| Fabrication of tapered, conical-shaped titania nanotubes GK Mor, OK Varghese, M Paulose, N Mukherjee, CA Grimes Journal of Materials Research 18 (11), 2588-2593, 2003 | 735 | 2003 |
| Methods of forming nickel sulfide film on a semiconductor device SB Clendenning, N Mukherjee, R Pillarisetty US Patent 7,964,490, 2011 | 504 | 2011 |
| Fabrication, characterization, and physics of III–V heterojunction tunneling field effect transistors (H-TFET) for steep sub-threshold swing G Dewey, B Chu-Kung, J Boardman, JM Fastenau, J Kavalieros, R Kotlyar, ... 2011 International electron devices meeting, 33.6. 1-33.6. 4, 2011 | 471 | 2011 |
| Advanced high-K gate dielectric for high-performance short-channel In0.7Ga0.3As quantum well field effect transistors on silicon substrate for low power logic … M Radosavljevic, B Chu-Kung, S Corcoran, G Dewey, MK Hudait, ... 2009 IEEE International Electron Devices Meeting (IEDM), 1-4, 2009 | 305 | 2009 |
| CMOS implementation of germanium and III-V nanowires and nanoribbons in gate-all-around architecture M Radosavljevic, R Pillarisetty, G Dewey, N Mukherjee, J Kavalieros, ... US Patent 9,123,567, 2015 | 222 | 2015 |
| Electrostatics improvement in 3-D tri-gate over ultra-thin body planar InGaAs quantum well field effect transistors with high-K gate dielectric and scaled gate-to-drain/gate-to … M Radosavljevic, G Dewey, D Basu, J Boardman, B Chu-Kung, ... 2011 international electron devices meeting, 33.1. 1-33.1. 4, 2011 | 206 | 2011 |
| High mobility strained germanium quantum well field effect transistor as the p-channel device option for low power (Vcc= 0.5 V) III–V CMOS architecture R Pillarisetty, B Chu-Kung, S Corcoran, G Dewey, J Kavalieros, H Kennel, ... 2010 International Electron Devices Meeting, 6.7. 1-6.7. 4, 2010 | 175 | 2010 |
| Fabrication of nanoporous tungsten oxide by galvanostatic anodization N Mukherjee, M Paulose, OK Varghese, GK Mor, CA Grimes Journal of materials research 18 (10), 2296-2299, 2003 | 167 | 2003 |
| Metal-insulator-semiconductor tunneling contacts having an insulative layer disposed between source/drain contacts and source/drain regions N Mukherjee, G Dewey, MV Metz, J Kavalieros, RS Chau US Patent 8,110,877, 2012 | 166* | 2012 |
| Bioinspired synthesis of new silica structures SV Patwardhan, N Mukherjee, M Steinitz-Kannan, SJ Clarson Chemical Communications, 1122-1123, 2003 | 166 | 2003 |
| Non-planar, multi-gate InGaAs quantum well field effect transistors with high-K gate dielectric and ultra-scaled gate-to-drain/gate-to-source separation for low power logic … M Radosavljevic, G Dewey, JM Fastenau, J Kavalieros, R Kotlyar, ... 2010 International Electron Devices Meeting, 6.1. 1-6.1. 4, 2010 | 161 | 2010 |
| Transistors with high concentration of boron doped germanium AS Murthy, GA Glass, T Ghani, R Pillarisetty, N Mukherjee, JT Kavalieros, ... US Patent 8,901,537, 2014 | 157 | 2014 |
| Non-planar germanium quantum well devices R Pillarisetty, JT Kavalieros, W Rachmady, U Shah, B Chu-Kung, ... US Patent 8,283,653, 2012 | 151 | 2012 |
| Conformation and assembly of polypeptide scaffolds in templating the synthesis of silica: an example of a polylysine macromolecular “switch” SV Patwardhan, R Maheshwari, N Mukherjee, KL Kiick, SJ Clarson Biomacromolecules 7 (2), 491-497, 2006 | 151 | 2006 |
| Trench confined epitaxially grown device layer (s) R Pillarisetty, SH Sung, N Goel, JT Kavalieros, S DASGUPTA, VH Le, ... US Patent 8,765,563, 2014 | 124 | 2014 |
| Self-aligned structures and methods for asymmetric GaN transistors and enhancement mode operation S DASGUPTA, HW Then, M Radosavljevic, N Mukherjee, N Goel, ... US Patent 9,099,490, 2015 | 109 | 2015 |
| Effect of process parameters on the polymer mediated synthesis of silica at neutral pH SV Patwardhan, N Mukherjee, SJ Clarson Silicon Chemistry 1 (1), 47-54, 2002 | 96 | 2002 |
| The use of poly-L-lysine to form novel silica morphologies and the role of polypeptides in biosilicification SV Patwardhan, N Mukherjee, SJ Clarson Journal of Inorganic and Organometallic Polymers 11 (3), 193-198, 2001 | 89 | 2001 |
| High voltage field effect transistors HW Then, R Chau, B Chu-Kung, G Dewey, J Kavalieros, M Metz, ... US Patent 9,245,989, 2016 | 73 | 2016 |
| Experimental observation and physics of “negative” capacitance and steeper than 40mV/decade subthreshold swing in Al0.83In0.17N/AlN/GaN MOS-HEMT on … HW Then, S Dasgupta, M Radosavljevic, L Chow, B Chu-Kung, G Dewey, ... 2013 IEEE International Electron Devices Meeting, 28.3. 1-28.3. 4, 2013 | 64 | 2013 |
Marko RadosavljevicUniversity of Notre DameVerified email at nd.edu
