)/(AlGa) As single quantum well laser P Ludewig, N Knaub, N Hossain, S Reinhard, L Nattermann, IP Marko, ... Applied Physics Letters 102 (24), 2013 | 193 | 2013 |
| Laser operation of Ga (NAsP) lattice-matched to (001) silicon substrate S Liebich, M Zimprich, A Beyer, C Lange, DJ Franzbach, S Chatterjee, ... Applied Physics Letters 99 (7), 2011 | 182 | 2011 |
| Si (001) surface preparation for the antiphase domain free heteroepitaxial growth of GaP on Si substrate B Kunert, I Németh, S Reinhard, K Volz, W Stolz Thin Solid Films 517 (1), 140-143, 2008 | 178 | 2008 |
| A highly efficient directional molecular white-light emitter driven by a continuous-wave laser diode NW Rosemann, JP Eußner, A Beyer, SW Koch, K Volz, S Dehnen, ... Science 352 (6291), 1301-1304, 2016 | 172 | 2016 |
| Direct-band-gap Ga (NAsP)-material system pseudomorphically grown on GaP substrate B Kunert, K Volz, J Koch, W Stolz Applied Physics Letters 88 (18), 2006 | 144 | 2006 |
| Interaction between conduction band edge and nitrogen states probed by carrier effective-mass measurements in F Masia, G Pettinari, A Polimeni, M Felici, A Miriametro, M Capizzi, ... Physical Review B—Condensed Matter and Materials Physics 73 (7), 073201, 2006 | 142 | 2006 |
| Ion implantation in GaN at liquid-nitrogen temperature: Structural characteristics and amorphization C Liu, B Mensching, M Zeitler, K Volz, B Rauschenbach Physical Review B 57 (4), 2530, 1998 | 137 | 1998 |
| Comparison of direct growth and wafer bonding for the fabrication of GaInP/GaAs dual-junction solar cells on silicon F Dimroth, T Roesener, S Essig, C Weuffen, A Wekkeli, E Oliva, G Siefer, ... IEEE Journal of Photovoltaics 4 (2), 620-625, 2014 | 135 | 2014 |
| The Role of Intragranular Nanopores in Capacity Fade of Nickel-Rich Layered Li(Ni1–x–yCoxMny)O2 Cathode Materials S Ahmed, A Pokle, S Schweidler, A Beyer, M Bianchini, F Walther, ... ACS nano 13 (9), 10694-10704, 2019 | 126 | 2019 |
| Quantitative description of disorder parameters in (GaIn)(NAs) quantum wells from the temperature-dependent photoluminescence spectroscopy O Rubel, M Galluppi, SD Baranovskii, K Volz, L Geelhaar, H Riechert, ... Journal of applied physics 98 (6), 2005 | 124 | 2005 |
| Lattice expansion of Ca and Ar ion implanted GaN C Liu, B Mensching, K Volz, B Rauschenbach Applied physics letters 71 (16), 2313-2315, 1997 | 121 | 1997 |
| GaP heteroepitaxy on Si (001): Correlation of Si-surface structure, GaP growth conditions, and Si-III/V interface structure A Beyer, J Ohlmann, S Liebich, H Heim, G Witte, W Stolz, K Volz Journal of Applied Physics 111 (8), 2012 | 116 | 2012 |
| Monitoring the thermally induced transition from sp3-hybridized into sp2-hybridized carbons DB Schüpfer, F Badaczewski, J Peilstöcker, JM Guerra-Castro, H Shim, ... Carbon 172, 214-227, 2021 | 110 | 2021 |
| The role of Sb in the MBE growth of (GaIn)(NAsSb) K Volz, V Gambin, W Ha, MA Wistey, H Yuen, S Bank, JS Harris Journal of Crystal Growth 251 (1-4), 360-366, 2003 | 109 | 2003 |
| Investigation of fluorine and nitrogen as anionic dopants in nickel-rich cathode materials for lithium-ion batteries JO Binder, SP Culver, R Pinedo, DA Weber, MS Friedrich, KI Gries, K Volz, ... ACS Applied Materials & Interfaces 10 (51), 44452-44462, 2018 | 107 | 2018 |
| Bipolar Electric-Field Enhanced Trapping and Detrapping of Mobile Donors in BiFeO3 Memristors T You, N Du, S Slesazeck, T Mikolajick, G Li, D Bürger, I Skorupa, ... ACS applied materials & interfaces 6 (22), 19758-19765, 2014 | 107 | 2014 |
