| Reconfigurable field effect transistors: A technology enablers perspective T Mikolajick, G Galderisi, S Rai, M Simon, R Böckle, M Sistani, C Cakirlar, ... Solid-State Electronics 194, 108381, 2022 | 99 | 2022 |
| Epitaxial Ge0.81Sn0.19 Nanowires for Nanoscale Mid-Infrared Emitters MS Seifner, A Dijkstra, J Bernardi, A Steiger-Thirsfeld, M Sistani, ... ACS nano 13 (7), 8047-8054, 2019 | 54 | 2019 |
| Room-temperature quantum ballistic transport in monolithic ultrascaled Al–Ge–Al nanowire heterostructures M Sistani, P Staudinger, J Greil, M Holzbauer, H Detz, E Bertagnolli, ... Nano letters 17 (8), 4556-4561, 2017 | 54 | 2017 |
| Nanometer-scale Ge-based adaptable transistors providing programmable negative differential resistance enabling multivalued logic M Sistani, R Böckle, D Falkensteiner, MA Luong, MI den Hertog, ... ACS nano 15 (11), 18135-18141, 2021 | 44 | 2021 |
| Reconfigurable Field‐Effect Transistor Technology via Heterogeneous Integration of SiGe with Crystalline Al Contacts A Fuchsberger, L Wind, M Sistani, R Behrle, D Nazzari, J Aberl, ... Advanced Electronic Materials 9 (6), 2201259, 2023 | 42 | 2023 |
| Composition Dependent Electrical Transport in Si1−xGex Nanosheets with Monolithic Single‐Elementary Al Contacts L Wind, M Sistani, R Böckle, J Smoliner, L Vukŭsić, J Aberl, M Brehm, ... Small 18 (44), 2204178, 2022 | 39 | 2022 |
| Direct synthesis of hyperdoped germanium nanowires MS Seifner, M Sistani, F Porrati, G Di Prima, P Pertl, M Huth, A Lugstein, ... ACS nano 12 (2), 1236-1241, 2018 | 39 | 2018 |
| Ultrascaled germanium nanowires for highly sensitive photodetection at the quantum ballistic limit P Staudinger, M Sistani, J Greil, E Bertagnolli, A Lugstein Nano letters 18 (8), 5030-5035, 2018 | 38 | 2018 |
| A top‐down platform enabling Ge based reconfigurable transistors R Böckle, M Sistani, B Lipovec, D Pohl, B Rellinghaus, A Lugstein, ... Advanced Materials Technologies 7 (1), 2100647, 2022 | 37 | 2022 |
| Monolithic and single-crystalline aluminum–silicon heterostructures L Wind, R Böckle, M Sistani, P Schweizer, X Maeder, J Michler, ... ACS Applied Materials & Interfaces 14 (22), 26238-26244, 2022 | 33 | 2022 |
| Octave-spanning low-loss mid-IR waveguides based on semiconductor-loaded plasmonics M David, A Dabrowska, M Sistani, IC Doganlar, E Hinkelmann, H Detz, ... Optics Express 29 (26), 43567-43579, 2021 | 33 | 2021 |
| Monolithic axial and radial metal–semiconductor nanowire heterostructures M Sistani, MA Luong, MI Den Hertog, E Robin, M Spies, B Fernandez, ... Nano Letters 18 (12), 7692-7697, 2018 | 33 | 2018 |
| Polarity control in ge nanowires by electronic surface doping M Sistani, P Staudinger, A Lugstein The Journal of Physical Chemistry C 124 (36), 19858-19863, 2020 | 31 | 2020 |
| Gate‐tunable negative differential resistance in next‐generation ge nanodevices and their performance metrics R Böckle, M Sistani, K Eysin, MG Bartmann, MA Luong, MI den Hertog, ... Advanced Electronic Materials 7 (3), 2001178, 2021 | 30 | 2021 |
| Monolithic Metal−Semiconductor−Metal Heterostructures Enabling Next-Generation Germanium Nanodevices AL Lukas Wind, Masiar Sistani, Zehao Song, Xavier Maeder, Darius Pohl ... ACS Applied Materials & Interfaces, 2021 | 29 | 2021 |
| Plasmon-Driven Hot Electron Transfer at Atomically Sharp Metal–Semiconductor Nanojunctions M Sistani, MG Bartmann, NA Güsken, RF Oulton, H Keshmiri, MA Luong, ... ACS photonics 7 (7), 1642-1648, 2020 | 28 | 2020 |
| Highly transparent contacts to the 1D hole gas in ultrascaled Ge/Si core/shell nanowires M Sistani, J Delaforce, RBG Kramer, N Roch, MA Luong, MI den Hertog, ... ACS nano 13 (12), 14145-14151, 2019 | 28 | 2019 |
| Nanoscale aluminum plasmonic waveguide with monolithically integrated germanium detector M Sistani, MG Bartmann, NA Güsken, RF Oulton, H Keshmiri, MS Seifner, ... Applied Physics Letters 115 (16), 2019 | 28 | 2019 |
| A run-time reconfigurable Ge field-effect transistor with symmetric on-states A Fuchsberger, L Wind, D Nazzari, L Kühberger, D Popp, J Aberl, ... IEEE Journal of the Electron Devices Society 12, 83-87, 2024 | 25 | 2024 |
| Reconfigurable Complementary and Combinational Logic Based on Monolithic and Single‐Crystalline Al‐Si Heterostructures R Böckle, M Sistani, M Bažíková, L Wind, Z Sadre‐Momtaz, MI den Hertog, ... Advanced Electronic Materials 9 (1), 2200567, 2023 | 24 | 2023 |
Walter M. WeberProfessor of Nanoelectronics at TU WienVerified email at tuwien.ac.at
