| Logic compatible high-performance ferroelectric transistor memory S Dutta, H Ye, AA Khandker, SG Kirtania, A Khanna, K Ni, S Datta IEEE Electron Device Letters 43 (3), 382-385, 2022 | 95 | 2022 |
| BEOL-compatible superlattice FEFET analog synapse with improved linearity and symmetry of weight update KA Aabrar, SG Kirtania, FX Liang, J Gomez, M San Jose, Y Luo, H Ye, ... IEEE Transactions on Electron Devices 69 (4), 2094-2100, 2022 | 65 | 2022 |
| Characterization and modeling of 22 nm FDSOI cryogenic RF CMOS W Chakraborty, KA Aabrar, J Gomez, R Saligram, A Raychowdhury, P Fay, ... IEEE Journal on Exploratory Solid-State Computational Devices and Circuits 7 …, 2021 | 46 | 2021 |
| BEOL Compatible Superlattice FerroFET-based High Precision Analog Weight Cell with Superior Linearity and Symmetry KA Aabrar, J Gomez, SG Kirtania, MS Jose, Y Luo, PG Ravikumar, ... 2021 IEEE International Electron Devices Meeting (IEDM), 2021 | 42 | 2021 |
| Lifelong learning with monolithic 3D ferroelectric ternary content-addressable memory S Dutta, A Khanna, H Ye, MM Sharifi, A Kazemi, M San Jose, KA Aabrar, ... 2021 IEEE international Electron devices meeting (IEDM), 1-4, 2021 | 36 | 2021 |
| Amorphous oxide semiconductors for monolithic 3D integrated circuits S Datta, E Sarkar, K Aabrar, S Deng, J Shin, A Raychowdhury, S Yu, ... 2024 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and …, 2024 | 25 | 2024 |
| Improved Reliability and Enhanced Performance in BEOL Compatible W-doped In2O3 Dual-Gate Transistor KA Aabrar, SG Kirtania, S Deng, G Choe, A Khan, S Yu, S Datta 2023 International Electron Devices Meeting (IEDM), 1-4, 2023 | 25 | 2023 |
| Cryogenic RF CMOS on 22nm FDSOI Platform with Record fT=495GHz and fMAX=497GHz W Chakraborty, KA Aabrar, J Gomez, R Saligram, A Raychowdhury, P Fay, ... 2021 Symposium on VLSI Technology, 1-2, 2021 | 22 | 2021 |
| Pseudo-static 1T capacitorless DRAM using 22nm FDSOI for cryogenic cache memory W Chakraborty, R Saligram, A Gupta, M San Jose, KA Aabrar, S Dutta, ... 2021 IEEE International Electron Devices Meeting (IEDM), 40.1. 1-40.1. 4, 2021 | 20 | 2021 |
| Cold-FeFET as embedded non-volatile memory with unlimited cycling endurance SG Kirtania, KA Aabrar, AI Khan, S Yu, S Datta 2023 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and …, 2023 | 18 | 2023 |
| MAX Phase Ti2AlN for HfO2 Memristors with Ultra‐Low Reset Current Density and Large On/Off Ratio FF Athena, M Nnaji, D Vaca, M Tian, W Buchmaier, KA Aabrar, S Graham, ... Advanced Functional Materials 34 (29), 2316290, 2024 | 14 | 2024 |
| On the Reliability of High-Performance Dual Gate (DG) W-Doped In2O3 FET KA Aabrar, H Park, SG Kirtania, E Sarkar, MA Al Mamun, S Deng, ... 2024 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and …, 2024 | 12 | 2024 |
| Theoretical and Empirical Insight into Dopant, Mobility and Defect States in W Doped Amorphous In2 O3 for High-Performance Enhancement Mode BEOL … Y Hu, H Ye, KA Aabrar, SG Kirtania, W Chakraborty, S Datta, K Cho 2022 International Electron Devices Meeting (IEDM), 8.5. 1-8.5. 4, 2022 | 12 | 2022 |
| A thousand state superlattice (SL) FEFET analog weight cell KA Aabrar, SG Kirtania, A Lu, A Khanna, W Chakraborty, M San Jose, ... 2022 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and …, 2022 | 12 | 2022 |
| Direct Quantitative Extraction of Internal Variables from Measured PUND Characteristics Providing New Key Insights into Physics and Performance of Silicon and Oxide Channel … Matthias Passlack, Nujhat Tasneem*, Zheng Wang*, Khandker A. Aabrar**, Jae ... IEEE International Electron Devices Meeting (IEDM), 2022 | 11* | 2022 |
| BEOL compatible oxide power transistors for on-chip voltage conversion in heterogenous 3D (H3D) integrated circuits S Deng, J Kwak, J Lee, KA Aabrar, TH Kim, G Choe, SG Kirtania, C Zhang, ... 2023 International Electron Devices Meeting (IEDM), 1-4, 2023 | 10 | 2023 |
| Higher-k Zirconium Doped Hafnium Oxide (HZO) Trigate Transistors with Higher DC and RF Performance and Improved Reliability W Chakraborty, MS Jose, J Gomez, A Saha, KA Aabrar, P Fay, S Gupta, ... 2021 Symposium on VLSI Technology, 1-2, 2021 | 10 | 2021 |
| Low-frequency noise characteristics of ferroelectric field-effect transistors O Phadke, KA Aabrar, Y Luo, SG Kirtania, AI Khan, S Datta, S Yu 2023 IEEE International Reliability Physics Symposium (IRPS), 1-4, 2023 | 8 | 2023 |
| Large injection velocities in highly scaled, fully depleted silicon on insulator transistors YH Liao, KA Aabrar, W Chakraborty, W Li, S Datta, S Salahuddin IEEE Electron Device Letters 43 (2), 184-187, 2021 | 8 | 2021 |
| First Demonstration of W-Doped In2O3 Gate-All-Around (GAA) Nanosheet FET with Improved Performance and Record Threshold Voltage Stability E Sarkar, C Zhang, D Chakraborty, FG Waqar, S Kirtania, KA Aabrar, ... 2024 IEEE International Electron Devices Meeting (IEDM), 1-4, 2024 | 6 | 2024 |
Suman DattaJoseph M. Pettit Chair ProfessorVerified email at gatech.edu
