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WO2009031206A1 - 半導体レーザ素子および半導体レーザ素子製造方法 - Google Patents

半導体レーザ素子および半導体レーザ素子製造方法 Download PDF

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Publication number
WO2009031206A1
WO2009031206A1 PCT/JP2007/067231 JP2007067231W WO2009031206A1 WO 2009031206 A1 WO2009031206 A1 WO 2009031206A1 JP 2007067231 W JP2007067231 W JP 2007067231W WO 2009031206 A1 WO2009031206 A1 WO 2009031206A1
Authority
WO
WIPO (PCT)
Prior art keywords
semiconductor laser
laser element
window region
group
vacancies
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/JP2007/067231
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English (en)
French (fr)
Inventor
Hidehiro Taniguchi
Hirotatsu Ishii
Takeshi Namegaya
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Furukawa Electric Co Ltd
Original Assignee
Furukawa Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Furukawa Electric Co Ltd filed Critical Furukawa Electric Co Ltd
Priority to JP2009531045A priority Critical patent/JP5128604B2/ja
Priority to EP07806686.7A priority patent/EP2187488B1/en
Priority to CN2007801005049A priority patent/CN101796699B/zh
Priority to PCT/JP2007/067231 priority patent/WO2009031206A1/ja
Publication of WO2009031206A1 publication Critical patent/WO2009031206A1/ja
Priority to US12/716,315 priority patent/US8842707B2/en
Anticipated expiration legal-status Critical
Priority to US14/460,090 priority patent/US9478944B2/en
Ceased legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/16—Window-type lasers, i.e. with a region of non-absorbing material between the active region and the reflecting surface
    • H01S5/164—Window-type lasers, i.e. with a region of non-absorbing material between the active region and the reflecting surface with window regions comprising semiconductor material with a wider bandgap than the active layer
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/04—Processes or apparatus for excitation, e.g. pumping, e.g. by electron beams
    • H01S5/042—Electrical excitation ; Circuits therefor
    • H01S5/0421—Electrical excitation ; Circuits therefor characterised by the semiconducting contacting layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/16—Window-type lasers, i.e. with a region of non-absorbing material between the active region and the reflecting surface
    • H01S5/162—Window-type lasers, i.e. with a region of non-absorbing material between the active region and the reflecting surface with window regions made by diffusion or disordening of the active layer
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/16—Window-type lasers, i.e. with a region of non-absorbing material between the active region and the reflecting surface
    • H01S5/168—Window-type lasers, i.e. with a region of non-absorbing material between the active region and the reflecting surface with window regions comprising current blocking layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/2054—Methods of obtaining the confinement
    • H01S5/2059—Methods of obtaining the confinement by means of particular conductivity zones, e.g. obtained by particle bombardment or diffusion
    • H01S5/2072—Methods of obtaining the confinement by means of particular conductivity zones, e.g. obtained by particle bombardment or diffusion obtained by vacancy induced diffusion
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/305—Structure or shape of the active region; Materials used for the active region characterised by the doping materials used in the laser structure
    • H01S5/3054—Structure or shape of the active region; Materials used for the active region characterised by the doping materials used in the laser structure p-doping
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/32—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures
    • H01S5/3223—IV compounds
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
    • H01S5/3427—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in IV compounds

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Semiconductor Lasers (AREA)
  • Geometry (AREA)

Abstract

　本発明にかかる半導体レーザ素子１は、III族空孔の拡散によって形成された混晶化部分を含む窓領域２３と、量子井戸構造の活性層１５を有する非窓領域２４とを備え、所定の原子を吸収しIII族空孔の拡散を促進する促進膜を窓領域２３上に設けて混晶化部分を形成する半導体レーザ素子において、活性層１５の近傍側の層にＶ族サイトを優先的に置換する不純物がドーピングされ、窓領域におけるエネルギーバンドギャップと非窓領域におけるエネルギーバンドギャップとの差が５０ｍｅＶ以上であることを特徴とする。
PCT/JP2007/067231 2007-09-04 2007-09-04 半導体レーザ素子および半導体レーザ素子製造方法 Ceased WO2009031206A1 (ja)

Priority Applications (6)

Application Number Priority Date Filing Date Title
JP2009531045A JP5128604B2 (ja) 2007-09-04 2007-09-04 半導体レーザ素子および半導体レーザ素子製造方法
EP07806686.7A EP2187488B1 (en) 2007-09-04 2007-09-04 Semiconductor laser element, and semiconductor laser element manufacturing method
CN2007801005049A CN101796699B (zh) 2007-09-04 2007-09-04 半导体激光元件以及半导体激光元件制造方法
PCT/JP2007/067231 WO2009031206A1 (ja) 2007-09-04 2007-09-04 半導体レーザ素子および半導体レーザ素子製造方法
US12/716,315 US8842707B2 (en) 2007-09-04 2010-03-03 Semiconductor laser element and method of manufacturing semiconductor laser element
US14/460,090 US9478944B2 (en) 2007-09-04 2014-08-14 Semiconductor laser element and method of manufacturing semiconductor laser element

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PCT/JP2007/067231 WO2009031206A1 (ja) 2007-09-04 2007-09-04 半導体レーザ素子および半導体レーザ素子製造方法

Related Child Applications (1)

Application Number Title Priority Date Filing Date
US12/716,315 Continuation US8842707B2 (en) 2007-09-04 2010-03-03 Semiconductor laser element and method of manufacturing semiconductor laser element

Publications (1)

Publication Number Publication Date
WO2009031206A1 true WO2009031206A1 (ja) 2009-03-12

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PCT/JP2007/067231 Ceased WO2009031206A1 (ja) 2007-09-04 2007-09-04 半導体レーザ素子および半導体レーザ素子製造方法

Country Status (5)

Country Link
US (2) US8842707B2 (ja)
EP (1) EP2187488B1 (ja)
JP (1) JP5128604B2 (ja)
CN (1) CN101796699B (ja)
WO (1) WO2009031206A1 (ja)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2011135803A1 (en) * 2010-04-26 2011-11-03 Furukawa Electric Co., Ltd. Semiconductor laser element and method of manufacturing the same
WO2014126164A1 (ja) * 2013-02-13 2014-08-21 古河電気工業株式会社 半導体光素子、半導体レーザ素子、及びその製造方法、並びに半導体レーザモジュール及び半導体素子の製造方法
EP2453535A4 (en) * 2009-07-06 2018-04-04 Furukawa Electric Co., Ltd. Method for manufacturing semiconductor optical device, method for manufacturing semiconductor optical laser element, and semiconductor optical device
US10033154B2 (en) 2010-03-03 2018-07-24 Furukawa Electronic Co., Ltd. Semiconductor optical element, semiconductor laser element, and method for manufacturing semiconductor optical element and semiconductor laser element, and method for manufacturing semiconductor laser module and semiconductor element

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101796699B (zh) * 2007-09-04 2012-12-26 古河电气工业株式会社 半导体激光元件以及半导体激光元件制造方法
JP5520986B2 (ja) * 2012-03-06 2014-06-11 古河電気工業株式会社 半導体レーザ素子の製造方法
JP6160141B2 (ja) * 2012-03-22 2017-07-12 日亜化学工業株式会社 半導体レーザ装置
CN106575854B (zh) * 2014-08-12 2019-08-27 古河电气工业株式会社 半导体元件
JP7182344B2 (ja) * 2018-03-13 2022-12-02 株式会社フジクラ 半導体光素子、半導体光素子形成用構造体及びこれを用いた半導体光素子の製造方法
US20220013989A1 (en) * 2018-11-15 2022-01-13 Sony Semiconductor Solutions Corporation Semiconductor laser and electronic apparatus

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Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP2453535A4 (en) * 2009-07-06 2018-04-04 Furukawa Electric Co., Ltd. Method for manufacturing semiconductor optical device, method for manufacturing semiconductor optical laser element, and semiconductor optical device
US10033154B2 (en) 2010-03-03 2018-07-24 Furukawa Electronic Co., Ltd. Semiconductor optical element, semiconductor laser element, and method for manufacturing semiconductor optical element and semiconductor laser element, and method for manufacturing semiconductor laser module and semiconductor element
WO2011135803A1 (en) * 2010-04-26 2011-11-03 Furukawa Electric Co., Ltd. Semiconductor laser element and method of manufacturing the same
JP2011233644A (ja) * 2010-04-26 2011-11-17 Furukawa Electric Co Ltd:The 半導体レーザ素子および半導体レーザ素子の製造方法
US8660160B2 (en) 2010-04-26 2014-02-25 Furukawa Electric Co., Ltd. Semiconductor laser element and method of manufacturing the same
WO2014126164A1 (ja) * 2013-02-13 2014-08-21 古河電気工業株式会社 半導体光素子、半導体レーザ素子、及びその製造方法、並びに半導体レーザモジュール及び半導体素子の製造方法
JP5731084B2 (ja) * 2013-02-13 2015-06-10 古河電気工業株式会社 半導体光素子、半導体レーザ素子、及びその製造方法、並びに半導体レーザモジュール及び半導体素子の製造方法
US10069280B2 (en) 2013-02-13 2018-09-04 Furukawa Electric Co., Ltd. Semiconductor optical element, semiconductor laser element, and method for manufacturing semiconductor optical element and semiconductor laser element, and method for manufacturing semiconductor laser module and semiconductor element

Also Published As

Publication number Publication date
CN101796699A (zh) 2010-08-04
CN101796699B (zh) 2012-12-26
US8842707B2 (en) 2014-09-23
EP2187488A4 (en) 2014-07-09
US9478944B2 (en) 2016-10-25
US20100195685A1 (en) 2010-08-05
EP2187488B1 (en) 2017-08-16
JPWO2009031206A1 (ja) 2010-12-09
US20160276804A1 (en) 2016-09-22
JP5128604B2 (ja) 2013-01-23
EP2187488A1 (en) 2010-05-19

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