| Charge trap dynamics in a layer on Si by scanning capacitance microscopy CJ Kang, GH Buh, S Lee, CK Kim, KM Mang, C Im, Y Kuk Applied physics letters 74 (13), 1815-1817, 1999 | 74 | 1999 |
| Nonvolatile memory device having a program-assist plate K Mang, JD Choi US Patent 5,877,980, 1999 | 63 | 1999 |
| Depth dependent carrier density profile by scanning capacitance microscopy CJ Kang, CK Kim, JD Lera, Y Kuk, KM Mang, JG Lee, KS Suh, ... Applied physics letters 71 (11), 1546-1548, 1997 | 44 | 1997 |
| Methods of programming nonvolatile memory cells by floating drain or source regions associated therewith K Mang, JD Choi US Patent 6,246,607, 2001 | 41 | 2001 |
| Method of manufacturing a nonvolatile memory device having a program-assist plate K Mang, JD Choi US Patent 6,093,605, 2000 | 38 | 2000 |
| Scaling down of tunnel oxynitride in NAND flash memory: oxynitride selection and reliabilities J Kim, J Dal Choi, WC Shin, DJ Kim, HS Kim, KM Mang, ST Ahn, ... 1997 IEEE International Reliability Physics Symposium Proceedings. 35th …, 1997 | 29 | 1997 |
| Method of manufacturing non-volatile memory device WC Shin, J Kang, K Mang US Patent 6,180,457, 2001 | 17 | 2001 |
| Direct imaging of SiO2 thickness variation on Si using modified atomic force microscope KM Mang, Y Khang, YJ Park, Y Kuk, SM Lee, CC Williams Journal of Vacuum Science & Technology B: Microelectronics and Nanometer …, 1996 | 16 | 1996 |
| Fast parallel programming of multi-level NAND flash memory cells using the booster-line technology HS Kim, JD Choi, J Kim, WC Shin, DJ Kim, KM Mang, ST Ahn SYMPOSIUM ON VLSI TECHNOLOGY, 65-66, 1997 | 14 | 1997 |
| Direct imaging of charge redistribution in a thin SiO2 layer KM Mang, Y Kuk, J Kwon, YS Kim, D Jeon, CJ Kang EPL (Europhysics Letters) 67 (2), 261, 2004 | 12 | 2004 |
| Structure of nickel silicide on Si (001): An atomic view Y Khang, SJ Kahng, KM Mang, D Jeon, JH Lee, YN Kim, Y Kuk Journal of Vacuum Science & Technology B: Microelectronics and Nanometer …, 1994 | 11 | 1994 |
| A New Shared Bit Line NAND Cell Technology for the 256 Mb Flash Memory with 12V Programming WC Shin, JD Choi, DJ Kim, J Kim, HS Kim, KM Mang, CH Chung, ST Ahn, ... INTERNATIONAL ELECTRON DEVICES MEETING, 173-176, 1996 | 4 | 1996 |
| Schottky barrier height measurement on NiSi2/Si(100) by capacitance microscope Y Khang, KM Mang, KH Booh, Y Kuk Journal of Vacuum Science & Technology B: Microelectronics and Nanometer …, 1996 | 3 | 1996 |
| Observation of SiO 2 thickness variations on Si using AFM and SCM CJ Kang, GK Kim, SJ Kahng, Y Khang, SJ Lee, Y Kuk, KM Mang Journal of the Korean Physical Society 31 (SUPPL. PART 1), S88-S91, 1997 | 2 | 1997 |
| STRUCTURAL, MECHANICAL, THERMODYNAMIC, AND OPTICAL PROPERTIES OF CONDENSED MATTER-Charge trap dynamics in a SiO2 layer on Si by scanning capacitance microscopy CJ Kang, GH Buh, S Lee, CK Kim, KM Mang, C Im, Y Kuk Applied Physics Letters 74 (13), 1815-1817, 1999 | | 1999 |
| Impact of Low Thermal Budget Dual Oxidation on Tunnel Oxide Characteristics KM Mang, JH Kim, WC Shin, CH Shin, ST Ahn ICVC: International Conference on VLSI and CAD 5, 71-73, 1997 | | 1997 |
| Direct Imaging of Dopant Profiles using Modified Atomic Force Microscope KM Mang, Y Khang, YJ Park, Y Kuk, SM Lee, CC Willians 대한전자공학회 학술대회, 397-398, 1996 | | 1996 |
| Capacitance Measurement for Electron Transport Characterization Y Khang, KM Mang, YJ Park, Y Kuk 한국진공학회 학술발표회초록집, 117-117, 1995 | | 1995 |
