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WO2021109740A1 - 电子雾化装置、雾化芯及其制备方法 - Google Patents

电子雾化装置、雾化芯及其制备方法 Download PDF

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Publication number
WO2021109740A1
WO2021109740A1 PCT/CN2020/122524 CN2020122524W WO2021109740A1 WO 2021109740 A1 WO2021109740 A1 WO 2021109740A1 CN 2020122524 W CN2020122524 W CN 2020122524W WO 2021109740 A1 WO2021109740 A1 WO 2021109740A1
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Prior art keywords
porous ceramic
ceramic
ceramic substrate
coating layer
covering
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/CN2020/122524
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English (en)
French (fr)
Inventor
周宏明
蒋冬福
朱彩强
程振乾
陈枫
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Shenzhen Smoore Technology Ltd
Original Assignee
Shenzhen Smoore Technology Ltd
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Priority to EP20895239.0A priority Critical patent/EP4070673B1/en
Publication of WO2021109740A1 publication Critical patent/WO2021109740A1/zh
Priority to US17/826,513 priority patent/US20220279855A1/en
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

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    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B32—LAYERED PRODUCTS
    • B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B18/00—Layered products essentially comprising ceramics, e.g. refractory products
    • A—HUMAN NECESSITIES
    • A24—TOBACCO; CIGARS; CIGARETTES; SIMULATED SMOKING DEVICES; SMOKERS' REQUISITES
    • A24F—SMOKERS' REQUISITES; MATCH BOXES; SIMULATED SMOKING DEVICES
    • A24F40/00—Electrically operated smoking devices; Component parts thereof; Manufacture thereof; Maintenance or testing thereof; Charging means specially adapted therefor
    • A24F40/40—Constructional details, e.g. connection of cartridges and battery parts
    • A24F40/46—Shape or structure of electric heating means
    • A—HUMAN NECESSITIES
    • A24—TOBACCO; CIGARS; CIGARETTES; SIMULATED SMOKING DEVICES; SMOKERS' REQUISITES
    • A24F—SMOKERS' REQUISITES; MATCH BOXES; SIMULATED SMOKING DEVICES
    • A24F40/00—Electrically operated smoking devices; Component parts thereof; Manufacture thereof; Maintenance or testing thereof; Charging means specially adapted therefor
    • A24F40/70—Manufacture
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B37/00—Joining burned ceramic articles with other burned ceramic articles or other articles by heating
    • C04B37/001—Joining burned ceramic articles with other burned ceramic articles or other articles by heating directly with other burned ceramic articles
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B38/00—Porous mortars, concrete, artificial stone or ceramic ware; Preparation thereof
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B38/00—Porous mortars, concrete, artificial stone or ceramic ware; Preparation thereof
    • C04B38/0003—Porous mortars, concrete, artificial stone or ceramic ware; Preparation thereof containing continuous channels, e.g. of the "dead-end" type or obtained by pushing bars in the green ceramic product
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
    • H05B3/00—Ohmic-resistance heating
    • H05B3/10—Heating elements characterised by the composition or nature of the materials or by the arrangement of the conductor
    • H05B3/16—Heating elements characterised by the composition or nature of the materials or by the arrangement of the conductor the conductor being mounted on an insulating base
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
    • H05B3/00—Ohmic-resistance heating
    • H05B3/20—Heating elements having extended surface area substantially in a two-dimensional plane, e.g. plate-heater
    • H05B3/22—Heating elements having extended surface area substantially in a two-dimensional plane, e.g. plate-heater non-flexible
    • H05B3/26—Heating elements having extended surface area substantially in a two-dimensional plane, e.g. plate-heater non-flexible heating conductor mounted on insulating base
    • H05B3/265—Heating elements having extended surface area substantially in a two-dimensional plane, e.g. plate-heater non-flexible heating conductor mounted on insulating base the insulating base being an inorganic material, e.g. ceramic
    • A—HUMAN NECESSITIES
    • A24—TOBACCO; CIGARS; CIGARETTES; SIMULATED SMOKING DEVICES; SMOKERS' REQUISITES
    • A24F—SMOKERS' REQUISITES; MATCH BOXES; SIMULATED SMOKING DEVICES
    • A24F40/00—Electrically operated smoking devices; Component parts thereof; Manufacture thereof; Maintenance or testing thereof; Charging means specially adapted therefor
    • A24F40/10—Devices using liquid inhalable precursors
    • A—HUMAN NECESSITIES
    • A24—TOBACCO; CIGARS; CIGARETTES; SIMULATED SMOKING DEVICES; SMOKERS' REQUISITES
    • A24F—SMOKERS' REQUISITES; MATCH BOXES; SIMULATED SMOKING DEVICES
    • A24F40/00—Electrically operated smoking devices; Component parts thereof; Manufacture thereof; Maintenance or testing thereof; Charging means specially adapted therefor
    • A24F40/40—Constructional details, e.g. connection of cartridges and battery parts
    • A24F40/44—Wicks
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B2237/00—Aspects relating to ceramic laminates or to joining of ceramic articles with other articles by heating
    • C04B2237/30—Composition of layers of ceramic laminates or of ceramic or metallic articles to be joined by heating, e.g. Si substrates
    • C04B2237/32—Ceramic
    • C04B2237/34—Oxidic
    • C04B2237/341—Silica or silicates
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B2237/00—Aspects relating to ceramic laminates or to joining of ceramic articles with other articles by heating
    • C04B2237/30—Composition of layers of ceramic laminates or of ceramic or metallic articles to be joined by heating, e.g. Si substrates
    • C04B2237/32—Ceramic
    • C04B2237/34—Oxidic
    • C04B2237/343—Alumina or aluminates
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B2237/00—Aspects relating to ceramic laminates or to joining of ceramic articles with other articles by heating
    • C04B2237/30—Composition of layers of ceramic laminates or of ceramic or metallic articles to be joined by heating, e.g. Si substrates
    • C04B2237/32—Ceramic
    • C04B2237/34—Oxidic
    • C04B2237/345—Refractory metal oxides
    • C04B2237/348—Zirconia, hafnia, zirconates or hafnates
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B2237/00—Aspects relating to ceramic laminates or to joining of ceramic articles with other articles by heating
    • C04B2237/30—Composition of layers of ceramic laminates or of ceramic or metallic articles to be joined by heating, e.g. Si substrates
    • C04B2237/32—Ceramic
    • C04B2237/36—Non-oxidic
    • C04B2237/365—Silicon carbide
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B2237/00—Aspects relating to ceramic laminates or to joining of ceramic articles with other articles by heating
    • C04B2237/50—Processing aspects relating to ceramic laminates or to the joining of ceramic articles with other articles by heating
    • C04B2237/58—Forming a gradient in composition or in properties across the laminate or the joined articles
    • C04B2237/586—Forming a gradient in composition or in properties across the laminate or the joined articles by joining layers or articles of the same composition but having different densities
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B2237/00—Aspects relating to ceramic laminates or to joining of ceramic articles with other articles by heating
    • C04B2237/50—Processing aspects relating to ceramic laminates or to the joining of ceramic articles with other articles by heating
    • C04B2237/62—Forming laminates or joined articles comprising holes, channels or other types of openings
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B2237/00—Aspects relating to ceramic laminates or to joining of ceramic articles with other articles by heating
    • C04B2237/50—Processing aspects relating to ceramic laminates or to the joining of ceramic articles with other articles by heating
    • C04B2237/70—Forming laminates or joined articles comprising layers of a specific, unusual thickness
    • C04B2237/704—Forming laminates or joined articles comprising layers of a specific, unusual thickness of one or more of the ceramic layers or articles
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
    • H05B2203/00—Aspects relating to Ohmic resistive heating covered by group H05B3/00
    • H05B2203/013—Heaters using resistive films or coatings
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
    • H05B2203/00—Aspects relating to Ohmic resistive heating covered by group H05B3/00
    • H05B2203/017—Manufacturing methods or apparatus for heaters

Definitions

  • the invention relates to the technical field of electronic cigarettes, in particular to an electronic atomization device, an atomization core and a preparation method thereof.
  • Electronic cigarettes have a similar appearance and taste to cigarettes, but generally do not contain other harmful ingredients such as tar and suspended particles in cigarettes, which greatly reduces the harm to the user's body. Therefore, they are mostly used as substitutes for cigarettes for smoking cessation.
  • the safety of electronic cigarettes is its primary consideration.
  • the atomization core of electronic cigarettes will inevitably have the risk of powder loss due to repeated thermal cycles and smoke oil erosion.
  • the atomization core in a high-temperature environment has heavy metals inside and heavy metals in the heating film. The airflow is brought into the air when sucking, which will bring safety hazards to the health of the user.
  • the invention provides an electronic atomization device, an atomization core and a preparation method thereof, so as to solve the technical problems of the atomization core powder dropping and heavy metal sucking out in the prior art.
  • a technical solution adopted by the present utility model is to provide an atomizing core of an electronic atomizing device, including: a porous ceramic substrate, a ceramic covering layer and a heating film.
  • the ceramic covering layer is bonded to the The surface of the porous ceramic substrate, the heating film is bonded to the surface of the ceramic coating layer away from the porous ceramic substrate, the porosity of the ceramic coating layer is lower than the porosity of the porous ceramic substrate, so A plurality of penetrating holes are formed on the ceramic covering layer.
  • the porosity of the porous ceramic substrate is 40%-80%; and/or the average pore diameter of the micropores on the porous ceramic substrate is 10 ⁇ m-40 ⁇ m; and/or used to form the porous ceramic substrate.
  • the material of the ceramic substrate is zirconia, silicon oxide, alumina or mullite; and/or the thickness of the porous ceramic substrate is 1-4 mm.
  • the porosity of the ceramic coating layer is 10%-20%; and/or the material used to form the ceramic coating layer is zirconia, silicon oxide, aluminum oxide, silicon carbide or mullite; and /Or the thickness of the ceramic coating layer is 0.05-0.2 mm; and/or the powder particle size of the material used to form the ceramic coating layer is 0.1-5 ⁇ m.
  • the diameter of each of the holes is 5-50 ⁇ m.
  • the ratio of the total area of the openings of the plurality of holes to the area of the cross section of the ceramic covering layer perpendicular to the extending direction of the holes is 5% to 15%.
  • the powder particle size of the material used to form the ceramic coating layer is 0.1-5 ⁇ m.
  • the heating film is made of metal or alloy; and/or the thickness of the heating film is 2-10 ⁇ m.
  • the heating film includes a first covering film and a second covering film; wherein the first covering film is laminated on the surface of the ceramic covering layer away from the porous ceramic substrate, and the second covering The film is laminated on the surface of the first covering film away from the ceramic covering layer.
  • the first covering film and the second covering film are metal or alloy.
  • Another technical solution adopted by the present invention is to provide a method for preparing an atomizing core of an electronic atomizing device.
  • the preparation method includes: preparing a porous ceramic substrate; preparing a ceramic cover layer; A plurality of holes penetrating the ceramic coating layer are formed on the ceramic coating layer, wherein the porosity of the ceramic coating layer is lower than the porosity of the porous ceramic substrate; The ceramic covering layer is laminated and combined into an integral structure; and a heating film is formed on the surface of the ceramic covering layer away from the porous ceramic substrate.
  • the step of preparing the porous ceramic substrate includes: preparing the raw material for forming the porous ceramic substrate into a first casting slurry; forming the porous ceramic substrate through a casting process, and the porous ceramic
  • the thickness of the substrate is 1-4 mm.
  • the step of preparing the ceramic coating layer includes: preparing the raw material for forming the ceramic coating layer into a second casting slurry, and the powder particle size of the material used for forming the ceramic coating layer is 0.1-5 ⁇ m;
  • the ceramic covering layer is made by a casting process or a dry pressing process, and the thickness of the ceramic covering layer is 0.05-0.2 mm.
  • the step of stacking and combining the porous ceramic substrate and the ceramic coating layer into an integrated structure includes: bonding the porous ceramic substrate and the ceramic coating layer by bonding or sintering. Make a connection.
  • the step of forming a heating film on the surface of the ceramic covering layer away from the porous ceramic substrate includes: applying PVD, CVD, electroplating, electrodeposition, ion plating or spraying on the ceramic covering layer
  • the heating film is formed on the surface away from the porous ceramic substrate, and the thickness of the heating film is 2-10 ⁇ m.
  • the step of forming a heating film on the surface of the ceramic covering layer away from the porous ceramic substrate includes: applying PVD, CVD, electroplating, electrodeposition, ion plating or spraying on the ceramic covering layer
  • a first covering film is formed on the surface away from the porous ceramic substrate;
  • a second covering film is formed on the surface of the first covering film away from the ceramic covering layer by means of PVD, CVD, electroplating, electrodeposition, ion plating or spraying Film; the first cover film and the second cover film form a heating film.
  • the first covering film and the second covering film are metal or alloy.
  • an electronic atomization device which includes a liquid storage cavity for storing e-liquid and the atomization core described above,
  • the smoke liquid in the liquid storage cavity can be transferred to the ceramic covering layer through the porous ceramic substrate.
  • the embodiment of the present invention combines a ceramic coating layer with a porosity lower than that of the porous ceramic substrate on the surface of the porous ceramic substrate close to the heating element.
  • the lower ceramic coating layer is more dense and has no powder falling, so it can prevent the phenomenon of powder falling from the atomizing core; moreover, because the ceramic coating layer with lower porosity can isolate the precipitation of heavy metals inside the porous ceramic substrate, Therefore, it is possible to prevent heavy metals from being carried into the air flow during suction, thereby improving the safety performance of the electronic atomization device.
  • Fig. 1 is a schematic cross-sectional structure diagram of an atomizing core in an embodiment of the present invention
  • Fig. 2 is a schematic cross-sectional view of the atomization core in Fig. 1 taken along the I-I direction;
  • Figure 3 is a partial enlarged schematic view of a cross-sectional structure of an atomizing core in another embodiment of the present invention.
  • FIG. 4 is a schematic flow chart of a method for preparing an atomizing core in an embodiment of the present invention
  • FIG. 5 is a schematic diagram of a manufacturing process flow corresponding to the manufacturing process in FIG. 4;
  • FIG. 6 is a schematic flowchart of step S105 in FIG. 4;
  • Fig. 7 is a schematic flow chart of a method for preparing an atomizing core in another embodiment of the present invention.
  • FIG. 8 is a schematic diagram of a processing process flow corresponding to the production flow in FIG. 7.
  • FIG. 1 is a schematic cross-sectional structure diagram of an atomizing core in an embodiment of the present invention.
  • the utility model provides an atomization core 100 of an electronic atomization device.
  • the atomization core 100 includes a porous ceramic substrate 10, a ceramic covering layer 20 and a heating film 30.
  • the ceramic coating layer 20 is bonded to the surface of the porous ceramic substrate 10, the heating film 30 is bonded to the surface of the ceramic coating layer 20 away from the porous ceramic substrate 10, and the porosity of the ceramic coating layer 20 is lower than that of the porous ceramic substrate 10.
  • a plurality of through holes 21 are formed on the ceramic covering layer 20.
  • the porosity refers to the ratio of the total volume of the micro voids in the porous medium to the total volume of the porous medium.
  • the combination of the ceramic cover layer 20 on the surface of the porous ceramic substrate 10 specifically refers to that the ceramic cover layer 20 is bonded to the surface of the porous ceramic substrate 10 close to the heating element, so as to prevent the porous ceramic substrate 10 from directly contacting the heating element. As shown in FIG. 1, in this embodiment, the ceramic covering layer 20 is bonded to the upper surface of the porous ceramic substrate 10.
  • the embodiment of the present invention combines a ceramic covering layer 20 with a lower porosity than the porous ceramic substrate 10 on the surface of the porous ceramic substrate 10 close to the heating element.
  • the ceramic covering layer 20 with lower porosity is denser. There is no powder falling phenomenon, so it can prevent the atomization core 100 from falling powder; moreover, because the ceramic coating layer 20 with low porosity can isolate the precipitation of heavy metals in the porous ceramic substrate 10, it can prevent heavy metals from being sucked. Time is brought into the airflow, thereby improving the safety performance of the electronic atomization device.
  • the material used to form the porous ceramic substrate 10 may be zirconia, silicon oxide, aluminum oxide or mullite, etc.
  • the material used to form the ceramic coating layer 20 may be zirconia, silicon oxide, aluminum oxide, Silicon carbide or mullite, etc.
  • the material of the porous ceramic substrate 10 may be the same or different from the material of the ceramic coating layer 20.
  • the embodiment of the present invention does not limit the material of the porous ceramic substrate 10 and the ceramic coating layer 20.
  • the porosity of the porous ceramic substrate 10 may be 40%-80%.
  • the size of the porosity can be adjusted according to the composition of the smoke liquid. For example, when the viscosity of the smoke liquid is relatively large, a higher porosity is selected to ensure the liquid guiding effect.
  • the porosity of the porous ceramic substrate 10 is 50-60%.
  • the porosity of the porous ceramic substrate 10 is 50-60%.
  • the average pore diameter of the micropores on the porous ceramic substrate 10 is 10 ⁇ m-40 ⁇ m.
  • it may be 10 ⁇ m, 15 ⁇ m, 20 ⁇ m, 25 ⁇ m, 30 ⁇ m, 35 ⁇ m, or 40 ⁇ m, etc., which is not specifically limited in the embodiment of the present invention.
  • the porous ceramic substrate 10 can conduct liquid uniformly and achieve better atomization effect.
  • the thickness of the porous ceramic substrate 10 is 1-4 mm.
  • the thickness of the porous ceramic substrate 10 refers to the length of the porous ceramic substrate 10 along the direction in which the porous ceramic substrate 10 and the ceramic coating layer 20 are laminated.
  • the laminating direction of the porous ceramic substrate 10 and the ceramic coating layer 20 is the X direction shown in FIG. 1, and the thickness H of the porous ceramic substrate 10 in the X direction is 1-4 mm.
  • the thickness H of the porous ceramic substrate 10 in the X direction may be 1 mm, 1.5 mm, 2 mm, 2.5 mm, 3 mm, 3.5 mm, or 4 mm, etc., which is not specifically limited in the embodiment of the present invention.
  • the porosity of the ceramic covering layer 20 is 10%-20%.
  • the porosity of the ceramic coating layer 20 is lower than that of the porous ceramic substrate 10, and a dense ceramic coating layer 20 is formed on the surface of the porous ceramic substrate 10.
  • the porosity of the ceramic covering layer 20 may be 10-18%, 10-16%, 10-14%, 10-12%, 12-18%, 12-16%, 12-14%, 14-16%, 14-18%, or 16-18%, etc.
  • the porosity of the porous ceramic substrate 10 is 50-60%, and the porosity of the ceramic covering layer 20 is 14-16%.
  • the thickness of the ceramic covering layer 20 is 0.05-0.2 mm.
  • the thickness of the ceramic coating layer 20 refers to the length of the ceramic coating layer 20 along the laminating direction of the porous ceramic substrate 10 and the ceramic coating layer 20.
  • the laminating direction of the porous ceramic substrate 10 and the ceramic coating layer 20 is the X direction shown in FIG. 1, and the thickness R of the ceramic coating layer 20 in the X direction is 0.05-0.2 mm.
  • the thickness R of the ceramic covering layer 20 in the X direction may be 0.05 mm, 0.07 mm, 0.09 mm, 0.11 mm, 0.13 mm, 0.15 mm, 0.17 mm, or 0.2 mm, etc., which is not specifically limited in the embodiment of the present invention.
  • the powder particle size of the material used to form the ceramic coating layer 20 is 0.1-5 ⁇ m.
  • the powder size is also called the particle size, which refers to the size of the space occupied by the particles.
  • the powder particle size is a single parameter: diameter D.
  • the powder particle size can be expressed by the projection height H (arbitrary), the maximum length M, the horizontal width W, the diameter of a ball of equal volume, or the diameter D of a ball with equal surface area.
  • the powder particle size of the material used to form the ceramic coating layer 20 may be 0.1 ⁇ m, 0.5 ⁇ m, 1 ⁇ m, 1.5 ⁇ m, 2 ⁇ m, 2.5 ⁇ m, 3 ⁇ m, 3.5 ⁇ m, or 4 ⁇ m, etc.
  • the embodiment of the present invention does not make specific details. limited.
  • the ceramic coating layer 20 can effectively isolate the heavy metals from being sucked out by providing the ceramic coating layer 20 with a suitable thickness, the pore size of the micropores with suitable size and uniform distribution, and the raw materials with a small powder particle size.
  • Fig. 2 is a schematic cross-sectional view of the atomization core in Fig. 1 taken along the I-I direction.
  • the diameter of each hole 21 formed on the ceramic covering layer 20 is 5-50 ⁇ m.
  • the diameter of the hole 21 may be 5 ⁇ m, 10 ⁇ m, 15 ⁇ m, 20 ⁇ m, 25 ⁇ m, 30 ⁇ m, 35 ⁇ m, 40 ⁇ m, 45 ⁇ m, 50 ⁇ m, etc., which are not specifically limited in the embodiment of the present invention.
  • the pores 21 on the ceramic coating layer 20 do not belong to the tiny voids in the porous medium, and the existence of the pores 21 does not affect the porosity of the ceramic coating layer 20; in other words, the porosity of the ceramic coating layer 20 is similar to that of the ceramic
  • the multiple holes 21 formed on the cover layer 20 are irrelevant.
  • a plurality of holes 21 are formed on the ceramic covering layer 20, and each hole 21 penetrates the ceramic covering layer 20 along the laminating direction of the porous ceramic substrate 10 and the ceramic covering layer 20.
  • the ceramic coating layer 20 can facilitate liquid conduction.
  • the diameters of the multiple holes 21 formed on the same ceramic coating layer 20 may be equal or unequal, which is not specifically limited in the embodiment of the present invention.
  • a plurality of holes 21 are arranged in an array on the ceramic covering layer 20.
  • the plurality of holes 21 may also be distributed in a ring shape, and the embodiment of the present invention does not specifically limit the arrangement of the plurality of holes 21.
  • the holes 21 formed on the ceramic covering layer 20 are circular holes.
  • the shape of the hole 21 may also be a rectangle, an ellipse, a triangle, a diamond, a regular or irregular polygonal hole, etc., which is not specifically limited in the embodiment of the present invention.
  • the ratio of the total area of the openings of the plurality of holes 21 to the area of the cross section of the ceramic covering layer 20 perpendicular to the extending direction of the holes 21 is 5% to 15%.
  • the ratio of the total area of the openings of the plurality of holes 21 to the area of the cross section of the ceramic covering layer 20 perpendicular to the extending direction of the holes 21 may be 5-12%, 5-10%, 5-8%, 7- 12%, 7-10%, 9-12%, 10-12%, 7-15%, 9-15%, 12-15%, or 14-15%, etc., which are not specifically limited in the embodiment of the present invention.
  • the extending direction of the hole 21 is the axial direction of the circular hole, and the axial direction of the circular hole is parallel to the X direction. Therefore, the cross section of the ceramic coating layer 20 perpendicular to the extending direction of the hole 21 refers to the cross section of the ceramic coating layer 20 perpendicular to the X direction, that is, the cross section as shown in FIG. 2.
  • the sum of the area of the openings of the plurality of holes 21 refers to the area of the blank area shown in the figure, and the sum of the area of the openings of the plurality of holes 21 occupies the area of the cross section of the ceramic covering layer 20 perpendicular to the extending direction of the holes 21
  • the ratio refers to the ratio of the area of the blank area in Figure 2 to the area of the entire cross-section.
  • the heating film 30 is bonded to the surface of the ceramic covering layer 20 away from the porous ceramic substrate 10, and the heating film 30 is used for electrically connecting with the electrode, and for generating heat to atomize the smoke liquid.
  • the thickness of the heating film 30 may be 2-10 ⁇ m.
  • the thickness of the heating film 30 refers to the length of the heating film 30 in the direction in which the porous ceramic substrate 10 and the ceramic coating layer 20 are laminated.
  • the thickness of the heating film 30 is L, where the thickness L can specifically be 2 ⁇ m, 3 ⁇ m, 4 ⁇ m, 5 ⁇ m, 6 ⁇ m, 7 ⁇ m, 8 ⁇ m, 9 ⁇ m, 9.5 ⁇ m, or 10 ⁇ m, etc., which is not used in the embodiment of the present invention. Specific restrictions.
  • FIG. 3 is a partially enlarged schematic diagram of the cross-sectional structure of the atomization core in another embodiment of the present invention.
  • the heat generating film 30 may include a first cover film 32 and a second cover film 34.
  • the first covering film 32 is stacked on the surface of the ceramic covering layer 20 away from the porous ceramic substrate 10, and the second covering film 34 is stacked on the surface of the first covering film 32 away from the ceramic covering layer 20.
  • the first covering film 32 may be a metal or an alloy.
  • the material of the first cover film 32 can be selected from a material that has a relatively stable bond with the porous ceramic substrate 10.
  • the first covering film 32 may be titanium, zirconium, titanium aluminum alloy, titanium zirconium alloy, titanium molybdenum alloy, titanium niobium alloy, iron aluminum alloy, or tantalum aluminum alloy.
  • the titanium-zirconium alloy membrane made of titanium-zirconium alloy itself is a locally dense membrane, but because the porous ceramic substrate 10 itself has a porous structure, the titanium-zirconium alloy membrane formed on the surface of the porous ceramic substrate 10 also becomes a porous continuous structure.
  • the pore size distribution of the titanium-zirconium alloy membrane is slightly smaller than that of the surface micropores of the porous ceramic substrate 10.
  • the titanium-zirconium alloy film in the titanium-zirconium alloy film has poor stability in the air at high temperatures, zirconium easily absorbs hydrogen, nitrogen, and oxygen, and the zirconium-titanium alloy has more gettering properties.
  • the gettering properties of the titanium-zirconium alloy will cause a violent oxidation reaction to occur during high-temperature sintering (above 300° C.), causing a sudden change in the resistance of the first cover film 32.
  • a protective layer needs to be made on the surface of the first cover film 32.
  • the second cover film 34 can serve as a protective layer.
  • the second covering film 34 may also be a metal or an alloy.
  • the second covering film 34 should be made of a material with strong oxidation resistance.
  • the second covering film 34 may be platinum, palladium, palladium-copper alloy, gold-silver-platinum alloy, gold-silver alloy, palladium-silver alloy, gold-platinum alloy, or the like.
  • the protective layer formed by silver and platinum is relatively loose and compact, it is difficult to completely isolate the air.
  • gold can protect the titanium-zirconium alloy film very well, on the one hand, the thickness of about 100nm or more is required to form a dense protective layer, which will greatly reduce the resistance of the entire heating element, and the cost is high. Therefore, the present embodiment adopts the gold-silver alloy, which not only retains the compactness of the gold protective layer, but also reduces the cost, and when alloyed in a certain proportion, the resistivity of the gold-silver alloy is increased tenfold, which is more conducive to controlling the entire heating element The resistance value.
  • the present invention also provides a method for preparing the atomization core of the electronic atomization device, and the preparation method can be used to prepare and form the atomization core 100 in the above-mentioned embodiment.
  • FIGS. 4 and 5 FIGS. 4 and 5
  • FIG. 4 is a schematic flow diagram of a method for preparing an atomizing core in an embodiment of the present invention
  • FIG. 5 is a schematic diagram of a processing process corresponding to the production flow in FIG.
  • the preparation method of the atomizing core 100 includes the following steps:
  • Step S101 preparing a porous ceramic substrate 10.
  • the raw material used to form the porous ceramic substrate 10 is made into a first casting slurry.
  • the raw material used to form the porous ceramic substrate 10 may be zirconia, silica, alumina, or mullite, etc. At least one of the above raw materials is mixed to form a first casting slurry.
  • the first casting slurry is cast into a porous ceramic substrate 10 through a casting process.
  • the casting time can be controlled so that the thickness of the porous ceramic substrate 10 is 1-4 mm.
  • Step S102 preparing the ceramic coating layer 20, and forming a plurality of pores penetrating the ceramic coating layer 20 on the ceramic coating layer 20, wherein the porosity of the ceramic coating layer 20 is lower than the porosity of the porous ceramic substrate 10.
  • the raw material for forming the ceramic coating layer 20 is made into a second casting slurry.
  • the material used to form the ceramic coating layer 20 may be zirconia, silicon oxide, aluminum oxide, silicon carbide, or mullite, etc., and the powder particle size of the material used to form the ceramic coating layer 20 is 0.1-5 ⁇ m. At least one of the above raw materials is mixed to form a second casting slurry.
  • the second casting slurry may be cast to form the ceramic coating layer 20 by a casting process.
  • the casting time can be controlled so that the thickness of the ceramic coating layer 20 is 0.05-0.2 mm.
  • the second casting slurry may be pressed through a dry pressing process to form the ceramic covering layer 20, which is not specifically limited in the embodiment of the present invention.
  • each hole 21 is 5-50 ⁇ m, and the total area of the plurality of holes 21 accounts for 5%-15% of the area of the cross section of the ceramic covering layer 20 perpendicular to the extending direction of the holes 21.
  • laser drilling CNC (Computerized Numerical Control, computer numerical control) precision drilling, selective etching hole formation, etc. can be used to directly form a plurality of holes 21 penetrating the ceramic covering layer 20 on the ceramic covering layer 20.
  • CNC Computerized Numerical Control, computer numerical control
  • selective etching hole formation, etc. can be used to directly form a plurality of holes 21 penetrating the ceramic covering layer 20 on the ceramic covering layer 20.
  • the drilling method is simple, and the depth uniformity of the holes 21 on the formed atomizing core 100 is relatively high.
  • the diameters of the multiple holes 21 formed on the same ceramic coating layer 20 may be equal or unequal.
  • the shape of the hole 21 formed on the ceramic covering layer 20 may be a circle, a rectangle, an ellipse, a triangle, a diamond, a regular or irregular polygonal hole, etc., which is not specifically limited in the embodiment of the present invention.
  • the porous ceramic substrate 10 is prepared first, and then the ceramic covering layer 20 is prepared. Understandably, in another embodiment, the ceramic covering layer 20 may be prepared first, and then the porous ceramic substrate 10 may be prepared. Alternatively, in another embodiment, the ceramic covering layer 20 and the porous ceramic substrate 10 can also be prepared at the same time, which is not specifically limited in the embodiment of the present invention.
  • step S101 and step S102 After performing step S101 and step S102 to obtain the porous ceramic substrate 10 and the ceramic covering layer 20, the following steps are then performed:
  • Step S103 The porous ceramic substrate 10 and the ceramic covering layer 20 are stacked and combined into an integrated structure.
  • the ceramic covering layer 20 may be laminated on one side of the porous ceramic substrate 10, and the ceramic covering layer 20 and the porous ceramic substrate 10 may be connected and fixed by bonding.
  • the ceramic coating layer 20 can also be laminated on one side of the porous ceramic substrate 10, and the porous ceramic substrate 10 and the ceramic coating layer 20 can be connected by sintering.
  • sintering refers to the interconnection of the solid particles of the ceramic green body at high temperature (not higher than the melting point), the crystal grains grow, the voids (pores) and the grain boundaries gradually decrease, and the total volume shrinks through the transfer of materials. , The density increases, and finally becomes a dense polycrystalline sintered body with a certain microstructure.
  • the ceramic covering layer 20 and the porous ceramic substrate 10 are connected by sintering. Since no harmful substances are generated, the safety performance of the atomizing core 100 can be improved.
  • step S103 is performed to obtain the integrated porous ceramic substrate 10 and the ceramic covering layer 20
  • the method further includes:
  • Step S104 forming a heating film 30 on the surface of the ceramic covering layer 20 away from the porous ceramic substrate 10.
  • the thickness of the heating film is 2-10 ⁇ m.
  • the heating film 30 may be formed on the ceramic covering layer 20 by means of physical vapor deposition, electroplating, electrodeposition, ion plating, spraying, chemical vapor deposition, or the like.
  • physical vapor deposition electroplating
  • electrodeposition ion plating
  • spraying chemical vapor deposition
  • the thickness of the heating film is 2-10 ⁇ m.
  • the heating film 30 may be formed on the ceramic covering layer 20 by means of physical vapor deposition, electroplating, electrodeposition, ion plating, spraying, chemical vapor deposition, or the like.
  • FIG. 6 is a schematic flowchart of step S105 in FIG. 4.
  • the step of forming a heating film 30 on the surface of the ceramic covering layer 20 away from the porous ceramic substrate 10 includes:
  • Step S201 forming a first covering film 32 on the surface of the ceramic covering layer 20 away from the porous ceramic substrate 10.
  • the first covering film 32 may be a metal or an alloy.
  • the first covering film 32 can be made of a material with strong bonding force to the porous ceramic substrate 10.
  • the first covering film 32 may be titanium, zirconium, titanium aluminum alloy, titanium zirconium alloy, titanium molybdenum alloy, titanium niobium alloy, iron aluminum alloy, or tantalum aluminum alloy.
  • Step S202 forming a second covering film 34 on the surface of the first covering film 32 away from the ceramic covering layer 20.
  • the second covering film 34 may also be a metal or an alloy.
  • the second covering film 34 can be made of materials with strong oxidation resistance.
  • the second covering film 34 may be platinum, palladium, palladium-copper alloy, gold-silver-platinum alloy, gold-silver alloy, palladium-silver alloy, gold-platinum alloy, or the like.
  • the first cover film 32 and the second cover film 34 may adopt PVD (Physical Vapor Deposition), CVD (Chemical Vapor Deposition, vapor phase reaction), electroplating, electrodeposition, ion plating, or spraying in sequence. It is formed on the surface of the ceramic covering layer 20 away from the porous ceramic substrate 10.
  • the first cover film 32 and the second cover film 34 formed in the above manner have a thinner thickness, a larger area, and a uniform distribution. Therefore, when the heating film 30 is electrically connected to the electrode, not only can the heating film 30 generate heat It is uniform, has a large heating area, and has a high heat utilization rate; and it can also greatly reduce the suction of heavy metals inside the atomizing core 100, thereby improving the safety performance.
  • FIG. 7 is a schematic flow diagram of a method for preparing an atomizing core in another embodiment of the present invention
  • FIG. 8 is a processing corresponding to the production flow in FIG. 7 Schematic diagram of the process flow.
  • the preparation method of the atomizing core 100 in this embodiment includes:
  • Step S301 preparing the porous ceramic substrate 10.
  • Step S302 preparing the ceramic coating layer 20, wherein the porosity of the ceramic coating layer 20 is lower than the porosity of the porous ceramic substrate 10.
  • Step S303 The porous ceramic substrate 10 and the ceramic covering layer 20 are stacked and combined into an integrated structure.
  • Step S304 forming a plurality of holes 21 on the ceramic covering layer 20.
  • Step S305 forming a heating film 30 on the surface of the ceramic covering layer 20 away from the porous ceramic substrate 10.
  • step S301 is roughly the same as step S101 in the above embodiment
  • step S303 is roughly the same as step S103 in the above embodiment
  • step S305 is roughly the same as step S104 in the above embodiment.
  • the difference between this embodiment and the foregoing embodiment is that: in this embodiment, the multiple holes 21 on the ceramic coating layer 20 are not formed when the ceramic coating layer 20 is prepared, but when the porous ceramic substrate 10 and After the ceramic covering layer 20 is combined to form an integrated structure, a hole is formed on the side where the ceramic covering layer 20 is located.
  • the depth of the perforation equal to the thickness of the ceramic coating layer 20, and then start drilling from the side where the ceramic coating layer 20 is located to drill holes in the integrated porous ceramic substrate. 10 and the ceramic covering layer 20 are formed with a plurality of blind holes.
  • the method of punching and the size of the hole are the same as those in the above embodiment, please refer to the description in the above embodiment.
  • the utility model also provides an electronic atomization device.
  • the electronic atomization device includes a liquid storage cavity for storing smoke liquid and an atomization core, and the smoke liquid in the liquid storage cavity can be transferred to the ceramic covering layer through the porous ceramic substrate.
  • the structure of the atomizing core in this embodiment is the same as the structure of the atomizing core in the foregoing embodiment, please refer to the description in the foregoing embodiment, and will not be repeated here.
  • the ceramic with lower porosity is denser and does not have powder falling, so it can prevent the atomization core 100 from falling powder; moreover, the ceramic coating layer 20 with lower porosity can isolate the precipitation of heavy metals in the porous ceramic substrate 10, Therefore, it is possible to prevent heavy metals from being carried into the air flow during suction, thereby improving the safety performance of the electronic atomization device.

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Abstract

一种电子雾化装置、雾化芯（100）及其制备方法。雾化芯（100）包括多孔陶瓷基材（10）、陶瓷覆盖层（20）及发热膜（30），陶瓷覆盖层（20）结合于多孔陶瓷基材（10）的表面，发热膜（30）结合于陶瓷覆盖层（20）远离多孔陶瓷基材（10）的表面，陶瓷覆盖层（20）的孔隙率低于多孔陶瓷基材（10）的孔隙率，陶瓷覆盖层（20）上形成有多个贯穿的孔洞（21）。通过在多孔陶瓷基材（10）的靠近发热元件的表面上结合一孔隙率低于多孔陶瓷基材（10）的陶瓷覆盖层（20），由于孔隙率较低的陶瓷覆盖层（20）致密度更高不存在掉粉现象，故而可以防止雾化芯（100）发生掉粉的现象；而且，由于孔隙率较低的陶瓷覆盖层（20）可以隔绝多孔陶瓷基材（10）内部重金属的析出，故而可以防止重金属在抽吸时被带入气流，从而提升电子雾化装置的安全性能。

Description

电子雾化装置、雾化芯及其制备方法 【技术领域】
本发明涉及电子烟技术领域，具体涉及一种电子雾化装置、雾化芯及其制备方法。
【背景技术】
电子烟具有与香烟相似的外观和味道，但一般不含香烟中的焦油、悬浮微粒等其它有害成分，大大减少了对使用者身体的危害，因而多作为香烟的替代品，用于戒烟。电子烟的安全性是其首要考虑的因素。
目前，在抽吸过程中，电子烟的雾化芯由于反复热循环和烟油侵蚀，难免会存在掉粉的风险；另外，高温环境下的雾化芯，其内部重金属及发热膜内重金属会在抽吸时被带入气流，这些均会给用户健康带来安全隐患。
【发明内容】
本发明提供一种电子雾化装置、雾化芯及其制备方法，以解决现有技术中雾化芯掉粉及重金属吸出的技术问题。
为解决上述技术问题，本实用新型采用的一个技术方案是：提供一种电子雾化装置的雾化芯，包括：多孔陶瓷基材、陶瓷覆盖层及发热膜，所述陶瓷覆盖层结合于所述多孔陶瓷基材的表面，所述发热膜结合于所述陶瓷覆盖层远离所述多孔陶瓷基材的表面，所述陶瓷覆盖层的孔隙率低于所述多孔陶瓷基材的孔隙率，所述陶瓷覆盖层上形成有多个贯穿的孔洞。
可选地，所述多孔陶瓷基材的孔隙率为40％-80％；和/或所述多孔陶瓷基材上的微孔的平均孔径为10μm-40μm；和/或用于形成所述多孔陶瓷基材的材料为氧化锆、氧化硅、氧化铝或莫来石；和/或所述多孔陶瓷基材的厚度为1-4mm。
可选地，所述陶瓷覆盖层的孔隙率为10％-20％；和/或用于形成所述陶瓷覆盖层的材料为氧化锆、氧化硅、氧化铝、碳化硅或莫来石；和/或所述陶瓷覆盖层的厚度为0.05-0.2mm；和/或用于形成所述陶瓷覆盖层的材料的粉末粒度为0.1-5μm。
可选地，每一所述孔洞的直径为5-50μm。
可选地，多个所述孔洞的开口的面积之和占所述陶瓷覆盖层垂直于所述孔洞的延伸方向的横截面的面积的比例为5％-15％。
可选地，用于形成所述陶瓷覆盖层的材料的粉末粒度为0.1-5μm。
可选地，所述发热膜由金属或者合金制成；和/或所述发热膜的厚度为2-10μm。
可选地，所述发热膜包括第一覆盖膜和第二覆盖膜；其中，所述第一覆盖膜层叠设置于所述陶瓷覆盖层远离所述多孔陶瓷基材的表面，所述第二覆盖膜层叠设置于所述第一覆盖膜远离所述陶瓷覆盖层的表面。
可选地，所述第一覆盖膜和所述第二覆盖膜为金属或合金。
为解决上述技术问题，本发明采用的另一个技术方案是：提供一种电子雾化装置的雾化芯的制备方法，所述制备方法包括：制备多孔陶瓷基材；制备陶瓷覆盖层，并在所述陶瓷覆盖层上形成多个贯穿所述陶瓷覆盖层的孔洞，其中，所述陶瓷覆盖层的孔隙率低于所述多孔陶瓷基材的孔隙率；将所述多孔陶瓷基材和所述陶瓷覆盖层层叠设置并结合成一体结构；和在所述陶瓷覆盖层远离所述多孔陶瓷基材的表面形成发热膜。
可选地，所述制备多孔陶瓷基材的步骤包括：将用于形成多孔陶瓷基材的原材料制成第一流延浆料；通过流延工艺制成所述多孔陶瓷基材，所述多孔陶瓷基材的厚度为1-4mm。
可选地，所述制备陶瓷覆盖层的步骤包括：将用于形成陶瓷覆盖层的原材料制成第二流延浆料，用于形成所述陶瓷覆盖层的材料的粉末粒度为0.1-5μm；通过流延工艺或者干压工艺制成所述陶瓷覆盖层，所述陶瓷覆盖层的厚度为0.05-0.2mm。
可选地，所述将所述多孔陶瓷基材和所述陶瓷覆盖层层叠设置并结 合成一体结构的步骤包括：通过粘接或烧结的方式将所述多孔陶瓷基材和所述陶瓷覆盖层进行连接。
可选地，所述在所述陶瓷覆盖层远离所述多孔陶瓷基材的表面形成发热膜的步骤包括：采用PVD、CVD、电镀、电沉积、离子镀或者喷涂的方式在所述陶瓷覆盖层远离所述多孔陶瓷基材的表面形成所述发热膜，所述发热膜的厚度为2-10μm。
可选地，所述在所述陶瓷覆盖层远离所述多孔陶瓷基材的表面形成发热膜的步骤包括：采用PVD、CVD、电镀、电沉积、离子镀或者喷涂的方式在所述陶瓷覆盖层远离所述多孔陶瓷基材的表面形成第一覆盖膜；采用PVD、CVD、电镀、电沉积、离子镀或者喷涂的方式在所述第一覆盖膜远离所述陶瓷覆盖层的表面形成第二覆盖膜；所述第一覆盖膜和所述第二覆盖膜形成发热膜。
可选地，所述第一覆盖膜和所述第二覆盖膜为金属或合金。
为解决上述技术问题，本发明采用的又一个技术方案是：提供一种电子雾化装置，所述电子雾化装置包括用于存储烟液的储液腔和根据前文所述的雾化芯，所述储液腔中的烟液能够经所述多孔陶瓷基材传递至所述陶瓷覆盖层。
本发明的有益效果是：区别于现有技术的情况，本发明实施例通过在多孔陶瓷基材的靠近发热元件的表面上结合一孔隙率低于多孔陶瓷基材的陶瓷覆盖层，由于孔隙率较低的陶瓷覆盖层致密度更高不存在掉粉现象，故而可以防止雾化芯发生掉粉的现象；而且，由于孔隙率较低的陶瓷覆盖层可以隔绝多孔陶瓷基材内部重金属的析出，故而可以防止重金属在抽吸时被带入气流，从而提升电子雾化装置的安全性能。
【附图说明】
为了更清楚地说明本发明实施例中的技术方案，下面将对实施例描述中所需要使用的附图作简单地介绍，显而易见地，下面描述中的附图仅仅是本发明的一些实施例，对于本领域普通技术人员来讲，在不付出创造性劳动的前提下，还可以根据这些附图获得其它的附图，其中：
图1是本发明一实施例中的雾化芯的剖视结构示意图；
图2是图1中的雾化芯沿I-I方向截取后的剖视结构示意图；
图3是本发明另一实施例中的雾化芯的剖视结构局部放大示意图；
图4是本发明一实施例中的雾化芯的制备方法的流程示意图；
图5是与图4中的制作流程对应的加工工艺流程示意图；
图6是图4中的步骤S105的流程示意图；
图7是本发明另一实施例中的雾化芯的制备方法的流程示意图；
图8是与图7中的制作流程对应的加工工艺流程示意图。
【具体实施方式】
下面将结合本实用新型实施例中的附图，对本实用新型实施例中的技术方案进行清楚、完整地描述，显然，所描述的实施例仅是本实用新型的一部分实施例，而不是全部的实施例。基于本实用新型中的实施例，本领域普通技术人员在没有做出创造性劳动前提下所获得的所有其它实施例，都属于本实用新型保护的范围。
请参阅图1，图1是本实用新型一实施例中的雾化芯的剖视结构示意图。本实用新型提供一种电子雾化装置的雾化芯100，该雾化芯100包括多孔陶瓷基材10、陶瓷覆盖层20及发热膜30。陶瓷覆盖层20结合于多孔陶瓷基材10的表面，发热膜30结合于陶瓷覆盖层20远离多孔陶瓷基材10的表面，陶瓷覆盖层20的孔隙率低于多孔陶瓷基材10的孔隙率，陶瓷覆盖层20上形成有多个贯穿的孔洞21。
其中，孔隙率是指多孔介质内的微小空隙的总体积与该多孔介质的总体积的比值。陶瓷覆盖层20结合于多孔陶瓷基材10的表面具体是指，陶瓷覆盖层20结合于多孔陶瓷基材10的靠近发热元件的表面，以避免多孔陶瓷基材10直接与发热元件接触。如图1所示，在本实施例中，陶瓷覆盖层20结合于多孔陶瓷基材10的上表面上。
本实用新型实施例通过在多孔陶瓷基材10的靠近发热元件的表面上结合一孔隙率低于多孔陶瓷基材10的陶瓷覆盖层20，由于孔隙率较低的陶瓷覆盖层20致密度更高不存在掉粉现象，故而可以防止雾化芯 100发生掉粉的现象；而且，由于孔隙率较低的陶瓷覆盖层20可以隔绝多孔陶瓷基材10内部重金属的析出，故而可以防止重金属在抽吸时被带入气流，从而提升电子雾化装置的安全性能。
可选地，用于形成多孔陶瓷基材10的材料可以为氧化锆、氧化硅、氧化铝或莫来石等，用于形成陶瓷覆盖层20的材料可以为氧化锆、氧化硅、氧化铝、碳化硅或莫来石等。其中，多孔陶瓷基材10的材料可以与陶瓷覆盖层20的材料的种类相同也可以不同，本实用新型实施例不对多孔陶瓷基材10的材料和陶瓷覆盖层20的材料的种类进行限定。
可选地，多孔陶瓷基材10的孔隙率可以为40％-80％。孔隙率的大小可以根据烟液的成分来调整，例如当烟液的粘稠度较大时，选用较高的孔隙率，以保证导液效果。
在本实施例中，多孔陶瓷基材10的孔隙率为50-60％。通过将多孔陶瓷基材10的孔隙率控制在50-60％，一方面可以保障多孔陶瓷基材10具有较好的导液效率，防止出现烟液流通不畅而发生干烧的现象，以提升雾化效果。另一方面，可以避免多孔陶瓷基材10导液过快，难以锁液，导致漏液的概率大增。
可选地，多孔陶瓷基材10上的微孔的平均孔径为10μm-40μm。例如，可以为10μm、15μm、20μm、25μm、30μm、35μm或者40μm等，本实用新型实施例不做具体限定。
以上可选实施例，通过设置大小合适，分布均匀的微孔的孔径，可以使得多孔陶瓷基材10导液均匀，雾化效果更好。
可选地，多孔陶瓷基材10的厚度为1-4mm。其中，多孔陶瓷基材10的厚度指的是多孔陶瓷基材10沿多孔陶瓷基材10与陶瓷覆盖层20的层叠方向的长度。在本实施例中，多孔陶瓷基材10与陶瓷覆盖层20的层叠方向为图1中所示的X方向，多孔陶瓷基材10在X方向上的厚度H为1-4mm。通过设置厚度适宜的多孔陶瓷基材10，可以缩短导液路径，使得下液顺畅；另一方面也可以避免出现干烧的现象。
可选地，多孔陶瓷基材10在X方向上的厚度H可以为1mm、1.5mm、2mm、2.5mm、3mm、3.5mm或者4mm等，本实用新型实施例不做具 体限定。
可选地，陶瓷覆盖层20的孔隙率为10％-20％。在同一雾化芯100中，陶瓷覆盖层20的孔隙率低于多孔陶瓷基材10的孔隙率，进而在多孔陶瓷基材10的表面形成致密的陶瓷覆盖层20。在一实施例中，陶瓷覆盖层20的孔隙率可为10-18％、10-16％、10-14％、10-12％、12-18％、12-16％、12-14％、14-16％、14-18％或者16-18％等。在另一实施例中，多孔陶瓷基材10的孔隙率为50-60％，而陶瓷覆盖层20的孔隙率为14-16％。
可选地，陶瓷覆盖层20的厚度为0.05-0.2mm。其中，陶瓷覆盖层20的厚度指的是陶瓷覆盖层20沿多孔陶瓷基材10与陶瓷覆盖层20的层叠方向的长度。在本实施例中，多孔陶瓷基材10与陶瓷覆盖层20的层叠方向为图1中所示的X方向，陶瓷覆盖层20在X方向上的厚度R为0.05-0.2mm。例如，陶瓷覆盖层20在X方向上的厚度R可以为0.05mm、0.07mm、0.09mm、0.11mm、0.13mm、0.15mm、0.17mm或者0.2mm等，本实用新型实施例不做具体限定。
可选地，用于形成陶瓷覆盖层20的材料的粉末粒度为0.1-5μm。其中，粉末粒度也称颗粒粒度，指颗粒占据空间的尺度。对于一个球形颗粒，粉末粒度是单一的参数：直径D。对于一个形状不规则的颗粒，粉末粒度可以用投影高度H(任意)、最大长度M、水平宽度W、相等体积球的直径或具有相等表面积球的直径D来表达。
可选地，用于形成陶瓷覆盖层20的材料的粉末粒度可以为0.1μm、0.5μm、1μm、1.5μm、2μm、2.5μm、3μm、3.5μm或者4μm等，本实用新型实施例不做具体限定。
以上可选实施例，通过设置厚度适宜的陶瓷覆盖层20、大小合适且分布均匀的微孔的孔径以及粉末粒度较小的原材料，可以使得陶瓷覆盖层20能够有效隔绝重金属的吸出。
进一步地，如图1和图2所示，图2是图1中的雾化芯沿I-I方向截取后的剖视结构示意图。形成于陶瓷覆盖层20上的每一孔洞21的直径为5-50μm。例如，孔洞21的直径可以为5μm、10μm、15μm、20μm、 25μm、30μm、35μm、40μm、45μm或者50μm等，本实用新型实施例不做具体限定。需要说明的是，陶瓷覆盖层20上的孔洞21并不属于多孔介质内的微小空隙，孔洞21的存在不影响陶瓷覆盖层20的孔隙率；换句话说，陶瓷覆盖层20的孔隙率与陶瓷覆盖层20上形成的多个孔洞21无关。
具体地，在陶瓷覆盖层20上形成有多个孔洞21，每一孔洞21均沿多孔陶瓷基材10与陶瓷覆盖层20的层叠方向贯穿陶瓷覆盖层20。通过在陶瓷覆盖层20上形成多个贯穿的孔洞21，可以便于陶瓷覆盖层20进行导液。
可选地，形成于同一陶瓷覆盖层20上的多个孔洞21的直径可以相等，也可以不等，本实用新型实施例不做具体限定。
其中，在本实施例中，如图2所示，多个孔洞21阵列排布在陶瓷覆盖层20上。在另一实施例中，多个孔洞21还可以呈环形分布，本实用新型实施例不对多个孔洞21的排布方式进行具体限定。
可选地，在本实施例中，形成在陶瓷覆盖层20上的孔洞21为圆形孔。在其它的实施例中，孔洞21的形状还可以为矩形、椭圆形、三角形、菱形以及规则或者不规则多边形孔等，本实用新型实施例不做具体限定。
进一步地，多个孔洞21的开口的面积之和占陶瓷覆盖层20垂直于孔洞21的延伸方向的横截面的面积的比例为5％-15％。例如，多个孔洞21的开口的面积之和占陶瓷覆盖层20垂直于孔洞21的延伸方向的横截面的面积的比例可为5-12％、5-10％、5-8％、7-12％、7-10％、9-12％、10-12％、7-15％、9-15％、12-15％或者14-15％等，本实用新型实施例不做具体限定。
具体地，在本实施例中，如图1所示，孔洞21的延伸方向为圆形孔的轴线方向，圆形孔的轴线方向与X方向平行。故而，陶瓷覆盖层20垂直于孔洞21的延伸方向的横截面指的是陶瓷覆盖层20垂直于X方向的横截面，即，如图2中所示的横截面。多个孔洞21的开口的面积之和即是指图中所示的空白区域的面积，多个孔洞21的开口的面积 之和占陶瓷覆盖层20垂直于孔洞21的延伸方向的横截面的面积的比例即是指，图2中的空白区域的面积占整个横截面的面积的比例。
进一步地，如图1所示，发热膜30结合于陶瓷覆盖层20远离多孔陶瓷基材10的表面，发热膜30用于与电极电连接，并用于发热以雾化烟液。
可选地，发热膜30的厚度可以为2-10μm。其中，发热膜30的厚度指的是发热膜30沿多孔陶瓷基材10和陶瓷覆盖层20的层叠方向的长度。如图1所示，发热膜30的厚度为L，其中，厚度L具体可以为2μm、3μm、4μm、5μm、6μm、7μm、8μm、9μm、9.5μm或者10μm等，本实用新型实施例不做具体限定。
可选地，如图3所示，图3是本实用新型另一实施例中的雾化芯的剖视结构局部放大示意图。发热膜30可以包括第一覆盖膜32和第二覆盖膜34。其中，第一覆盖膜32层叠设置于陶瓷覆盖层20远离多孔陶瓷基材10的表面，第二覆盖膜34层叠设置于第一覆盖膜32远离陶瓷覆盖层20的表面。
其中，第一覆盖膜32可以为金属或者合金。为了提高第一覆盖膜32与多孔陶瓷基材10之间的结合力，第一覆盖膜32的材质可选择与多孔陶瓷基材10之间的结合较稳定的材质。例如，第一覆盖膜32可以为钛、锆、钛铝合金、钛锆合金、钛钼合金、钛铌合金、铁铝合金或钽铝合金等。
利用钛锆合金制成的钛锆合金膜本身为局部致密膜，但是由于多孔陶瓷基材10本身为多孔结构，导致形成在多孔陶瓷基材10表面的钛锆合金膜也变为多孔连续结构，且钛锆合金膜的孔径分布比多孔陶瓷基材10表面微孔孔径稍小。
进一步地，由于钛锆合金膜中的钛锆高温时在空气中的稳定性较差，锆易吸收氢、氮、氧气，而锆钛合金化后吸气性更加，在后续制备电极时，因为钛锆合金的吸气性，在高温烧结时(300℃以上)就会发生剧烈氧化反应造成第一覆盖膜32的电阻突变。为避免第一覆盖膜32和空气的接触，需要在第一覆盖膜32表面做一层保护层。第二覆盖膜 34则可作为保护层。
其中，第二覆盖膜34也可以为金属或者合金。为了防止第一覆盖膜32与空气接触而发生氧化反应造成电阻突变，第二覆盖膜34应该选用抗氧化性能较强的材料制成。例如，第二覆盖膜34可以为铂、钯、钯铜合金、金银铂合金、金银合金、钯银合金、金铂合金等。
由于银、铂形成的保护层比较疏松，致密性不好，难以完全隔绝空气。金虽然能很好的保护钛锆合金膜，但是，一方面由于形成致密的保护层需要100nm左右或更大的厚度，会很大程度降低整个发热元件的电阻，另外成本很高。因此，本实施例通过采用金银合金，既保留金保护层的致密性，又降低了的成本，而且当按照一定比例合金化后，金银合金电阻率提高十倍，更加利于控制整个发热元件的阻值。
进一步地，本实用新型还提供一种电子雾化装置的雾化芯的制备方法，利用该制备方法可以用于制备形成上述实施例中的雾化芯100。其中，如图4和图5所示，图4是本实用新型一实施例中的雾化芯的制备方法的流程示意图，图5是与图4中的制作流程对应的加工工艺流程示意图。雾化芯100的制备方法包括以下步骤：
步骤S101：制备多孔陶瓷基材10。
首先，将用于形成多孔陶瓷基材10的原材料制成第一流延浆料，其中，用于形成多孔陶瓷基材10的原材料可以为氧化锆、氧化硅、氧化铝或莫来石等，将以上原材料中的至少一种进行混合，以形成第一流延浆料。
然后，通过流延工艺将第一流延浆料流延制成多孔陶瓷基材10。另外，可以通过控制流延的时间，以使得多孔陶瓷基材10的厚度为1-4mm。
步骤S102：制备陶瓷覆盖层20，并在陶瓷覆盖层20上形成多个贯穿陶瓷覆盖层20的孔洞，其中，陶瓷覆盖层20的孔隙率低于多孔陶瓷基材10的孔隙率。
首先，将用于形成陶瓷覆盖层20的原材料制成第二流延浆料。其中，用于形成陶瓷覆盖层20的材料可以为氧化锆、氧化硅、氧化铝、碳化硅或莫来石等，且用于形成陶瓷覆盖层20的材料的粉末粒度为 0.1-5μm。将以上原材料中的至少一种进行混合，以形成第二流延浆料。
然后，在一实施例中，可以通过流延工艺将第二流延浆料流延制成陶瓷覆盖层20。另外，可以通过控制流延的时间，以使得陶瓷覆盖层20的厚度为0.05-0.2mm。
或者，在另一实施例中，可以通过干压工艺将第二流延浆料压制形成陶瓷覆盖层20，本实用新型实施例不做具体限定。
在制作得到陶瓷覆盖层20以后，还需要在陶瓷覆盖层20上形成多个贯穿陶瓷覆盖层20的孔洞。其中，每一孔洞21的直径为5-50μm，且多个孔洞21的面积之和占陶瓷覆盖层20的垂直于孔洞21的延伸方向的横截面的面积的比例为5％-15％。
具体地，可以采用激光打孔、CNC(Computerized Numerical Control，计算机数字控制)精密钻孔、选择性腐蚀造孔等方式，直接在陶瓷覆盖层20上形成多个贯穿陶瓷覆盖层20的孔洞21。通过直接在陶瓷覆盖层20上形成贯穿陶瓷覆盖层20的通孔，钻孔方式简单，且成型后的雾化芯100上的孔洞21的深度一致性较高。
可选地，形成于同一陶瓷覆盖层20上的多个孔洞21的直径可以相等，也可以不等。形成在陶瓷覆盖层20上的孔洞21的形状可以为圆形、矩形、椭圆形、三角形、菱形以及规则或者不规则多边形孔等，本实用新型实施例不做具体限定。
其中，在上述实施例中，是先制备多孔陶瓷基材10，然后再制备陶瓷覆盖层20。可以理解地，在另一实施例中，还可以先制备陶瓷覆盖层20，然后再制备多孔陶瓷基材10。或者，在又一实施例中，还可以同时制备陶瓷覆盖层20和多孔陶瓷基材10，本实用新型实施例不做具体限定。
执行完步骤S101和步骤S102以获得多孔陶瓷基材10和陶瓷覆盖层20之后，接着执行以下步骤：
步骤S103：将多孔陶瓷基材10和陶瓷覆盖层20层叠设置并结合成一体结构。
具体地，在一实施例中，可以将陶瓷覆盖层20层叠设置在多孔陶 瓷基材10的其中一侧，并采用粘接的方式将陶瓷覆盖层20与多孔陶瓷基材10连接固定。
在本实施例中，还可以将陶瓷覆盖层20层叠设置在多孔陶瓷基材10的其中一侧，并采用烧结的方式将多孔陶瓷基材10和陶瓷覆盖层20进行连接。
其中，烧结是指在高温下(不高于熔点)，陶瓷生坯固体颗粒的相互键联，晶粒长大，空隙(气孔)和晶界渐趋减少，通过物质的传递，其总体积收缩，密度增加，最后成为具有某种显微结构的致密多晶烧结体。本实施例采用烧结的方式将陶瓷覆盖层20和多孔陶瓷基材10进行连接，由于没有有害物质产生，故而，可以提升雾化芯100的安全性能。
请继续参阅图4和图5，在本实施例中，在执行完步骤S103以获得一体结构的多孔陶瓷基材10和陶瓷覆盖层20以后，还包括：
步骤S104：在陶瓷覆盖层20远离多孔陶瓷基材10的表面形成发热膜30。
其中，发热膜的厚度为2-10μm。可选地，发热膜30可以通过物理气相沉积、电镀、电沉积、离子镀、喷涂、化学气相沉积等方式形成于陶瓷覆盖层20上。通过以上方式均可以形成厚度较薄、面积较大且分布均匀的发热膜30，故而，在将发热膜30与电极电连接时，不仅可以使得发热膜30产热均匀，而且发热面积大，热量利用率高；而且也可以大幅度降低雾化芯100内部重金属的吸出，进而提升安全性能。
可选地，在一实施例中，结合图3和图6所示，图6是图4中的步骤S105的流程示意图。在陶瓷覆盖层20远离多孔陶瓷基材10的表面形成发热膜30的步骤包括：
步骤S201：在陶瓷覆盖层20远离多孔陶瓷基材10的表面形成第一覆盖膜32。
其中，第一覆盖膜32可以为金属或者合金。第一覆盖膜32可以选用与多孔陶瓷基材10结合力较强的材料制成。例如，第一覆盖膜32可以为钛、锆、钛铝合金、钛锆合金、钛钼合金、钛铌合金、铁铝合金或钽铝合金等。
步骤S202：在第一覆盖膜32的远离陶瓷覆盖层20的表面形成第二覆盖膜34。
其中，第二覆盖膜34也可以为金属或者合金。第二覆盖膜34可以选用抗氧化性能较强的材料制成。例如，第二覆盖膜34可以为铂、钯、钯铜合金、金银铂合金、金银合金、钯银合金、金铂合金等。
可选地，第一覆盖膜32和第二覆盖膜34可以采用PVD(Physical Vapor Deposition，物理气相沉积)、CVD(Chemical Vapor Deposition，气相反应)、电镀、电沉积、离子镀或者喷涂等方式依次形成于陶瓷覆盖层20远离多孔陶瓷基材10的表面。通过采用上述方式形成的第一覆盖膜32和第二覆盖膜34的厚度较薄、面积较大且分布均匀，故而，在将发热膜30与电极电连接时，不仅可以使得发热膜30产热均匀，而且发热面积大，热量利用率高；而且也可以大幅度降低雾化芯100内部重金属的吸出，进而提升安全性能。
在另一实施例中，请参阅图7和图8，图7是本实用新型另一实施例中的雾化芯的制备方法的流程示意图，图8是与图7中的制作流程对应的加工工艺流程示意图。在本实施例中的雾化芯100的制备方法包括：
步骤S301：制备多孔陶瓷基材10。
步骤S302：制备陶瓷覆盖层20，其中，陶瓷覆盖层20的孔隙率低于多孔陶瓷基材10的孔隙率。
步骤S303：将多孔陶瓷基材10和陶瓷覆盖层20层叠设置并结合成一体结构。
步骤S304：在陶瓷覆盖层20上形成多个孔洞21。
步骤S305：在陶瓷覆盖层20远离多孔陶瓷基材10的表面形成发热膜30。
其中，步骤S301与上述实施例中的步骤S101大致相同，步骤S303与上述实施例中的步骤S103大致相同，步骤S305与上述实施例中的步骤S104大致相同，请参照上述实施例中的描述，此处不再赘述。本实施例与上述实施例的区别在于：在本实施例中，位于陶瓷覆盖层20上的多个孔洞21不是在制备陶瓷覆盖层20的时候形成的，而是在将多孔 陶瓷基材10和陶瓷覆盖层20结合形成一体结构之后，在陶瓷覆盖层20所在一侧进行打孔形成的。
在本实施例中，在进行打孔时，需要首先设定打孔的深度等于陶瓷覆盖层20的厚度，然后自陶瓷覆盖层20所在一侧开始钻孔，以在一体结构的多孔陶瓷基材10和陶瓷覆盖层20上形成多个盲孔。其中，打孔的方式以及孔的大小与上述实施例中的相同，请参照上述实施例中的描述。
本实用新型还提供一种电子雾化装置，电子雾化装置包括用于存储烟液的储液腔和雾化芯，储液腔中的烟液能够经多孔陶瓷基材传递至陶瓷覆盖层。
其中，本实施例中的雾化芯的结构与上述实施例中的雾化芯的结构相同，请参照上述实施例中的描述，此处不再赘述。
综上所述，本领域技术人员容易理解，通过在多孔陶瓷基材10的靠近发热元件的表面上结合一孔隙率低于多孔陶瓷基材10的陶瓷覆盖层20，由于孔隙率较低的陶瓷覆盖层20致密度更高不存在掉粉现象，故而可以防止雾化芯100发生掉粉的现象；而且，由于孔隙率较低的陶瓷覆盖层20可以隔绝多孔陶瓷基材10内部重金属的析出，故而可以防止重金属在抽吸时被带入气流，从而提升电子雾化装置的安全性能。
以上所述仅为本实用新型的实施例，并非因此限制本实用新型的专利范围，凡是利用本实用新型说明书及附图内容所作的等效结构或等效流程变换，或直接或间接运用在其它相关的技术领域，均同理包括在本实用新型的专利保护范围内。

Claims (17)

  1. 一种电子雾化装置的雾化芯，其中，包括：多孔陶瓷基材、陶瓷覆盖层及发热膜，所述陶瓷覆盖层结合于所述多孔陶瓷基材的表面，所述发热膜结合于所述陶瓷覆盖层远离所述多孔陶瓷基材的表面，所述陶瓷覆盖层的孔隙率低于所述多孔陶瓷基材的孔隙率，所述陶瓷覆盖层上形成有多个贯穿的孔洞。
  2. 根据权利要求1所述的雾化芯，其中，所述多孔陶瓷基材的孔隙率为40％-80％；和/或
    所述多孔陶瓷基材上的微孔的平均孔径为10μm-40μm；和/或
    用于形成所述多孔陶瓷基材的材料为氧化锆、氧化硅、氧化铝或莫来石；和/或
    所述多孔陶瓷基材的厚度为1-4mm。
  3. 根据权利要求1所述的雾化芯，其中，所述陶瓷覆盖层的孔隙率为10％-20％；和/或
    用于形成所述陶瓷覆盖层的材料为氧化锆、氧化硅、氧化铝、碳化硅或莫来石；和/或
    所述陶瓷覆盖层的厚度为0.05-0.2mm；和/或
    用于形成所述陶瓷覆盖层的材料的粉末粒度为0.1-5μm。
  4. 根据权利要求1所述的雾化芯，其中，每一所述孔洞的直径为5-50μm。
  5. 根据权利要求4所述的雾化芯，其中，多个所述孔洞的开口的面积之和占所述陶瓷覆盖层垂直于所述孔洞的延伸方向的横截面的面积的比例为5％-15％。
  6. 根据权利要求1所述的雾化芯，其中，用于形成所述陶瓷覆盖层的材料的粉末粒度为0.1-5μm。
  7. 根据权利要求1所述的雾化芯，其中，所述发热膜由金属或者合金制成；和/或
    所述发热膜的厚度为2-10μm。
  8. 根据权利要求1所述的雾化芯，其中，所述发热膜包括第一覆盖膜和第二覆盖膜；其中，所述第一覆盖膜层叠设置于所述陶瓷覆盖层远离所述多孔陶瓷基材的表面，所述第二覆盖膜层叠设置于所述第一覆盖膜远离所述陶瓷覆盖层的表面。
  9. 根据权利要求8所述的雾化芯，其中，所述第一覆盖膜和所述第二覆盖膜为金属或合金。
  10. 一种电子雾化装置的雾化芯的制备方法，其中，所述制备方法包括：
    制备多孔陶瓷基材；
    制备陶瓷覆盖层，并在所述陶瓷覆盖层上形成多个贯穿所述陶瓷覆盖层的孔洞，其中，所述陶瓷覆盖层的孔隙率低于所述多孔陶瓷基材的孔隙率；
    将所述多孔陶瓷基材和所述陶瓷覆盖层层叠设置并结合成一体结构；和
    在所述陶瓷覆盖层远离所述多孔陶瓷基材的表面形成发热膜。
  11. 根据权利要求10所述的制备方法，其中，所述制备多孔陶瓷基材的步骤包括：
    将用于形成多孔陶瓷基材的原材料制成第一流延浆料；
    通过流延工艺制成所述多孔陶瓷基材，所述多孔陶瓷基材的厚度为1-4mm。
  12. 根据权利要求10所述的制备方法，其中，所述制备陶瓷覆盖层的步骤包括：
    将用于形成陶瓷覆盖层的原材料制成第二流延浆料，用于形成所述陶瓷覆盖层的材料的粉末粒度为0.1-5μm；
    通过流延工艺或者干压工艺制成所述陶瓷覆盖层，所述陶瓷覆盖层的厚度为0.05-0.2mm。
  13. 根据权利要求10所述的制备方法，其中，所述将所述多孔陶瓷基材和所述陶瓷覆盖层层叠设置并结合成一体结构的步骤包括：
    通过粘接或烧结的方式将所述多孔陶瓷基材和所述陶瓷覆盖层进 行连接。
  14. 根据权利要求10所述的制备方法，其中，所述在所述陶瓷覆盖层远离所述多孔陶瓷基材的表面形成发热膜的步骤包括：
    采用PVD、CVD、电镀、电沉积、离子镀或者喷涂的方式在所述陶瓷覆盖层远离所述多孔陶瓷基材的表面形成所述发热膜，所述发热膜的厚度为2-10μm。
  15. 根据权利要求10所述的制备方法，其中，所述在所述陶瓷覆盖层远离所述多孔陶瓷基材的表面形成发热膜的步骤包括：
    采用PVD、CVD、电镀、电沉积、离子镀或者喷涂的方式在所述陶瓷覆盖层远离所述多孔陶瓷基材的表面形成第一覆盖膜；
    采用PVD、CVD、电镀、电沉积、离子镀或者喷涂的方式在所述第一覆盖膜远离所述陶瓷覆盖层的表面形成第二覆盖膜；所述第一覆盖膜和所述第二覆盖膜形成发热膜。
  16. 根据权利要求15所述的制备方法，其中，所述第一覆盖膜和所述第二覆盖膜为金属或合金。
  17. 一种电子雾化装置，其中，所述电子雾化装置包括用于存储烟液的储液腔和根据权利要求1所述的雾化芯，所述储液腔中的烟液能够经所述多孔陶瓷基材传递至所述陶瓷覆盖层。
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