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WO2009078296A1 - 磁気センサ - Google Patents

磁気センサ Download PDF

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Publication number
WO2009078296A1
WO2009078296A1 PCT/JP2008/072235 JP2008072235W WO2009078296A1 WO 2009078296 A1 WO2009078296 A1 WO 2009078296A1 JP 2008072235 W JP2008072235 W JP 2008072235W WO 2009078296 A1 WO2009078296 A1 WO 2009078296A1
Authority
WO
WIPO (PCT)
Prior art keywords
layer
resistance
cpp
curve
temperature coefficient
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/JP2008/072235
Other languages
English (en)
French (fr)
Inventor
Yosuke Ide
Masamichi Saito
Yoshihiro Nishiyama
Hidekazu Kobayashi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Alps Alpine Co Ltd
Original Assignee
Alps Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Alps Electric Co Ltd filed Critical Alps Electric Co Ltd
Priority to JP2009546221A priority Critical patent/JP5021764B2/ja
Publication of WO2009078296A1 publication Critical patent/WO2009078296A1/ja
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R33/00—Arrangements or instruments for measuring magnetic variables
    • G01R33/02—Measuring direction or magnitude of magnetic fields or magnetic flux
    • G01R33/06—Measuring direction or magnitude of magnetic fields or magnetic flux using galvano-magnetic devices
    • G01R33/09—Magnetoresistive devices
    • G01R33/093—Magnetoresistive devices using multilayer structures, e.g. giant magnetoresistance sensors
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y25/00—Nanomagnetism, e.g. magnetoimpedance, anisotropic magnetoresistance, giant magnetoresistance or tunneling magnetoresistance
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N50/00—Galvanomagnetic devices
    • H10N50/10—Magnetoresistive devices

Landscapes

  • Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Nanotechnology (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Hall/Mr Elements (AREA)
  • Measuring Magnetic Variables (AREA)

Abstract

【課題】　特に、磁気抵抗効果素子を備える素子部の抵抗温度係数（ＴＣＲ）（絶対値）をＲ－Ｈ曲線上における全抵抗範囲に対して従来よりも簡単且つ適切に小さくできる磁気センサを提供することを目的とする。 【解決手段】　素子部１は、反強磁性層、磁化方向が固定される固定磁性層、非磁性導電層及び磁化方向が外部磁界により変動するフリー磁性層を順に積層して成るＣＰＰ－ＧＭＲ素子２２と、Ｒ－Ｈ曲線上での最小抵抗値Ｒｍｉｎに対する抵抗温度係数及びＲ－Ｈ曲線上での最大抵抗値Ｒｍａｘに対する抵抗温度係数が前記ＣＰＰ－ＧＭＲ素子２２と異符号であり、前記反強磁性層、前記固定磁性層、絶縁障壁層、及び前記フリー磁性層を順に積層して成るトンネル型磁気抵抗効果素子２１を備え、前記ＣＰＰ－ＧＭＲ素子２２及び前記ＴＭＲ素子２１は直列接続されている。
PCT/JP2008/072235 2007-12-14 2008-12-08 磁気センサ Ceased WO2009078296A1 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2009546221A JP5021764B2 (ja) 2007-12-14 2008-12-08 磁気センサ

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2007323078 2007-12-14
JP2007-323078 2007-12-14

Publications (1)

Publication Number Publication Date
WO2009078296A1 true WO2009078296A1 (ja) 2009-06-25

Family

ID=40795412

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2008/072235 Ceased WO2009078296A1 (ja) 2007-12-14 2008-12-08 磁気センサ

Country Status (2)

Country Link
JP (1) JP5021764B2 (ja)
WO (1) WO2009078296A1 (ja)

Cited By (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2011047928A (ja) * 2009-07-28 2011-03-10 Tdk Corp 磁気センサ
JP2014016161A (ja) * 2012-07-05 2014-01-30 Tdk Corp 磁気センサ
JP2015075362A (ja) * 2013-10-07 2015-04-20 大同特殊鋼株式会社 単位素子対及び薄膜磁気センサ
WO2015062174A1 (zh) * 2013-11-01 2015-05-07 中国科学院物理研究所 一种用于温度传感器的纳米磁性多层膜及其制造方法
JP2017133889A (ja) * 2016-01-26 2017-08-03 株式会社東芝 磁気センサおよび磁気センサ装置
WO2017141869A1 (ja) 2016-02-16 2017-08-24 愛知製鋼株式会社 作業車両システム及び磁気マーカの作業方法
CN108574039A (zh) * 2017-03-13 2018-09-25 Tdk株式会社 磁传感器
JP2019056685A (ja) * 2017-09-21 2019-04-11 Tdk株式会社 磁気センサ
US10416000B2 (en) 2016-10-03 2019-09-17 Tdk Corporation Position detection device having magnetoresistive element
CN110462814A (zh) * 2018-03-08 2019-11-15 Tdk株式会社 自旋元件及磁存储器
US10632892B2 (en) 2016-02-10 2020-04-28 Aichi Steel Corporation Magnetic marker, magnetic marker retaining method, work apparatus for magnetic markers, and magnetic marker installation method
US10801170B2 (en) 2016-06-17 2020-10-13 Aichi Steel Corporation Magnetic marker and marker system
JP2021532361A (ja) * 2018-07-27 2021-11-25 アレグロ・マイクロシステムズ・エルエルシー Ｇｍｒ素子の上または下に配置されたｔｍｒ素子を有する磁気抵抗アセンブリ

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002071775A (ja) * 2000-08-31 2002-03-12 Yamaha Corp 磁気センサ
JP2003215222A (ja) * 2002-01-23 2003-07-30 Denso Corp 磁気抵抗効果素子センサ
JP2004117367A (ja) * 2003-10-10 2004-04-15 Yamaha Corp 磁気センサ及び同磁気センサの製造方法
JP2007194322A (ja) * 2006-01-18 2007-08-02 Alps Electric Co Ltd 車載用ｇｍｒ角度センサ

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH11112054A (ja) * 1997-10-01 1999-04-23 Fujitsu Ltd 磁気センサー及びこの磁気センサーを使用した装置
JP4807897B2 (ja) * 1999-01-04 2011-11-02 ヤマハ株式会社 磁気抵抗素子及び磁気抵抗素子の製造方法

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002071775A (ja) * 2000-08-31 2002-03-12 Yamaha Corp 磁気センサ
JP2003215222A (ja) * 2002-01-23 2003-07-30 Denso Corp 磁気抵抗効果素子センサ
JP2004117367A (ja) * 2003-10-10 2004-04-15 Yamaha Corp 磁気センサ及び同磁気センサの製造方法
JP2007194322A (ja) * 2006-01-18 2007-08-02 Alps Electric Co Ltd 車載用ｇｍｒ角度センサ

Cited By (23)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2011047928A (ja) * 2009-07-28 2011-03-10 Tdk Corp 磁気センサ
JP2014016161A (ja) * 2012-07-05 2014-01-30 Tdk Corp 磁気センサ
JP2015075362A (ja) * 2013-10-07 2015-04-20 大同特殊鋼株式会社 単位素子対及び薄膜磁気センサ
WO2015062174A1 (zh) * 2013-11-01 2015-05-07 中国科学院物理研究所 一种用于温度传感器的纳米磁性多层膜及其制造方法
US9484527B2 (en) 2013-11-01 2016-11-01 Institute Of Physics, Chinese Academy Of Sciences Nanometer magnetic multilayer film for temperature sensor and manufacturing method therefor
JP2017133889A (ja) * 2016-01-26 2017-08-03 株式会社東芝 磁気センサおよび磁気センサ装置
US10632892B2 (en) 2016-02-10 2020-04-28 Aichi Steel Corporation Magnetic marker, magnetic marker retaining method, work apparatus for magnetic markers, and magnetic marker installation method
US11220201B2 (en) 2016-02-10 2022-01-11 Aichi Steel Corporation Magnetic marker, magnetic marker retaining method, work apparatus for magnetic markers, and magnetic marker installation method
EP3715531A1 (en) 2016-02-10 2020-09-30 Aichi Steel Corporation Magnetic marker installing method and work vehicle system
WO2017141869A1 (ja) 2016-02-16 2017-08-24 愛知製鋼株式会社 作業車両システム及び磁気マーカの作業方法
US10801170B2 (en) 2016-06-17 2020-10-13 Aichi Steel Corporation Magnetic marker and marker system
US11060253B2 (en) 2016-06-17 2021-07-13 Aichi Steel Corporation Magnetic marker and marker system
US10416000B2 (en) 2016-10-03 2019-09-17 Tdk Corporation Position detection device having magnetoresistive element
US10895474B2 (en) 2016-10-03 2021-01-19 Tdk Corporation Magnetoresistive element and method of manufacturing such, and position detection device
DE102017114715B4 (de) 2016-10-03 2024-02-22 Tdk Corporation Magnetoresistives Element und Herstellungsverfahren dafür, und Positionserfassungsvorrichtung
US10418546B2 (en) 2017-03-13 2019-09-17 Tdk Corporation Magnetic sensor
JP2018152452A (ja) * 2017-03-13 2018-09-27 Tdk株式会社 磁気センサ
CN108574039A (zh) * 2017-03-13 2018-09-25 Tdk株式会社 磁传感器
CN108574039B (zh) * 2017-03-13 2022-02-11 Tdk株式会社 磁传感器
JP2019056685A (ja) * 2017-09-21 2019-04-11 Tdk株式会社 磁気センサ
CN110462814A (zh) * 2018-03-08 2019-11-15 Tdk株式会社 自旋元件及磁存储器
JP2021532361A (ja) * 2018-07-27 2021-11-25 アレグロ・マイクロシステムズ・エルエルシー Ｇｍｒ素子の上または下に配置されたｔｍｒ素子を有する磁気抵抗アセンブリ
JP7366118B2 (ja) 2018-07-27 2023-10-20 アレグロ・マイクロシステムズ・エルエルシー Ｇｍｒ素子の上または下に配置されたｔｍｒ素子を有する磁気抵抗アセンブリ

Also Published As

Publication number Publication date
JP5021764B2 (ja) 2012-09-12
JPWO2009078296A1 (ja) 2011-04-28

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