| Quantum simulation of the Hubbard model with dopant atoms in silicon J Salfi, JA Mol, R Rahman, G Klimeck, MY Simmons, LCL Hollenberg, ... Nature communications 7, 11342, 2016 | 134 | 2016 |
| Roadmap on quantum nanotechnologies A Laucht, F Hohls, N Ubbelohde, MF Gonzalez-Zalba, DJ Reilly, S Stobbe, ... Nanotechnology 32 (16), 162003, 2021 | 132 | 2021 |
| Spatially resolving valley quantum interference of a donor in silicon J Salfi, JA Mol, R Rahman, G Klimeck, MY Simmons, LCL Hollenberg, ... Nature materials 13 (6), 605, 2014 | 129 | 2014 |
| Engineering long spin coherence times of spin–orbit qubits in silicon T Kobayashi, J Salfi, C Chua, J Van Der Heijden, MG House, D Culcer, ... Nature Materials 20 (1), 38-42, 2021 | 98 | 2021 |
| Optimal operation points for ultrafast, highly coherent Ge hole spin-orbit qubits Z Wang, E Marcellina, AR Hamilton, JH Cullen, S Rogge, J Salfi, D Culcer npj Quantum Information 7 (1), 54, 2021 | 94 | 2021 |
| Electrical properties of Ohmic contacts to ZnSe nanowires and their application to nanowire-based photodetection J Salfi, U Philipose, CF De Sousa, S Aouba, HE Ruda Applied physics letters 89 (26), 2006 | 94 | 2006 |
| Direct observation of single-charge-detection capability of nanowire field-effect transistors J Salfi, IG Savelyev, M Blumin, SV Nair, HE Ruda Nature nanotechnology 5 (10), 737-741, 2010 | 83 | 2010 |
| Transport and strain relaxation in wurtzite InAs–GaAs core-shell heterowires KL Kavanagh, J Salfi, I Savelyev, M Blumin, HE Ruda Applied Physics Letters 98 (15), 2011 | 80 | 2011 |
| Spatial metrology of dopants in silicon with exact lattice site precision M Usman, J Bocquel, J Salfi, B Voisin, A Tankasala, R Rahman, ... Nature nanotechnology 11 (9), 763-768, 2016 | 72 | 2016 |
| Charge-insensitive single-atom spin-orbit qubit in silicon J Salfi, JA Mol, D Culcer, S Rogge Physical review letters 116 (24), 246801, 2016 | 69 | 2016 |
| Quantum computing with acceptor spins in silicon J Salfi, M Tong, S Rogge, D Culcer Nanotechnology 27 (24), 244001, 2016 | 63 | 2016 |
| Probing the spin states of a single acceptor atom J Van der Heijden, J Salfi, JA Mol, J Verduijn, GC Tettamanzi, ... Nano letters 14 (3), 1492-1496, 2014 | 57 | 2014 |
| Electronic properties of quantum dot systems realized in semiconductor nanowires J Salfi, S Roddaro, D Ercolani, L Sorba, I Savelyev, M Blumin, HE Ruda, ... Semiconductor Science and Technology 25 (2), 024007, 2010 | 51 | 2010 |
| Valley interference and spin exchange at the atomic scale in silicon B Voisin, J Bocquel, A Tankasala, M Usman, J Salfi, R Rahman, ... Nature communications 11 (1), 6124, 2020 | 47 | 2020 |
| Quantum computing with acceptor-based qubits S ROGGE, J SALFI, JA MOL US Patent 9,691,033, 2017 | 47 | 2017 |
| Readout and control of the spin-orbit states of two coupled acceptor atoms in a silicon transistor J van der Heijden, T Kobayashi, MG House, J Salfi, S Barraud, ... Science advances 4 (12), eaat9199, 2018 | 43* | 2018 |
| Room temperature single nanowire ZnTe photoconductors grown by metal-organic chemical vapor deposition Z Li, J Salfi, C De Souza, P Sun, SV Nair, HE Ruda Applied Physics Letters 97 (6), 2010 | 40 | 2010 |
| Electrical operation of planar Ge hole spin qubits in an in-plane magnetic field A Sarkar, Z Wang, M Rendell, NW Hendrickx, M Veldhorst, G Scappucci, ... arXiv preprint arXiv:2307.01451, 2023 | 31 | 2023 |
| Donor hyperfine stark shift and the role of central-cell corrections in tight-binding theory M Usman, R Rahman, J Salfi, J Bocquel, B Voisin, S Rogge, G Klimeck, ... Journal of Physics: Condensed Matter 27 (15), 154207, 2015 | 31 | 2015 |
| Interplay between quantum confinement and dielectric mismatch for ultra-shallow dopants JA Mol, J Salfi, JA Miwa, MY Simmons, S Rogge arXiv preprint arXiv:1303.2712, 2013 | 31 | 2013 |
Sven RoggeProfessor of Physics, University of New South WalesVerified email at unsw.edu.au
