| Overview of radiation induced point defects in silica-based optical fibers S Girard, A Alessi, N Richard, L Martin-Samos, V De Michele, ... Reviews in Physics 4, 100032, 2019 | 414 | 2019 |
| Combined high dose and temperature radiation effects on multimode silica-based optical fibers S Girard, C Marcandella, A Morana, J Perisse, D Di Francesca, P Paillet, ... IEEE transactions on nuclear science 60 (6), 4305-4313, 2013 | 124 | 2013 |
| Radiation effects on silica-based preforms and optical fibers—I: Experimental study with canonical samples S Girard, Y Ouerdane, G Origlio, C Marcandella, A Boukenter, N Richard, ... IEEE Transactions on Nuclear Science 55 (6), 3473-3482, 2009 | 119 | 2009 |
| Simulation of single particle displacement damage in silicon–Part II: Generation and long-time relaxation of damage structure A Jay, M Raine, N Richard, N Mousseau, V Goiffon, A Hémeryck, ... IEEE Transactions on Nuclear Science 64 (1), 141-148, 2016 | 86 | 2016 |
| Impact of SOI substrate on the radiation response of ultrathin transistors down to the 20 nm node M Gaillardin, M Martinez, P Paillet, F Andrieu, S Girard, M Raine, ... IEEE Transactions on Nuclear Science 60 (4), 2583-2589, 2013 | 86 | 2013 |
| Neutral self-defects in a silica model: A first-principles study L Martin-Samos, Y Limoge, JP Crocombette, G Roma, N Richard, ... Physical Review B—Condensed Matter and Materials Physics 71 (1), 014116, 2005 | 82 | 2005 |
| A diffusion–reaction scheme for modeling ignition and self-propagating reactions in Al/CuO multilayered thin films G Lahiner, A Nicollet, J Zapata, L Marín, N Richard, MD Rouhani, C Rossi, ... Journal of Applied Physics 122 (15), 2017 | 61 | 2017 |
| EPR parameters of E′ centers in v-SiO2 from first-principles calculations L Giacomazzi, L Martin-Samos, A Boukenter, Y Ouerdane, S Girard, ... Phys. Rev. B 90 (1), 014108, 2014 | 54 | 2014 |
| Transient radiation responses of optical fibers: influence of MCVD process parameters S Girard, C Marcandella, A Alessi, A Boukenter, Y Ouerdane, N Richard, ... IEEE Transactions on Nuclear Science 59 (6), 2894-2901, 2013 | 54 | 2013 |
| First principle study of neutral and charged self-defects in amorphous SiO2 N Richard, L Martin-Samos, G Roma, Y Limoge, JP Crocombette Journal of non-crystalline solids 351 (21-23), 1825-1829, 2005 | 53 | 2005 |
| Finding reaction pathways and transition states: r-ARTn and d-ARTn as an efficient and versatile alternative to string approaches A Jay, C Huet, N Salles, M Gunde, L Martin-Samos, N Richard, G Landa, ... Journal of Chemical Theory and Computation 16 (10), 6726-6734, 2020 | 51 | 2020 |
| Simulation of single particle displacement damage in silicon–part I: global approach and primary interaction simulation M Raine, A Jay, N Richard, V Goiffon, S Girard, M Gaillardin, P Paillet IEEE Transactions on Nuclear Science 64 (1), 133-140, 2016 | 51 | 2016 |
| Radiation Effects on Silica-Based Preforms and Optical Fibers-II: Coupling Ab initio Simulations and Experiments S Girard, N Richard, Y Ouerdane, G Origlio, A Boukenter, L Martin-Samos, ... IEEE Transactions on Nuclear Science 55 (6), 3508-3514, 2009 | 51 | 2009 |
| Plane-wave pseudopotential study of the light actinides N Richard, S Bernard, F Jollet, M Torrent Physical Review B 66 (23), 235112, 2002 | 49 | 2002 |
| X-ray irradiation effects on fluorine-doped germanosilicate optical fibers D Di Francesca, A Boukenter, S Agnello, S Girard, A Alessi, P Paillet, ... Optical Materials Express 4 (8), 1683-1695, 2014 | 44 | 2014 |
| Radiation effects in advanced SOI devices: New insights into total ionizing dose and single-event effects M Gaillardin, M Raine, P Paillet, M Martinez, C Marcandella, S Girard, ... 2013 IEEE SOI-3D-Subthreshold Microelectronics Technology Unified Conference …, 2013 | 43 | 2013 |
| Ge(2), Ge(1) and Ge-E′ centers in irradiated Ge-doped silica: a first-principles EPR study L Giacomazzi, L Martin-Samos, A Boukenter, Y Ouerdane, S Girard, ... Optical Materials Express 5 (5), 1054-1064, 2015 | 42 | 2015 |
| Difficulty for oxygen to incorporate into the silicon network during initial O2 oxidation of Si (100)-(2× 1) A Hemeryck, AJ Mayne, N Richard, A Estève, YJ Chabal, ... The Journal of chemical physics 126 (11), 2007 | 42 | 2007 |
| Diffusion of oxygen atom in the topmost layer of the Si (1 0 0) surface: Structures and oxidation kinetics A Hemeryck, N Richard, A Estève, MD Rouhani Surface science 601 (11), 2339-2343, 2007 | 40 | 2007 |
| Total ionizing dose response of multiple-gate nanowire field effect transistors M Gaillardin, C Marcandella, M Martinez, O Duhamel, T Lagutere, ... IEEE Transactions on Nuclear Science 64 (8), 2061-2068, 2017 | 38 | 2017 |
Layla Martin-SamosResearcher CNR-IOM DemocritosVerified email at sissa.it
