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Thibault Sohier
Thibault Sohier
CNRS, Laboratoire Charles Coulomb, Montpellier
Verified email at umontpellier.fr - Homepage
Title
Cited by
Cited by
Year
Two-dimensional materials from high-throughput computational exfoliation of experimentally known compounds
N Mounet, M Gibertini, P Schwaller, D Campi, A Merkys, A Marrazzo, ...
Nature nanotechnology 13 (3), 246-252, 2018
20782018
Density functional perturbation theory for gated two-dimensional heterostructures: Theoretical developments and application to flexural phonons in graphene
T Sohier, M Calandra, F Mauri
Physical Review B 96 (7), 075448, 2017
3592017
Two-dimensional Fröhlich interaction in transition-metal dichalcogenide monolayers: Theoretical modeling and first-principles calculations
T Sohier, M Calandra, F Mauri
Physical Review B 94 (8), 085415, 2016
2452016
Electron–phonon interactions and the intrinsic electrical resistivity of graphene
CH Park, N Bonini, T Sohier, G Samsonidze, B Kozinsky, M Calandra, ...
Nano letters 14 (3), 1113-1119, 2014
2242014
Breakdown of optical phonons' splitting in two-dimensional materials
T Sohier, M Gibertini, M Calandra, F Mauri, N Marzari
Nano Letters 17 (6), 3758-3763, 2017
1892017
Phonon-limited resistivity of graphene by first-principle calculations: Electron-phonon interactions, strain-induced gauge field and Boltzmann equation
T Sohier, M Calandra, CH Park, N Bonini, N Marzari, F Mauri
arXiv preprint arXiv:1407.0830, 2014
1742014
Mobility of two-dimensional materials from first principles in an accurate and automated framework
T Sohier, D Campi, N Marzari, M Gibertini
Physical Review Materials 2 (11), 114010, 2018
1612018
Enhanced electron-phonon interaction in multivalley materials
T Sohier, E Ponomarev, M Gibertini, H Berger, N Marzari, N Ubrig, ...
Physical Review X 9 (3), 031019, 2019
1322019
Hot-carrier cooling in high-quality graphene is intrinsically limited by optical phonons
EAA Pogna, X Jia, A Principi, A Block, L Banszerus, J Zhang, X Liu, ...
ACS nano 15 (7), 11285-11295, 2021
1032021
Electron mobility in monolayer WS2 encapsulated in hexagonal boron-nitride
Y Wang, T Sohier, K Watanabe, T Taniguchi, MJ Verstraete, E Tutuc
Applied Physics Letters 118 (10), 2021
552021
Extraordinary high room-temperature carrier mobility in graphene-WSe heterostructures
L Banszerus, T Sohier, A Epping, F Winkler, F Libisch, F Haupt, ...
arXiv preprint arXiv:1909.09523, 2019
502019
Valley-engineering mobilities in two-dimensional materials
T Sohier, M Gibertini, D Campi, G Pizzi, N Marzari
Nano letters 19 (6), 3723-3729, 2019
392019
Density-functional calculation of static screening in two-dimensional materials: The long-wavelength dielectric function of graphene
T Sohier, M Calandra, F Mauri
Physical Review B 91 (16), 165428, 2015
342015
Electron-phonon interaction and phonon frequencies in two-dimensional doped semiconductors
F Macheda, T Sohier, P Barone, F Mauri
Physical Review B 107 (9), 094308, 2023
262023
Remote free-carrier screening to boost the mobility of Fröhlich-limited two-dimensional semiconductors
T Sohier, M Gibertini, MJ Verstraete
Physical Review Materials 5 (2), 024004, 2021
262021
Deterministic grayscale nanotopography to engineer mobilities in strained MoS2 FETs
X Liu, B Erbas, A Conde-Rubio, N Rivano, Z Wang, J Jiang, S Bienz, ...
Nature communications 15 (1), 6934, 2024
252024
Ultralow-voltage design of graphene PN junction quantum reflective switch transistor
T Sohier, B Yu
Applied Physics Letters 98 (21), 2011
192011
Profiling novel high-conductivity 2D semiconductors
T Sohier, M Gibertini, N Marzari
2D Materials 8 (1), 015025, 2020
162020
Theory of infrared double-resonance Raman spectrum in graphene: The role of the zone-boundary electron-phonon enhancement
L Graziotto, F Macheda, T Sohier, M Calandra, F Mauri
Physical Review B 109 (7), 075420, 2024
132024
Infrared-active phonons in one-dimensional materials and their spectroscopic signatures
N Rivano, N Marzari, T Sohier
npj Computational Materials 9 (1), 194, 2023
122023
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Articles 1–20