| Dielectric breakdown mechanisms in gate oxides S Lombardo, JH Stathis, BP Linder, KL Pey, F Palumbo, CH Tung Journal of applied physics 98 (12), 2005 | 585 | 2005 |
| A Review on Dielectric Breakdown in Thin Dielectrics: Silicon Dioxide, High‐k, and Layered Dielectrics F Palumbo, C Wen, S Lombardo, S Pazos, F Aguirre, M Eizenberg, F Hui, ... Advanced Functional Materials 30 (18), 1900657, 2020 | 294 | 2020 |
| Standards for the characterization of endurance in resistive switching devices M Lanza, R Waser, D Ielmini, JJ Yang, L Goux, J Suñe, AJ Kenyon, ... ACS nano 15 (11), 17214-17231, 2021 | 262 | 2021 |
| Percolation path and dielectric-breakdown-induced-epitaxy evolution during ultrathin gate dielectric breakdown transient CH Tung, KL Pey, LJ Tang, MK Radhakrishnan, WH Lin, F Palumbo, ... Applied Physics Letters 83 (11), 2223-2225, 2003 | 118 | 2003 |
| On the thermal models for resistive random access memory circuit simulation JB Roldán, G González-Cordero, R Picos, E Miranda, F Palumbo, ... Nanomaterials 11 (5), 1261, 2021 | 76 | 2021 |
| Dielectric breakdown in chemical vapor deposited hexagonal boron nitride L Jiang, Y Shi, F Hui, K Tang, Q Wu, C Pan, X Jing, H Uppal, F Palumbo, ... ACS Applied Materials & Interfaces 9 (45), 39758-39770, 2017 | 67 | 2017 |
| Continuous High-Altitude Measurements of Cosmic Ray Neutrons and SEU/MCU at Various Locations: Correlation and Analyses Based-On MUSCA SEP G Hubert, R Velazco, C Federico, A Cheminet, C Silva-Cardenas, ... IEEE Transactions on Nuclear Science 60 (4), 2418-2426, 2013 | 53 | 2013 |
| 150 nm× 200 nm cross‐point hexagonal boron nitride‐based memristors B Yuan, X Liang, L Zhong, Y Shi, F Palumbo, S Chen, F Hui, X Jing, ... Advanced Electronic Materials 6 (12), 1900115, 2020 | 49 | 2020 |
| A novel approach to characterization of progressive breakdown in high-k/metal gate stacks R Pagano, S Lombardo, F Palumbo, P Kirsch, SA Krishnan, C Young, ... Microelectronics Reliability 48 (11-12), 1759-1764, 2008 | 43 | 2008 |
| Physical mechanism of progressive breakdown in gate oxides F Palumbo, S Lombardo, M Eizenberg Journal of Applied Physics 115 (22), 2014 | 41 | 2014 |
| Temperature of conductive nanofilaments in hexagonal boron nitride based memristors showing threshold resistive switching M Lanza, F Palumbo, Y Shi, F Aguirre, S Boyeras, B Yuan, E Yalon, ... Advanced Electronic Materials 8 (8), 2100580, 2022 | 36 | 2022 |
| Application of the quasi-static memdiode model in cross-point arrays for large dataset pattern recognition FL Aguirre, SM Pazos, F Palumbo, J Suñé, E Miranda IEEE Access 8, 202174-202193, 2020 | 36 | 2020 |
| Radiation hardness of silicon photomultipliers under 60Co γ-ray irradiation R Pagano, S Lombardo, F Palumbo, D Sanfilippo, G Valvo, G Fallica, ... Nuclear Instruments and Methods in Physics Research Section A: Accelerators …, 2014 | 32 | 2014 |
| High‐temporal‐resolution characterization reveals outstanding random telegraph noise and the origin of dielectric breakdown in h‐BN memristors S Pazos, T Becker, MA Villena, W Zheng, Y Shen, Y Yuan, O Alharbi, ... Advanced Functional Materials 34 (15), 2213816, 2024 | 30 | 2024 |
| Hardware implementation of a true random number generator integrating a hexagonal boron nitride memristor with a commercial microcontroller S Pazos, W Zheng, T Zanotti, F Aguirre, T Becker, Y Shen, K Zhu, Y Yuan, ... Nanoscale 15 (5), 2171-2180, 2023 | 29 | 2023 |
| Hf-based high-k dielectrics for p-Ge MOS gate stacks S Fadida, F Palumbo, L Nyns, D Lin, S Van Elshocht, M Caymax, ... Journal of Vacuum Science & Technology B 32 (3), 2014 | 26 | 2014 |
| Degradation characteristics of metal/Al2O3/n-InGaAs capacitors F Palumbo, M Eizenberg Journal of Applied Physics 115 (1), 2014 | 25 | 2014 |
| Formation and Characterization of Filamentary Current Paths in-Based Resistive Switching Structures F Palumbo, E Miranda, G Ghibaudo, V Jousseaume IEEE electron device letters 33 (7), 1057-1059, 2012 | 21 | 2012 |
| Analytic expression for the Fowler–Nordheim V–I characteristic including the series resistance effect E Miranda, F Palumbo Solid-state electronics 61 (1), 93-95, 2011 | 21 | 2011 |
| Role of reactive gas on the structure and properties of titanium nitride films grown by plasma enhanced atomic layer deposition I Krylov, X Xu, E Zoubenko, K Weinfeld, S Boyeras, F Palumbo, ... Journal of Vacuum Science & Technology A 36 (6), 2018 | 20 | 2018 |
Salvatore LombardoCNR-IMMVerified email at imm.cnr.it
