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WO2020134177A1 - 一种具有反向通流功能的器件 - Google Patents

一种具有反向通流功能的器件 Download PDF

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WO2020134177A1
WO2020134177A1 PCT/CN2019/104539 CN2019104539W WO2020134177A1 WO 2020134177 A1 WO2020134177 A1 WO 2020134177A1 CN 2019104539 W CN2019104539 W CN 2019104539W WO 2020134177 A1 WO2020134177 A1 WO 2020134177A1
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cathode
low
gate
eto
igct
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French (fr)
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曾嵘
刘佳鹏
周文鹏
赵彪
余占清
陈政宇
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Tsinghua University
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Tsinghua University
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D18/00—Thyristors
    • H10D18/80—Bidirectional devices, e.g. triacs 
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D18/00—Thyristors
    • H10D18/60—Gate-turn-off devices 
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/124—Shapes, relative sizes or dispositions of the regions of semiconductor bodies or of junctions between the regions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/13—Semiconductor regions connected to electrodes carrying current to be rectified, amplified or switched, e.g. source or drain regions
    • H10D62/141—Anode or cathode regions of thyristors; Collector or emitter regions of gated bipolar-mode devices, e.g. of IGBTs
    • H10D62/142—Anode regions of thyristors or collector regions of gated bipolar-mode devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/17—Semiconductor regions connected to electrodes not carrying current to be rectified, amplified or switched, e.g. channel regions
    • H10D62/192—Base regions of thyristors
    • H10D62/199—Anode base regions of thyristors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/17—Semiconductor regions connected to electrodes not carrying current to be rectified, amplified or switched, e.g. channel regions
    • H10D62/192—Base regions of thyristors
    • H10D62/206—Cathode base regions of thyristors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/20—Electrodes characterised by their shapes, relative sizes or dispositions 
    • H10D64/27—Electrodes not carrying the current to be rectified, amplified, oscillated or switched, e.g. gates
    • H10D64/291—Gate electrodes for thyristors

Definitions

  • the invention relates to the technical field of power electronics, in particular to a device with a reverse flow function.
  • FIG. 1 shows a schematic diagram of the structure of a conventional GCT unit.
  • the existing conventional GCT unit mainly includes a GCT chip and a corresponding compact gate drive.
  • the GCT chip has a typical asymmetric structure, and the GCT chip has a typical asymmetric structure.
  • a PN junction is provided.
  • the PN junction adopts different doping processes to form a P-type semiconductor and an N-type semiconductor on the same semiconductor substrate through diffusion.
  • the semiconductor substrate is usually silicon or germanium.
  • the interface between the P-type semiconductor and the N-type semiconductor forms a space charge region called a PN junction.
  • FIG. 2 shows a schematic diagram of the structure of the PN junction according to the prior art.
  • the PN junction has unidirectional conductivity, which is a characteristic used by many devices in electronic technology.
  • the PN structure forms the material basis of semiconductor diodes and bipolar transistors. When a forward voltage is applied to the structure, the first PN junction J1 and the third PN junction J3 shown in FIG. 1 are forward-biased, and the second PN junction J2 is reverse-biased.
  • the structure can withstand voltages of several kV; however, when a reverse voltage is applied to this structure, the first PN junction J1 and the third PN junction J3 shown in FIG.
  • the second PN junction J2 is forward-biased, because the first PN junction
  • the doping concentration of J1 and the second PN junction J3 is high, and the blocking ability is only about 20V.
  • its first PN junction J1 will have Zener breakdown or punch-through breakdown under extremely low reverse voltage. Therefore, when the reverse voltage is applied, the voltage mainly falls at the third PN junction J3; however, in practical applications, the GCT chip is used together with the gate drive, and the voltage distribution in the internal p or n base region will be driven Circuit impact.
  • the control logic of the traditional gate drive is: in the blocking state, an electrical signal 20V higher than the gate potential is applied to the cathode to ensure that the device is in a stable blocking state; in the open state, by The gate electrode injects drive current into the cathode to trigger the device to conduct. At this time, the reverse voltage is applied to the entire IGCT/ETO device under the turn-on condition or the blocking condition, which may cause damage to the driving circuit.
  • power electronic devices In applications such as converters, power electronic devices usually need to have the ability to reverse current flow, which is usually achieved by anti-parallel diodes outside the device or manufacturing diodes in the non-GCT area of the chip.
  • anti-parallel diodes will introduce stray parameters into the loop, causing peak overvoltages, and will increase the design difficulty of the press-fit structure.
  • Manufacturing diodes in non-GCT areas will reduce the flow capacity of the entire GCT chip, and will also Increasing the difficulty of the process of process realization has a greater impact on the yield.
  • the present invention provides a device with a reverse flow function.
  • a device with reverse flow function includes: a GCT chip module and a drive circuit module, wherein the GCT chip module includes: p + emitter, n + buffer layer, n base region, p base region 5.
  • the GCT chip module includes: p + emitter, n + buffer layer, n base region, p base region 5.
  • a five-layer thyristor structure composed of an n + emitter, an anode connected to the p + emitter, a gate connected to the p base, and a cathode connected to the n + emitter;
  • the p + emitter and the n + buffer layer are doped
  • the driving circuit module is connected to the cathode and the gate electrode in the GCT chip module through a cable.
  • the driving circuit module includes at least one of an IGCT driving circuit or an ETO driving circuit.
  • the IGCT drive circuit includes: a switch, a DC power supply, and a trigger current source.
  • the IGCT drive circuit passes the switch, the DC power supply, and the trigger current source at the cathode of the GCT chip module and Four circuits are formed between the gates, and the four circuits include:
  • the cathode is directly connected to the gate electrode through the switch;
  • the cathode is connected to the positive electrode of the DC power supply through the switch, and the negative electrode of the DC power supply is connected to the gate electrode;
  • the cathode is connected to the negative electrode of the trigger current source through the switch, and the positive electrode of the trigger current source is connected to the gate electrode;
  • An open circuit is formed by the changeover switch, and the cathode and the gate electrode cannot communicate.
  • the ETO drive circuit includes: a first low-voltage MOSFET, a second low-voltage MOSFET, and a trigger current source, and the ETO drive circuit passes through the first low-voltage MOSFET, the second low-voltage MOSFET, and the trigger current source
  • Two circuits are formed between the cathode and the gate of the chip module, and the two circuits include:
  • the cathode is connected to the emitter of the first low-voltage MOSFET, the collector of the first low-voltage MOSFET is connected to the negative electrode of the trigger current source, and the positive electrode of the trigger current source is connected to the gate electrode;
  • the cathode is connected to the emitter of the first low-voltage MOSFET, the collector of the first low-voltage MOSFET is connected to the collector of the second low-voltage MOSFET, and the emitter of the second low-voltage MOSFET is connected to the gate.
  • the GCT chip module needs to perform local life control processing.
  • anode, cathode and gate of the GCT chip module are all metal electrodes.
  • the metal electrode has a thickness of 5um to 30um.
  • the device of the present invention + buffer layer and the p + doped emitter by n GCT chip module and the production of a high concentration in the gate below the p + doped to improve the characteristics of the chip GCT; provided by GCT connected to the chip module IGCT
  • the driving circuit or the ETO driving circuit forms a reverse flow between the cathode and the gate of the GCT chip, realizes the reverse flow function of the IGCT or ETO device, and ensures that the device still has a forward conduction The performance of traditional IGCT or ETO devices.
  • the device of the present invention realizes the reverse flow of the IGCT or ETO device without changing the original GCT structure and does not affect the normal function of the IGCT or ETO device, the process steps are simple, and the yield of industrial production is improved; For applications such as converters, it can significantly reduce the complexity of system design, use a single power electronic device to achieve higher efficiency, and improve the overall reliability of the equipment.
  • Other features and advantages of the present invention will be explained in the subsequent description, and partly become obvious from the description, or be understood by implementing the present invention. The objects and other advantages of the present invention can be realized and obtained by the structures indicated in the description, claims, and drawings.
  • FIG. 1 shows a schematic structural diagram of a conventional GCT unit according to the prior art
  • FIG. 3 shows a schematic diagram of p + doping under the gate region of the GCT chip module according to an embodiment of the present invention
  • FIG. 4 shows a schematic structural diagram of an IGCT device with a reverse flow function according to an embodiment of the present invention
  • FIG. 5 shows a schematic structural diagram of an ETO device with a reverse flow function according to an embodiment of the present invention.
  • An embodiment of the present invention provides a device with reverse flow capability, the device including a GCT chip module and a drive circuit module.
  • the GCT chip module has a five-layer thyristor structure composed of p + emitter, n + buffer layer, n base region, p base region, n + emitter, an anode connected to the p + emitter, and the p
  • the gate electrode connected to the base region and the cathode connected to the n + emitter, the GCT chip module has the same structure as the conventional GCT unit shown in FIG.
  • a first PN junction J1 is provided in the doped region formed by the electrode and the n + buffer layer, a second PN junction J2 is provided in the n base region configuration, and a third PN junction J3 is provided in the p base region.
  • the n + buffer layer and the p + emitter of the GCT chip module are doped so that the first PN junction J1 can undergo a reversible and uniform avalanche breakdown under the condition of a reverse small voltage Or punch-through breakdown; and the GCT chip module is made with a high concentration p + doped region below the gate of the p base region, the high concentration p + doped region specifically refers to a concentration range of 10 17 /cm 3 to 10 21 /
  • the p + doped region of cm 3 not only guarantees the low resistance characteristic during reverse flow, but also does not affect the breakdown characteristic of the third PN junction J3, as shown in FIG.
  • FIG. 3 A schematic diagram of p + doping below the gate region of the GCT chip module.
  • the GCT chip module according to the embodiment of the present invention also needs to perform local life control processing, thereby improving the dynamic characteristics of the GCT chip module. For example: using 1-12MeV electron irradiation or proton irradiation to a part of the structure inside the GCT chip, by introducing an appropriate recombination center inside the GCT chip, in order to reduce the minority carrier lifetime in the GCT chip.
  • the anode, cathode and gate of the GCT chip module are metal electrodes.
  • the metal electrode is made of metal, and the metal electrode has a thickness of 5um to 30um.
  • the metal electrode structure can ensure the GCT
  • the chip module has strong lateral flow capacity under high current conditions.
  • the driving circuit module is connected to the cathode and the gate electrode of the GCT chip module through a cable.
  • the device can form different lines through the driving circuit module, which not only can ensure that the device has a forward flow Function, and when the direction of the current is reversed, the reverse flow function of the device can be realized.
  • the drive circuit module includes an IGCT drive circuit or an ETO drive circuit.
  • the IGCT drive circuit is connected to the GCT chip module to form an IGCT device with a reverse current flow function
  • the ETO drive circuit is connected to the GCT chip module to form ETO device with reverse flow function.
  • FIG. 4 shows a schematic structural diagram of an IGCT device with a reverse flow function according to an embodiment of the present invention.
  • an IGCT drive circuit is connected to the GCT chip module of the IGCT device.
  • the IGCT drive circuit includes a switch, a DC power supply, and a trigger current source.
  • the IGCT drive circuit passes the switch, the DC
  • the power supply and the trigger current source form four circuits between the cathode and the gate of the GCT chip module.
  • the circuit that the IGCT driving circuit can form includes: 1. a direct connection between the cathode and the gate electrode to form a short circuit; 2. the cathode and the DC power supply Positive electrode connection, the negative electrode of the DC power supply is connected to the gate electrode, forming a positive channel for the gate electrode to inject drive current into the cathode; 3.
  • FIG. 5 shows the reverse current flow function according to an embodiment of the present invention.
  • Schematic diagram of the structure of the ETO device As shown in the figure, an ETO drive circuit is connected to the GCT chip module of the ETO device, and the ETO drive circuit includes a first low-voltage MOSFET, a second low-voltage MOSFET, and a trigger current source.
  • the ETO drive circuit forms two circuits between the cathode and gate of the GCT chip module through the first low-voltage MOSFET, the second low-voltage MOSFET, and the trigger current source. Further, the circuit that the ETO drive circuit can form includes: 1. The emitter of the first low-voltage MOSFET is connected to the cathode, and the collector of the first low-voltage MOSFET is connected to the negative electrode of the trigger current source, The anode of the trigger current source is connected to the gate to form a path; 2.
  • the emitter of the first low-voltage MOSFET is connected to the cathode, and the collector of the first low-voltage MOSFET is connected to the second low-voltage MOSFET The collector is connected, and the emitter of the second low-voltage MOSFET is connected to the gate to form a path for the gate electrode to inject a driving current into the cathode, or a short-circuit short-circuit between the gate and the cathode.
  • the IGCT device forms the cathode of the GCT chip module through the IGCT drive circuit and connects the negative electrode of the trigger current source and the trigger current source
  • the positive electrode is connected to the gate electrode to form a reverse flow path injecting a driving current from the cathode to the gate electrode
  • the ETO device forms the cathode connection of the GCT chip module through the ETO driving circuit
  • the emitter of the first low-voltage MOSFET, the collector of the first low-voltage MOSFET are connected to the negative electrode of the trigger current source, and the positive electrode of the trigger current source is connected to the gate electrode,
  • the gate injects a path for reverse flow of driving current.
  • the IGCT device or the ETO device is provided with a reverse flow function.
  • the IGCT drive circuit or the ETO drive circuit can identify the anode current direction.
  • the IGCT drive circuit or the ETO drive circuit can also short-circuit the gate and the cathode of the GCT chip in a short time under abnormal conditions of reverse flow, to ensure that the device is not damaged by abnormal flow.
  • the IGCT driving circuit may form a short circuit between the cathode and the gate of the GCT chip through a switch; or the ETO driving circuit may use a second low-voltage MOSFET between the cathode and the gate of the GCT chip There is a short circuit between them.
  • a low-resistance channel is formed between the gate cathode of the GCT chip by forming a short circuit, and when the transition from the forward flow state to the reverse flow state is performed, the plasma in the GCT chip of the device is used to participate in the conduction to ensure the device normal work.
  • the gate and the cathode should maintain a short-circuit state.
  • the ETO driving circuit can be connected in parallel through the second low-voltage MOSFET.
  • Electronic devices, relays, etc. form a short circuit between the cathode and the gate of the chip, thereby coping with possible abnormal reverse flow conditions and prolonging the working life of the device.
  • Example embodiments of the present invention by a device of the chip module GCT + buffer layer and the p + doped emitter and a gate fabricated characteristics under the high-concentration p + doped, n-improving GCT chip; and by providing the chip module is connected to the GCT
  • the IGCT drive circuit or ETO drive circuit of the GCT chip forms a reverse flow between the cathode and the gate of the GCT chip, realizes the reverse flow function of the IGCT or ETO device, and ensures that the device is in forward conduction It still has the performance of traditional IGCT or ETO devices.
  • the device described in the embodiment of the present invention realizes the reverse flow of the IGCT or ETO device without changing the original GCT structure and does not affect the normal function of the IGCT or ETO device, the process steps are simple, and the industrially produced finished products are improved For applications such as converters, it can significantly reduce the complexity of system design, use a single power electronic device to achieve higher efficiency, and improve the overall reliability of the equipment.
  • those skilled in the art can make various modifications and variations to the present invention without departing from the spirit and scope of the present invention. In this way, if these modifications and variations of the present invention fall within the scope of the claims of the present invention and their equivalent technologies, the present invention is also intended to include these modifications and variations.

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Abstract

本发明提出了一种具备反向通流功能的器件，所述器件通过GCT芯片模块n+缓冲层与p+发射极掺杂以及在门极下方制作高浓度p+掺杂，改善GCT芯片的特性；并通过设置连接在GCT芯片模块上的IGCT驱动电路或ETO驱动电路，使所述GCT芯片的阴极和门极之间形成反向通流，实现IGCT或ETO器件的反向通流功能，并且保证了所述器件在正向导通时仍具有传统IGCT或ETO器件的性能；同时，所述器件在不改变原有GCT结构以及不影响IGCT或ETO器件正常功能的情况下，实现IGCT或ETO器件的反向通流，工艺步骤简单，提高了工业生产的成品率。

Description

一种具有反向通流功能的器件
本申请要求于2018年12月27日在中国专利局递交的、申请号为“201811613543.5”、发明名称为“一种具有反向通流功能的器件”的优先权，其全部内容通过引用结合在本申请中。
技术领域
本发明涉及电力电子技术领域，尤其涉及一种具有反向通流功能的器件。
背景技术
图1示出了传统GCT单元的结构示意图，如图所示，现有传统GCT单元主要包括GCT芯片和对应的紧密型门极驱动两部分，GCT芯片内部为典型的非对称结构，GCT芯片内部设置PN结，所述PN结是采用不同的掺杂工艺，通过扩散作用，将P型半导体与N型半导体制作在同一块半导体基片上，所述半导体基片通常是硅或锗，在所述P型半导体与N型半导体的交界面就形成空间电荷区称为PN结，如图2示出了根据现有技术的所述PN结的结构示意图。PN结具有单向导电性，是电子技术中许多器件所利用的特性，PN结构成半导体二极管、双极性晶体管的物质基础。所述结构在施加正向电压时，如图1中所示的第一PN结J1与第三PN结J3正偏，第二PN结J2反偏，由于n基区电阻率水平较低，该结构能够承受数kV电压；然而该结构在施加反向电压时，图1中所示的第一PN结J1与第三PN结J3反偏，第二PN结J2正偏，由于第一PN结J1与第二PN结J3掺杂浓度较高，该阻断能力仅为20V左右。对于传统结构的GCT芯片而言，由于透明阳极与缓冲层结构的存在，其第一PN结J1在极低的反向电压下即会出现齐纳击穿或穿通击穿。故在施加反向电压时，电压主要降落在第三PN结J3处；然而在实际应用情形中，GCT芯片配合门极驱动共同使用，其内部p基区或n基区的电压分布会受到驱动电路影响。在正常工况下，传统门极驱动的控制逻辑为：在阻断状态下，在阴极上施加比门极电位高20V的电信号，以确保器件处于稳定阻断状态；在开 通状态下，由门极向阴极注入驱动电流，触发器件导通。此时在开通状况或是阻断状况下，对IGCT/ETO器件整体施加反向电压易造成驱动电路的损坏。
在变换器等应用中，电力电子器件通常需要具备反向通流的能力，这通常通过在器件外部反并联二极管或在芯片非GCT区域制造二极管这两种方式来实现的。然而，反并联二极管会在回路中引入杂散参数，造成尖峰过电压，并会加大压装结构的设计难度，在非GCT区域制造二极管则会降低整个GCT芯片的通流能力，同时也会提升工艺实现过程的难度，对成品率有较大影响。
发明内容
针对现有技术反向通流易损坏器件、器件实现反向通流的成品率低等技术问题，本发明提出了一种具备反向通流功能的器件。
一种具备反向通流功能的器件，所述器件包括：GCT芯片模块和驱动电路模块，其中，所述GCT芯片模块包括：p +发射极、n +缓冲层、n基区、p基区、n +发射极构成的五层晶闸管结构，与所述p +发射极连接的阳极，与所述p基区连接的门极以及与所述n +发射极连接的阴极；
所述p +发射极和所述n +缓冲层掺杂；
所述p基区的门极下方掺杂高浓度p +；
所述驱动电路模块通过电缆与所述GCT芯片模块中的阴极和门极相连。
进一步地，所述驱动电路模块包括IGCT驱动电路或ETO驱动电路中至少一种。
进一步地，所述IGCT驱动电路包括：切换开关、直流电源和触发电流源，所述IGCT驱动电路通过所述切换开关、所述直流电源和所述触发电流源在所述GCT芯片模块的阴极和门极之间形成四条电路，所述四条电路包括：
所述阴极通过所述切换开关与所述门极直接连接；
所述阴极通过所述切换开关连接所述直流电源的正极，所述直流电源的负极连接所述门极；
所述阴极通过所述切换开关连接所述触发电流源的负极，所述触发电流源的正极连接所述门极；
通过所述切换开关形成断路，所述阴极与所述门极无法连通。
进一步地，所述ETO驱动电路包括：第一低压MOSFET、第二低压MOSFET和触发电流源，所述ETO驱动电路通过所述第一低压MOSFET、所述第二低压MOSFET和所述触发电流源在所述芯片模块的阴极和门极之间形成两条电路，所述两条电路包括：
所述阴极连接所述第一低压MOSFET的射极，所述第一低压MOSFET的集电极连接所述触发电流源的负极，所述触发电流源的正极连接所述门极；
所述阴极连接所述第一低压MOSFET的射极，所述第一低压MOSFET的集电极连接所述第二低压MOSFET的集电极，所述第二低压MOSFET的射极连接所述门极。
进一步地，所述GCT芯片模块需进行局部寿命控制处理。
进一步地，所述GCT芯片模块的阳极、阴极和门极均为金属电极。
进一步地，所述金属电极具有5um至30um的厚度。
本发明所述器件通过GCT芯片模块n +缓冲层与p +发射极掺杂以及在门极下方制作高浓度p +掺杂，改善GCT芯片的特性；并通过设置连接在GCT芯片模块上的IGCT驱动电路或ETO驱动电路，使所述GCT芯片的阴极和门极之间形成反向通流，实现IGCT或ETO器件的反向通流功能，并且保证了所述器件在正向导通时仍具有传统IGCT或ETO器件的性能。同时，本发明所述器件在不改变原有GCT结构以及不影响IGCT或ETO器件正常功能的情况下，实现IGCT或ETO器件的反向通流，工艺步骤简单，提高了工业生产的成品率；对于诸如变换器等应用场合，能够显著降低系统设计的复杂度，利用单个电力电子器件实现更高的效率，提升设备整体可靠性。本发明的其它特征和优点将 在随后的说明书中阐述，并且，部分地从说明书中变得显而易见，或者通过实施本发明而了解。本发明的目的和其他优点可通过在说明书、权利要求书以及附图中所指出的结构来实现和获得。
附图说明
为了更清楚地说明本发明实施例或现有技术中的技术方案，下面将对实施例或现有技术描述中所需要使用的附图作一简单地介绍，显而易见地，下面描述中的附图是本发明的一些实施例，对于本领域普通技术人员来讲，在不付出创造性劳动的前提下，还可以根据这些附图获得其他的附图。
图1示出了根据现有技术的传统GCT单元的结构示意图；
图2示出了根据现有技术的所述PN结的结构示意图；
图3示出了根据本发明实施例的所述GCT芯片模块的门极区域下方p +掺杂的示意图；
图4示出了根据本发明实施例的具备反向通流功能的IGCT器件的结构示意图；
图5示出了根据本发明实施例的具备反向通流功能的ETO器件的结构示意图。
具体实施方式
为使本发明实施例的目的、技术方案和优点更加清楚，下面将结合本发明实施例中的附图，对本发明实施例中的技术方案进行清楚、完整地说明，显然，所描述的实施例是本发明一部分实施例，而不是全部的实施例。基于本发明中的实施例，本领域普通技术人员在没有做出创造性劳动前提下所获得的所有其他实施例，都属于本发明保护的范围。
本发明实施例提供了一种具备反向通流能力的器件，所述器件包括GCT芯片模块和驱动电路模块。所述GCT芯片模块具有p +发射极、n +缓冲层、n基区、p基区、n +发射极构成的五层晶闸管结构，与所述p +发射极连接的阳极，与所述p基区连接的门极以及与所述n +发射极 连接的阴极，所述GCT芯片模块与图1示出的传统GCT单元的结构相同；并且在所述GCT芯片模块中，所述p +发射极和所述n +缓冲层构成掺杂区中设置有第一PN结J1，所述n基区构成中设置有第二PN结J2，所述p基区中设置有第三PN结J3。本发明实施例将所述GCT芯片模块的n +缓冲层与p +发射极进行掺杂，使得所述第一PN结J1在反向小电压的状况下，能够发生可逆且均匀的雪崩击穿或穿通击穿；并且所述GCT芯片模块在p基区的门极下方制作有高浓度p +掺杂区域，高浓度p +掺杂区域具体指浓度范围为10 17/cm 3至10 21/cm 3的p +掺杂区域，不仅保证了反向通流时的低阻特性，同时也不会影响所述第三PN结J3的击穿特性，如图3示出了根据本发明实施例的所述GCT芯片模块的门极区域下方p +掺杂的示意图。本发明实施例所述GCT芯片模块还需要进行局部寿命控制处理，从而改善所述GCT芯片模块的动态特性。例如：使用1-12MeV电子辐照或质子辐照向GCT芯片内部的部分结构，通过在GCT芯片内部引入适当的复合中心，以此来降低GCT芯片中的少子寿命。同时，所述GCT芯片模块的阳极、阴极和门极均为金属电极，所述金属电极使用金属制成，且所述金属电极具有5um至30um的厚度，所述金属电极结构能保证所述GCT芯片模块在大电流状况下具有较强的横向通流能力。
所述驱动电路模块通过电缆与所述GCT芯片模块中的阴极和门极相连，本发明实施例所述器件通过所述驱动电路模块能够形成不同的线路，不仅能够保证所述器件正向通流功能，而且在电流方向逆转时，能够实现所述器件的反向通流功能。所述驱动电路模块包括IGCT驱动电路或ETO驱动电路，所述IGCT驱动电路与所述GCT芯片模块连接构成具备反向通流功能的IGCT器件，所述ETO驱动电路与所述GCT芯片模块连接构成具备反向通流功能的ETO器件。其中，图4示出了根据本发明实施例的具备反向通流功能的IGCT器件的结构示意图。如图所示，所述IGCT器件的GCT芯片模块上连接有IGCT驱动电路，所述IGCT驱动电路包括切换开关、直流电源和触发电流源，所 述IGCT驱动电路通过所述切换开关、所述直流电源和所述触发电流源在所述GCT芯片模块的阴极和门极之间形成四条电路。进一步地，通过所述切换开关的切换，所述IGCT驱动电路能够形成的电路包括：1.所述阴极与所述门极之间直接连接，形成短路；2.所述阴极与所述直流电源的正极连接，所述直流电源的负极与所述门极连接，形成门极向阴极注入驱动电流的正向通流的通路；3.所述阴极与所述触发电流源的负极连接，所述触发电流源的正极与所述门极连接形成通路；4.所述阴极与所述门极之间无法连通，形成断路；图5则示出了根据本发明实施例的具备反向通流功能的ETO器件的结构示意图。如图所示，所述ETO器件的GCT芯片模块上连接ETO驱动电路，所述ETO驱动电路包括第一低压MOSFET、第二低压MOSFET和触发电流源。所述ETO驱动电路通过所述第一低压MOSFET、所述第二低压MOSFET和所述触发电流源在所述GCT芯片模块的阴极和门极之间形成两条电路。进一步地，所述ETO驱动电路能够形成的电路包括：1.所述第一低压MOSFET的射极与所述阴极连接，所述第一低压MOSFET的集电极与所述触发电流源的负极连接，所述触发电流源的正极与所述门极连接形成通路；2.所述第一低压MOSFET的射极与所述阴极连接，所述第一低压MOSFET的集电极与所述第二低压MOSFET的集电极连接，所述第二低压MOSFET的射极与所述门极连接，形成门极向阴极注入驱动电流的正向通流的通路或门极与阴极间短时间的短路。
在上述IGCT驱动电路或ETO驱动电路能够形成的电路中，例如：所述IGCT器件通过所述IGCT驱动电路形成所述GCT芯片模块的阴极连接所述触发电流源的负极、所述触发电流源的正极与所述门极连接，从而形成从所述阴极向所述门极注入驱动电流的反向通流的通路，或者所述ETO器件通过所述ETO驱动电路形成所述GCT芯片模块的阴极连接所述第一低压MOSFET的射极、所述第一低压MOSFET的集电极与所述触发电流源的负极连接、所述触发电流源的正极与所述门 极连接，也形成从所述阴极向所述门极注入驱动电流的反向通流的通路。在形成了具有反向通流的电路后，使得所述IGCT器件或所述ETO器件具备反向通流功能。
本发明实施例中所述IGCT驱动电路或所述ETO驱动电路能够识别阳极电流方向，识别阳极电流方向主要有三种方法，包括：1.通过在驱动板上测量门、阴极间电压，并通过该电压与驱动内部触发状态综合判断；2.在驱动板上加装阳极电流传感器直接进行测量；3.在驱动板上测量阳阴极电压，以测量得到的电压为依据进行阳极电流方向的测量和判断。所述IGCT驱动电路或所述ETO驱动电路在出现反向通流的异常状况下，还能够在短时间内将所述GCT芯片的门极与阴极短路，保证器件不被异常通流损坏。示例性地，所述IGCT驱动电路可以通过切换开关在所述GCT芯片的阴极与门极之间形成短路；或者所述ETO驱动电路可以通过第二低压MOSFET在所述GCT芯片的阴极与门极之间形成短时间的短路。通过形成短路的方式在所述GCT芯片的门阴极之间形成低阻通道，在由正向通流状态向反向通流状态转换时，利用器件GCT芯片内的等离子体参与导电，以保证器件正常工作。特别地，所述IGCT驱动电路和所述ETO驱动电路在门极驱动下电状况下，门极和阴极间应保持短路状态，例如：所述ETO驱动电路可通过在第二低压MOSFET上并联电力电子器件或继电器等在所述芯片的阴极与门极之间形成短路，从而应对可能出现的异常反向通流情况、延长器件的工作寿命。
本发明实施例所述器件通过GCT芯片模块n +缓冲层与p +发射极掺杂以及在门极下方制作高浓度p +掺杂，改善GCT芯片的特性；并通过设置连接在GCT芯片模块上的IGCT驱动电路或ETO驱动电路，使所述GCT芯片的阴极和门极之间形成反向通流，实现IGCT或ETO器件的反向通流功能，并且保证了所述器件在正向导通时仍具有传统IGCT或ETO器件的性能。同时，本发明实施例所述器件在不改变原有GCT 结构以及不影响IGCT或ETO器件正常功能的情况下，实现IGCT或ETO器件的反向通流，工艺步骤简单，提高了工业生产的成品率；对于诸如变换器等应用场合，能够显著降低系统设计的复杂度，利用单个电力电子器件实现更高的效率，提升设备整体可靠性。显然，本领域的技术人员可以对本发明进行各种改动和变型而不脱离本发明的精神和范围。这样，倘若本发明的这些修改和变型属于本发明权利要求及其等同技术的范围之内，则本发明也意图包含这些改动和变型在内。

Claims (7)

  1. 一种具备反向通流功能的器件，所述器件包括：GCT芯片模块和驱动电路模块，其中，
    所述GCT芯片模块包括：p +发射极、n +缓冲层、n基区、p基区、n +发射极构成的五层晶闸管结构，与所述p +发射极连接的阳极，与所述p基区连接的门极以及与所述n +发射极连接的阴极；
    所述p +发射极和所述n +缓冲层掺杂；
    所述p基区的门极下方掺杂高浓度p +；
    所述驱动电路模块通过电缆与所述GCT芯片模块中的阴极和门极相连。
  2. 根据权利要求1所述的器件，其特征在于，所述驱动电路模块包括IGCT驱动电路或ETO驱动电路中至少一种。
  3. 根据权利要求2所述的器件，其特征在于，所述IGCT驱动电路包括：切换开关、直流电源和触发电流源，所述IGCT驱动电路通过所述切换开关、所述直流电源和所述触发电流源在所述GCT芯片模块的阴极和门极之间形成四条电路，所述四条电路包括：
    所述阴极通过所述切换开关与所述门极直接连接；
    所述阴极通过所述切换开关连接所述直流电源的正极，所述直流电源的负极连接所述门极；
    所述阴极通过所述切换开关连接所述触发电流源的负极，所述触发电流源的正极连接所述门极；
    通过所述切换开关形成断路，所述阴极与所述门极无法连通。
  4. 根据权利要求2所述的器件，其特征在于，所述ETO驱动电路包括：第一低压MOSFET、第二低压MOSFET和触发电流源，所述ETO驱动电路通过所述第一低压MOSFET、所述第二低压MOSFET和所述触 发电流源在所述芯片模块的阴极和门极之间形成两条电路，所述两条电路包括：
    所述阴极连接所述第一低压MOSFET的射极，所述第一低压MOSFET的集电极连接所述触发电流源的负极，所述触发电流源的正极连接所述门极；
    所述阴极连接所述第一低压MOSFET的射极，所述第一低压MOSFET的集电极连接所述第二低压MOSFET的集电极，所述第二低压MOSFET的射极连接所述门极。
  5. 根据权利要求1所述的器件，其特征在于，对所述GCT芯片模块进行局部寿命控制处理。
  6. 根据权利要求1所述的器件，其特征在于，所述GCT芯片模块的阳极、阴极和门极均为金属电极。
  7. 根据权利要求6所述的器件，其特征在于，所述金属电极具有5um至30um的厚度。
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